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Beyer, V., von Borany, J. (2008) Elemental redistribution and Ge loss during ion-beam synthesis of Ge nanocrystals inSiO2films. Physical Review B, 77 (1) doi:10.1103/physrevb.77.014107

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Reference TypeJournal (article/letter/editorial)
TitleElemental redistribution and Ge loss during ion-beam synthesis of Ge nanocrystals inSiO2films
JournalPhysical Review B
AuthorsBeyer, V.Author
von Borany, J.Author
Year2008 (January 23)Volume77
Issue1
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.77.014107Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14194080Long-form Identifiermindat:1:5:14194080:1
GUID0
Full ReferenceBeyer, V., von Borany, J. (2008) Elemental redistribution and Ge loss during ion-beam synthesis of Ge nanocrystals inSiO2films. Physical Review B, 77 (1) doi:10.1103/physrevb.77.014107
Plain TextBeyer, V., von Borany, J. (2008) Elemental redistribution and Ge loss during ion-beam synthesis of Ge nanocrystals inSiO2films. Physical Review B, 77 (1) doi:10.1103/physrevb.77.014107
In(2008, January) Physical Review B Vol. 77 (1) American Physical Society (APS)

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Beyer, V., Eichhorn, F., von Borany, J., Mücklich, A., Müller, T. (2008) Ion beam synthesis and charge storage behavior of Au nanocrystals in thin SiO2 layers. Journal of Applied Physics, 104 (2). 24512pp. doi:10.1063/1.2957076
Zhou, Shengqiang, Potzger, K., von Borany, J., Grötzschel, R., Skorupa, W., Helm, M., Fassbender, J. (2008) Crystallographically oriented Co and Ni nanocrystals inside ZnO formed by ion implantation and postannealing. Physical Review B, 77 (3) doi:10.1103/physrevb.77.035209
Beyer, V., von Borany, J., Klimenkov, M., Müller, T. (2009) Current-voltage characteristics of metal-oxide-semiconductor devices containing Ge or Si nanocrystals in thin gate oxides. Journal of Applied Physics, 106 (6). 64505pp. doi:10.1063/1.3190520
Beyer, V., von Borany, J., Klimenkov, M. (2006) Determination and evolution of tunneling distances in Ge nanocrystal based memories. Applied Physics Letters, 89 (19). 193505pp. doi:10.1063/1.2387900
Beyer, V., von Borany, J., Klimenkov, M. (2007) A transient electrical model of charging for Ge nanocrystal containing gate oxides. Journal of Applied Physics, 101 (9). 94507pp. doi:10.1063/1.2723864
Lyubin, V., Klebanov, M., Dror, R., Sfez, B. (2008) Transient photorefraction in Ge-Pb-S glassy films. Physical Review B, 77 (3) doi:10.1103/physrevb.77.035320
Nord, J., Nordlund, K., Keinonen, J. (2002) Amorphization mechanism and defect structures in ion-beam-amorphized Si, Ge, and GaAs. Physical Review B, 65 (16) doi:10.1103/physrevb.65.165329
Melnikov, Dmitriy V., Chelikowsky, James R. (2004) Electron affinities and ionization energies in Si and Ge nanocrystals. Physical Review B, 69 (11) doi:10.1103/physrevb.69.113305
Beck, M. J., Pantelides, S. T. (2009) Origin of preferential sputtering ina-SiO2during ion beam synthesis of nanocrystals. Physical Review B, 79 (3) doi:10.1103/physrevb.79.033203
Vanpoucke, Danny E. P., Brocks, Geert (2008) Formation of Pt-induced Ge atomic nanowires on Pt/Ge(001): A density functional theory study. Physical Review B, 77 (24) doi:10.1103/physrevb.77.241308
Beyer, R., Borany, J. (2012) Determination of size and density of embedded Ge nanocrystals in SiO2 by scanning force microscopy using a tomographic approach. Surface and Interface Analysis, 44 (8). 1018-1021 doi:10.1002/sia.5007
 
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