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Salvan, F., Thibaudau, F., Dumas, Ph. (1990) STM studies of metal-semiconductor interface formation. Applied Surface Science, 41. 88-96 doi:10.1016/0169-4332(89)90038-x

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Reference TypeJournal (article/letter/editorial)
TitleSTM studies of metal-semiconductor interface formation
JournalApplied Surface Science
AuthorsSalvan, F.Author
Thibaudau, F.Author
Dumas, Ph.Author
Year1990 (January)Volume41
PublisherElsevier BV
DOIdoi:10.1016/0169-4332(89)90038-xSearch in ResearchGate
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Mindat Ref. ID9894908Long-form Identifiermindat:1:5:9894908:3
GUID0
Full ReferenceSalvan, F., Thibaudau, F., Dumas, Ph. (1990) STM studies of metal-semiconductor interface formation. Applied Surface Science, 41. 88-96 doi:10.1016/0169-4332(89)90038-x
Plain TextSalvan, F., Thibaudau, F., Dumas, Ph. (1990) STM studies of metal-semiconductor interface formation. Applied Surface Science, 41. 88-96 doi:10.1016/0169-4332(89)90038-x
In(n.d.) Applied Surface Science Vol. 41. Elsevier BV

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Flores, F., Muñoz, A., Durán, J.C. (1990) Semiconductor interface formation: The role of the induced density of interface states. Applied Surface Science, 41. 144-150 doi:10.1016/0169-4332(89)90047-0
Mathiez, Ph., Roge, T.P., Dumas, Ph., Salvan, F. (1992) Early stages of Cu growth on BSi(111)√3 × √3 R30°. Applied Surface Science, 56. 551-557 doi:10.1016/0169-4332(92)90287-8
Soukiassian, P., Starnberg, H.I., Kendelewicz, T. (1990) Insulator-semiconductor interface formation by electronic promotion using alkali metal and removal of the catalyst. Applied Surface Science, 41. 395-401 doi:10.1016/0169-4332(89)90090-1
Mönch, Winfried (1990) Mechanisms of barrier formation in schottky contacts: Metal-induced surface and interface states. Applied Surface Science, 41. 128-138 doi:10.1016/0169-4332(89)90045-7
Thibaudau, F., Dumas, Ph., Mathiez, Ph., Humbert, A., Satti, D., Salvan, F. (1989) √3 structure of Boron enriched Si(111) surfaces investigated by Auger, leed and scanning tunneling microscopy. Surface Science Letters, 211. doi:10.1016/0167-2584(89)90313-7
Thibaudau, F., Dumas, Ph., Mathiez, Ph., Humbert, A., Satti, D., Salvan, F. (1989) Structure of boron enriched Si(111) surfaces investigated by Auger, LEED and scanning tunneling microscopy. Surface Science, 211. 148-155 doi:10.1016/0039-6028(89)90765-6
Fujimura, Norifumi, Ito, Taichiro (1990) TiSi2 formation at the Ti-rich TiNx/Si interface. Applied Surface Science, 41. 272-276 doi:10.1016/0169-4332(89)90069-x
Williams, R.Stanley, Daley, Richard S., Huang, Judy H., Charatan, Robert M. (1990) Initial stages of metal/semiconductor interface formation: Au and Ag on Si(111). Applied Surface Science, 41. 70-74 doi:10.1016/0169-4332(89)90035-4
Salvan, F., Humbert, A., Dumas, P., Thibaudau, F. (1988) Scanning tunneling microscopy (S.T.M.) of semiconductor surfaces and metal-semiconductor interfaces. Annales de Physique, 13 (3) 133-151 doi:10.1051/anphys:01988001303013300
Hiraki, Akio (1990) Preface. Applied Surface Science, 41. doi:10.1016/0169-4332(89)90024-x
Vlieg, E., van der Veen, J.F. (1990) X-ray scattering studies of semiconductor interfaces: Atomic structure and morphology. Applied Surface Science, 41. 62-69 doi:10.1016/0169-4332(89)90034-2
 
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