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Rauls, E. (2006) Anisotropic effect of biaxial strain on phosphorus diffusion in silicon. Physical Review B, 74 (7) doi:10.1103/physrevb.74.075204

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Reference TypeJournal (article/letter/editorial)
TitleAnisotropic effect of biaxial strain on phosphorus diffusion in silicon
JournalPhysical Review B
AuthorsRauls, E.Author
Year2006 (August 15)Volume74
Issue7
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.74.075204Search in ResearchGate
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Mindat Ref. ID14187830Long-form Identifiermindat:1:5:14187830:2
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Full ReferenceRauls, E. (2006) Anisotropic effect of biaxial strain on phosphorus diffusion in silicon. Physical Review B, 74 (7) doi:10.1103/physrevb.74.075204
Plain TextRauls, E. (2006) Anisotropic effect of biaxial strain on phosphorus diffusion in silicon. Physical Review B, 74 (7) doi:10.1103/physrevb.74.075204
In(2006, August) Physical Review B Vol. 74 (7) American Physical Society (APS)

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Rauls, E., Pinheiro, M. V. B., Greulich-Weber, S., Gerstmann, U. (2004) Reassignment of phosphorus-related donors in SiC. Physical Review B, 70 (8) doi:10.1103/physrevb.70.085202
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Harrison, Scott A., Edgar, Thomas F., Hwang, Gyeong S. (2006) Prediction of the anomalous fluorine-silicon interstitial pair diffusion in crystalline silicon. Physical Review B, 74 (12) doi:10.1103/physrevb.74.121201
Zirkelbach, F., Stritzker, B., Nordlund, K., Lindner, J. K. N., Schmidt, W. G., Rauls, E. (2011) Combinedab initioand classical potential simulation study on silicon carbide precipitation in silicon. Physical Review B, 84 (6) doi:10.1103/physrevb.84.064126
Bondi, Robert J., Lee, Sangheon, Hwang, Gyeong S. (2009) Biaxial strain effects on the structure and stability of self-interstitial clusters in silicon. Physical Review B, 79 (10) doi:10.1103/physrevb.79.104106
Takagaki, Y., Ploog, K. H. (2006) Transport properties in anisotropic cross junctions by tight-binding calculations. Physical Review B, 74 (7) doi:10.1103/physrevb.74.075325
 
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