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Ganster, P., Tréglia, G., Saúl, A. (2009) Strain effect on self-diffusion in silicon: Numerical study. Physical Review B, 79 (11) doi:10.1103/physrevb.79.115205

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Reference TypeJournal (article/letter/editorial)
TitleStrain effect on self-diffusion in silicon: Numerical study
JournalPhysical Review B
AuthorsGanster, P.Author
Tréglia, G.Author
Saúl, A.Author
Year2009 (March 11)Volume79
Issue11
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.79.115205Search in ResearchGate
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Mindat Ref. ID14200364Long-form Identifiermindat:1:5:14200364:2
GUID0
Full ReferenceGanster, P., Tréglia, G., Saúl, A. (2009) Strain effect on self-diffusion in silicon: Numerical study. Physical Review B, 79 (11) doi:10.1103/physrevb.79.115205
Plain TextGanster, P., Tréglia, G., Saúl, A. (2009) Strain effect on self-diffusion in silicon: Numerical study. Physical Review B, 79 (11) doi:10.1103/physrevb.79.115205
In(2009, March) Physical Review B Vol. 79 (11) American Physical Society (APS)

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