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Soykal, Ö. O., Dev, Pratibha, Economou, Sophia E. (2016) Silicon vacancy center in4H-SiC: Electronic structure and spin-photon interfaces. Physical Review B, 93 (8) doi:10.1103/physrevb.93.081207

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Reference TypeJournal (article/letter/editorial)
TitleSilicon vacancy center in4H-SiC: Electronic structure and spin-photon interfaces
JournalPhysical Review B
AuthorsSoykal, Ö. O.Author
Dev, PratibhaAuthor
Economou, Sophia E.Author
Year2016 (February 26)Volume93
Issue8
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.93.081207Search in ResearchGate
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Mindat Ref. ID14241921Long-form Identifiermindat:1:5:14241921:4
GUID0
Full ReferenceSoykal, Ö. O., Dev, Pratibha, Economou, Sophia E. (2016) Silicon vacancy center in4H-SiC: Electronic structure and spin-photon interfaces. Physical Review B, 93 (8) doi:10.1103/physrevb.93.081207
Plain TextSoykal, Ö. O., Dev, Pratibha, Economou, Sophia E. (2016) Silicon vacancy center in4H-SiC: Electronic structure and spin-photon interfaces. Physical Review B, 93 (8) doi:10.1103/physrevb.93.081207
In(2016, February) Physical Review B Vol. 93 (8) American Physical Society (APS)

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Carter, S. G., Soykal, Ö. O., Dev, Pratibha, Economou, Sophia E., Glaser, E. R. (2015) Spin coherence and echo modulation of the silicon vacancy in4H−SiCat room temperature. Physical Review B, 92 (16) doi:10.1103/physrevb.92.161202
Soykal, Ö. O., Reinecke, T. L. (2017) Quantum metrology with a single spin- 32 defect in silicon carbide. Physical Review B, 95 (8) doi:10.1103/physrevb.95.081405
Dong, Wenzheng, Doherty, M. W., Economou, Sophia E. (2019) Spin polarization through intersystem crossing in the silicon vacancy of silicon carbide. Physical Review B, 99 (18) doi:10.1103/physrevb.99.184102
Soykal, Ö. O., Flatté, M. E. (2010) Size dependence of strong coupling between nanomagnets and photonic cavities. Physical Review B, 82 (10) doi:10.1103/physrevb.82.104413
Soykal, Ö. O., Tahan, Charles (2013) Toward engineered quantum many-body phonon systems. Physical Review B, 88 (13) doi:10.1103/physrevb.88.134511
Mizuochi, N., Yamasaki, S., Takizawa, H., Morishita, N., Ohshima, T., Itoh, H., Umeda, T., Isoya, J. (2005) Spin multiplicity and charge state of a silicon vacancy(TV2a)in4H-SiC determined by pulsed ENDOR. Physical Review B, 72 (23) doi:10.1103/physrevb.72.235208
Steeds, J. W. (2009) Photoluminescence study of the carbon antisite-vacancy pair in4H- and6H-SiC. Physical Review B, 80 (24) doi:10.1103/physrevb.80.245202
Simon, James, Calderon-Vargas, F. A., Barnes, Edwin, Economou, Sophia E. (2020) Fast noise-resistant control of donor nuclear spin qubits in silicon. Physical Review B, 101 (20) doi:10.1103/physrevb.101.205307
Filipović, Milena, Belzig, Wolfgang (2016) Photon-assisted electronic and spin transport in a junction containing precessing molecular spin. Physical Review B, 93 (7) doi:10.1103/physrevb.93.075402
Callaway, Joseph (1971) Electronic Structure of the Single Vacancy in Silicon. Physical Review B, 3 (8) 2556-2563 doi:10.1103/physrevb.3.2556
Hornos, T., Son, N. T., Janzén, E., Gali, A. (2007) Theoretical study of small silicon clusters in4H−SiC. Physical Review B, 76 (16) doi:10.1103/physrevb.76.165209
 
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