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Kolesnikov, A. V., Lipperheide, R., Wille, U. (2001) Tight-binding study of interface states in semiconductor heterojunctions. Physical Review B, 63 (20) doi:10.1103/physrevb.63.205322

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Reference TypeJournal (article/letter/editorial)
TitleTight-binding study of interface states in semiconductor heterojunctions
JournalPhysical Review B
AuthorsKolesnikov, A. V.Author
Lipperheide, R.Author
Wille, U.Author
Year2001 (May 3)Volume63
Issue20
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.63.205322Search in ResearchGate
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Mindat Ref. ID14156725Long-form Identifiermindat:1:5:14156725:1
GUID0
Full ReferenceKolesnikov, A. V., Lipperheide, R., Wille, U. (2001) Tight-binding study of interface states in semiconductor heterojunctions. Physical Review B, 63 (20) doi:10.1103/physrevb.63.205322
Plain TextKolesnikov, A. V., Lipperheide, R., Wille, U. (2001) Tight-binding study of interface states in semiconductor heterojunctions. Physical Review B, 63 (20) doi:10.1103/physrevb.63.205322
In(2001, May) Physical Review B Vol. 63 (20) American Physical Society (APS)

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Lipperheide, R., Wille, U. (2003) Unified description of ballistic and diffusive carrier transport in semiconductor structures. Physical Review B, 68 (11) doi:10.1103/physrevb.68.115315
Lipperheide, R., Wille, U. (2005) Spin-polarized electron transport in ferromagnet/semiconductor heterostructures: Unification of ballistic and diffusive transport. Physical Review B, 72 (16) doi:10.1103/physrevb.72.165322
Kolesnikov, A. V, Lipperheide, R, Silin, A. P, Wille, U (1998) Interface states in junctions of two semiconductors with intersecting dispersion curves. Europhysics Letters (EPL), 43. 331-336 doi:10.1209/epl/i1998-00361-2
Pick, Štěpán, Dreyssé, Hugues (2001) Oxygen-driven magnetization reorientation in Fe(001) bilayer: A tight-binding study. Physical Review B, 63 (20) doi:10.1103/physrevb.63.205427
Lipperheide, R., Wille, U. (2005) Publisher's Note: Spin-polarized electron transport in ferromagnet/semiconductor heterostructures: Unification of ballistic and diffusive transport [Phys. Rev. B72, 165322 (2005)]. Physical Review B, 72 (16) doi:10.1103/physrevb.72.169902
Agassi, D., Korenman, V. (1988) Interface states in band-inverted semiconductor heterojunctions. Physical Review B, 37 (17) 10095-10106 doi:10.1103/physrevb.37.10095
Zawadzki, Mary T., Luo, Weiwei, Clancy, Paulette (2001) Tight-binding molecular dynamics study of vacancy-interstitial annihilation in silicon. Physical Review B, 63 (20) doi:10.1103/physrevb.63.205205
Popescu, Voicu, Zunger, Alex (2011) Localized interface states in coherent isovalent semiconductor heterojunctions. Physical Review B, 84 (12) doi:10.1103/physrevb.84.125315
Suris, R. A., Lavallard, P. (1994) Calculated defect states in semiconductor superlattices within a tight-binding model. Physical Review B, 50 (12) 8875-8877 doi:10.1103/physrevb.50.8875
Kantser, V. G., Malkova, N. M. (1997) Interface states in stressed semiconductor heterojunctions with antiferromagnetic ordering. Physical Review B, 56 (4) 2004-2011 doi:10.1103/physrevb.56.2004
Pedersen, Thomas Garm, Pedersen, Kjeld, Brun Kriestensen, Thomas (2001) Optical matrix elements in tight-binding calculations. Physical Review B, 63 (20) doi:10.1103/physrevb.63.201101
 
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