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Breese, M. B. H., Champeaux, F. J. T., Teo, E. J., Bettiol, A. A., Blackwood, D. J. (2006) Hole transport through proton-irradiatedp-type silicon wafers during electrochemical anodization. Physical Review B, 73 (3) doi:10.1103/physrevb.73.035428

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Reference TypeJournal (article/letter/editorial)
TitleHole transport through proton-irradiatedp-type silicon wafers during electrochemical anodization
JournalPhysical Review B
AuthorsBreese, M. B. H.Author
Champeaux, F. J. T.Author
Teo, E. J.Author
Bettiol, A. A.Author
Blackwood, D. J.Author
Year2006 (January 24)Volume73
Issue3
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.73.035428Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14184561Long-form Identifiermindat:1:5:14184561:8
GUID0
Full ReferenceBreese, M. B. H., Champeaux, F. J. T., Teo, E. J., Bettiol, A. A., Blackwood, D. J. (2006) Hole transport through proton-irradiatedp-type silicon wafers during electrochemical anodization. Physical Review B, 73 (3) doi:10.1103/physrevb.73.035428
Plain TextBreese, M. B. H., Champeaux, F. J. T., Teo, E. J., Bettiol, A. A., Blackwood, D. J. (2006) Hole transport through proton-irradiatedp-type silicon wafers during electrochemical anodization. Physical Review B, 73 (3) doi:10.1103/physrevb.73.035428
In(2006, January) Physical Review B Vol. 73 (3) American Physical Society (APS)

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Teo, E. J., Breese, M. B. H., Bettiol, A. A., Mangaiyarkarasi, D., Champeaux, F., Watt, F., Blackwood, D. J. (2006) Multicolor Photoluminescence from Porous Silicon Using Focused, High-Energy Helium Ions. Advanced Materials, 18. 51-55 doi:10.1002/adma.200501138
Teo, E. J., Breese, M. B. H., Bettiol, A. A., Mangaiyarkarasi, D., Champeaux, F., Watt, F., Blackwood, D. J. (2006) Inside Front Cover: Multicolor Photoluminescence from Porous Silicon Using Focused, High-Energy Helium Ions (Adv. Mater. 1/2006). Advanced Materials, 18. doi:10.1002/adma.200690005
Teo, E. J., Mangaiyarkarasi, D., Breese, M. B. H., Bettiol, A. A., Blackwood, D. J. (2004) Controlled intensity emission from patterned porous silicon using focused proton beam irradiation. Applied Physics Letters, 85 (19). 4370pp. doi:10.1063/1.1815058
Mangaiyarkarasi, D., Teo, E. J., Breese, M. B. H., Bettiol, A. A., Blackwood, D. J. (2005) Controlled Shift in Emission Wavelength from Patterned Porous Silicon Using Focused Ion Beam Irradiation. Journal of the Electrochemical Society, 152. doi:10.1149/1.2032347
Teo, E. J., Breese, M. B. H., Tavernier, E. P., Bettiol, A. A., Watt, F., Liu, M. H., Blackwood, D. J. (2004) Three-dimensional microfabrication in bulk silicon using high-energy protons. Applied Physics Letters, 84 (16). 3202-3204 doi:10.1063/1.1723703
Yang, P. Y., Mashanovich, G. Z., Gomez-Morilla, I., Headley, W. R., Reed, G. T., Teo, E. J., Blackwood, D. J., Breese, M. B. H., Bettiol, A. A. (2007) Freestanding waveguides in silicon. Applied Physics Letters, 90 (24). 241109pp. doi:10.1063/1.2749175
Breese, M.B.H., Teo, E.J., Mangaiyarkarasi, D., Champeaux, F., Bettiol, A.A., Blackwood, D. (2005) Proton beam writing of microstructures in silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 231 (1). 357-363 doi:10.1016/j.nimb.2005.01.083
Liu, D. Q., Dang, Z. Y., Breese, M. B. H., Blackwood, D. J. (2014) Influence of Light Ion Irradiation on the Current-Voltage Characteristics of Electrochemical Anodization of p-Type Silicon. Journal of the Electrochemical Society, 161. doi:10.1149/2.055405jes
Breese, M. B. H., Rana, M. A., Osipowicz, T., Teo, E. J. (2004) Enhanced Planar Channeling of MeV Protons through Thin Crystals. Physical Review Letters, 93 (10). doi:10.1103/physrevlett.93.105505
Breese, M. B. H., Teo, E. J., Rana, M. A., Huang, L., van Kan, J. A., Watt, F., King, P. J. C. (2004) Observation of Many Coherent Oscillations for MeV Protons Transmitted through Stacking Faults. Physical Review Letters, 92 (4). doi:10.1103/physrevlett.92.045503
Cheng, L. J., Lori, J. (1970) Electrical Properties of Gamma-Irradiatedp-Type Silicon. Physical Review B, 1 (4) 1558-1563 doi:10.1103/physrevb.1.1558
 
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