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Salvan, F., Humbert, A., Dumas, P., Thibaudau, F. (1988) Scanning tunneling microscopy (S.T.M.) of semiconductor surfaces and metal-semiconductor interfaces. Annales de Physique, 13 (3) 133-151 doi:10.1051/anphys:01988001303013300

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Reference TypeJournal (article/letter/editorial)
TitleScanning tunneling microscopy (S.T.M.) of semiconductor surfaces and metal-semiconductor interfaces
JournalAnnales de Physique
AuthorsSalvan, F.Author
Humbert, A.Author
Dumas, P.Author
Thibaudau, F.Author
Year1988Volume13
Issue3
PublisherEDP Sciences
DOIdoi:10.1051/anphys:01988001303013300Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14271796Long-form Identifiermindat:1:5:14271796:9
GUID0
Full ReferenceSalvan, F., Humbert, A., Dumas, P., Thibaudau, F. (1988) Scanning tunneling microscopy (S.T.M.) of semiconductor surfaces and metal-semiconductor interfaces. Annales de Physique, 13 (3) 133-151 doi:10.1051/anphys:01988001303013300
Plain TextSalvan, F., Humbert, A., Dumas, P., Thibaudau, F. (1988) Scanning tunneling microscopy (S.T.M.) of semiconductor surfaces and metal-semiconductor interfaces. Annales de Physique, 13 (3) 133-151 doi:10.1051/anphys:01988001303013300
In(1958) Annales de Physique Vol. 13 (3) EDP Sciences

See Also

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Thibaudau, F., Dumas, Ph., Mathiez, Ph., Humbert, A., Satti, D., Salvan, F. (1989) √3 structure of Boron enriched Si(111) surfaces investigated by Auger, leed and scanning tunneling microscopy. Surface Science Letters, 211. doi:10.1016/0167-2584(89)90313-7
Thibaudau, F., Dumas, Ph., Mathiez, Ph., Humbert, A., Satti, D., Salvan, F. (1989) Structure of boron enriched Si(111) surfaces investigated by Auger, LEED and scanning tunneling microscopy. Surface Science, 211. 148-155 doi:10.1016/0039-6028(89)90765-6
Dumas, Ph, Humbert, A, Mathieu, G, Mathiez, P, Mouttet, C, Rolland, R, Salvan, F, Thibaudau, F, Tosch, S (1988) Structure of the Au/Si(111) surface by scanning tunneling microscopy. Physica Scripta, 38 (2). 244-245 doi:10.1088/0031-8949/38/2/026
Dumas, Ph., Thibaudau, F., Salvan, F. (1988) Scanning tunnelling microscopy of B/Si(111) √3×√3 R(30°). Journal of Microscopy, 152 (3). 751-759 doi:10.1111/j.1365-2818.1988.tb01446.x
Salvan, F., Thibaudau, F., Dumas, Ph. (1990) STM studies of metal-semiconductor interface formation. Applied Surface Science, 41. 88-96 doi:10.1016/0169-4332(89)90038-x
Humbert, A., Salvan, F., Mouttet, C. (1987) A lamellar III–VI semiconductor compound (GaSe) investigated by scanning tunneling microscopy. Surface Science, 181 (1). 307-312 doi:10.1016/0039-6028(87)90171-3
Humbert, A., Salvan, F., Mouttet, C. (1987) A lamellar III-VI semiconductor compound (GaSe) investigated by scanning tunneling microscopy. Surface Science Letters, 181 (1). doi:10.1016/0167-2584(87)90738-9
ALLONGUE, P. (1994) In-situ scanning tunneling microscopy of the semiconductor-electrolyte interface. Le Journal de Physique IV, 4. doi:10.1051/jp4:1994125
Baratoff, A., Binnig, G., Fuchs, H., Salvan, F., Stoll, E. (1986) Tunneling microscopy and spectroscopy of semiconductor surfaces and interfaces. Surface Science Letters, 168 (1). doi:10.1016/0167-2584(86)90495-0
Voisin, P. (1997) Wannier-Stark Effects in Semiconductor Superlattices. Annales de Physique, 22 (6) 681-705 doi:10.1051/anphys:199706001
Baratoff, A., Binnig, G., Fuchs, H., Salvan, F., Stoll, E. (1986) Tunneling microscopy and spectroscopy of semiconductor surfaces and interfaces. Surface Science, 168 (1). 734-743 doi:10.1016/0039-6028(86)90905-2
 
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