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HINZE, J. W., BAKER, J. A., PATTERSON, J. W. (1974) ChemInform Abstract: INTERFACE STABILITY IN THE ELECTROLYTIC DECOMPOSITION OF SILICON DIOXIDE FILMS AT ELEVATED TEMPERATURES. Chemischer Informationsdienst, 5 (51) doi:10.1002/chin.197451019

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Reference TypeJournal (article/letter/editorial)
TitleChemInform Abstract: INTERFACE STABILITY IN THE ELECTROLYTIC DECOMPOSITION OF SILICON DIOXIDE FILMS AT ELEVATED TEMPERATURES
JournalChemischer Informationsdienst
AuthorsHINZE, J. W.Author
BAKER, J. A.Author
PATTERSON, J. W.Author
Year1974 (December 24)Volume5
Issue51
PublisherWiley
DOIdoi:10.1002/chin.197451019Search in ResearchGate
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Mindat Ref. ID14702903Long-form Identifiermindat:1:5:14702903:6
GUID0
Full ReferenceHINZE, J. W., BAKER, J. A., PATTERSON, J. W. (1974) ChemInform Abstract: INTERFACE STABILITY IN THE ELECTROLYTIC DECOMPOSITION OF SILICON DIOXIDE FILMS AT ELEVATED TEMPERATURES. Chemischer Informationsdienst, 5 (51) doi:10.1002/chin.197451019
Plain TextHINZE, J. W., BAKER, J. A., PATTERSON, J. W. (1974) ChemInform Abstract: INTERFACE STABILITY IN THE ELECTROLYTIC DECOMPOSITION OF SILICON DIOXIDE FILMS AT ELEVATED TEMPERATURES. Chemischer Informationsdienst, 5 (51) doi:10.1002/chin.197451019
In(1974, December) Chemischer Informationsdienst Vol. 5 (51) Wiley

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Hinze, J. W., Baker, J. A., Patterson, J. W. (1974) Interface Stability in the Electrolytic Decomposition of Silicon Dioxide Films at Elevated Temperatures. Journal of the Electrochemical Society, 121. 1328pp. doi:10.1149/1.2401680
MILLS, T. G., KROGER, F. A. (1974) ChemInform Abstract: ELECTRICAL CONDUCTION AT ELEVATED TEMPERATURES IN THERMALLY GROWN SILICON DIOXIDE FILMS. Chemischer Informationsdienst, 5 (5) doi:10.1002/chin.197405020
HINZE, J. W., PATTERSON, J. W. (1973) ChemInform Abstract: ELEKTROLYTISCHES VERH. VON CAF2-KRISTALLEN UNTER REDUZIERENDEN BEDINGUNGEN. Chemischer Informationsdienst, 4 (12) doi:10.1002/chin.197312030
CLARK, J. B., PISTORIUS, CARL W. F. T. (1974) ChemInform Abstract: POLYMORPHIC BEHAVIOUR OF AGBF4 AND AGCLO4 AT ELEVATED PRESSURES AND TEMPERATURES. Chemischer Informationsdienst, 5 (38) doi:10.1002/chin.197438005
CULLEN, G. W., CORBOY, J. F. (1974) ChemInform Abstract: A COMPARISON OF THE SEMICONDUCTING PROPERTIES OF THIN FILMS OF SILICON ON SAPPHIRE AND SPINEL. Chemischer Informationsdienst, 5 (51) doi:10.1002/chin.197451020
COLBY, J. W., KATZ, L. E. (1976) ChemInform Abstract: BORON SEGREGATION AT SILICON-SILICON DIOXIDE INTERFACE AS A FUNCTION OF TEMPERATURE AND ORIENTATION. Chemischer Informationsdienst, 7 (25) doi:10.1002/chin.197625007
BLOEM, J., GILING, L. J., GRAEF, M. W. M. (1974) ChemInform Abstract: THE INCORPORATION OF PHOSPHORUS IN SILICON EPITAXIAL LAYER GROWTH. Chemischer Informationsdienst, 5 (51) doi:10.1002/chin.197451004
TENNANT, G., VEVERS, R. J. S. (1974) ChemInform Abstract: DIAZOALKYLIDENEAMINE-1,2,3-TRIAZOLE TAUTOMERISM IN 1,2,3-TRIAZOLO(1,5-A)-PYRIMIDINES AT ELEVATED TEMPERATURES. Chemischer Informationsdienst, 5 (48) doi:10.1002/chin.197448371
PERRAM, J. W., HUNTER, R. J., WRIGHT, H. J. L. (1974) ChemInform Abstract: THE OXIDE-SOLUTION INTERFACE. Chemischer Informationsdienst, 5 (24) doi:10.1002/chin.197424030
STERTEN, A. (1974) ChemInform Abstract: NONSTOICHIOMETRY AND DIFFUSIVITIES IN IRON MONOSULPHIDE AT ELEVATED TEMPERATURES. Chemischer Informationsdienst, 5 (34) doi:10.1002/chin.197434036
JACOBSON, N. S., WORRELL, W. L. (1984) ChemInform Abstract: REACTION OF COBALT IN SULFUR DIOXIDE ATMOSPHERES AT ELEVATED TEMPERATURES. Chemischer Informationsdienst, 15 (35) doi:10.1002/chin.198435030
 
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