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Beck, M. J., Pantelides, S. T. (2009) Origin of preferential sputtering ina-SiO2during ion beam synthesis of nanocrystals. Physical Review B, 79 (3) doi:10.1103/physrevb.79.033203

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Reference TypeJournal (article/letter/editorial)
TitleOrigin of preferential sputtering ina-SiO2during ion beam synthesis of nanocrystals
JournalPhysical Review B
AuthorsBeck, M. J.Author
Pantelides, S. T.Author
Year2009 (January 21)Volume79
Issue3
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.79.033203Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14202297Long-form Identifiermindat:1:5:14202297:1
GUID0
Full ReferenceBeck, M. J., Pantelides, S. T. (2009) Origin of preferential sputtering ina-SiO2during ion beam synthesis of nanocrystals. Physical Review B, 79 (3) doi:10.1103/physrevb.79.033203
Plain TextBeck, M. J., Pantelides, S. T. (2009) Origin of preferential sputtering ina-SiO2during ion beam synthesis of nanocrystals. Physical Review B, 79 (3) doi:10.1103/physrevb.79.033203
In(2009, January) Physical Review B Vol. 79 (3) American Physical Society (APS)

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