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JASTRZEBSKI, L., SMELTZER, R. K., CULLEN, G. W., LAGOWSKI, J. (1984) ChemInform Abstract: EFFECT OF HEAT-TREATMENT ON ELECTRICAL PROPERTIES OF ION-IMPLANTED SILICON ON SAPPHIRE. Chemischer Informationsdienst, 15 (38) doi:10.1002/chin.198438012

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Reference TypeJournal (article/letter/editorial)
TitleChemInform Abstract: EFFECT OF HEAT-TREATMENT ON ELECTRICAL PROPERTIES OF ION-IMPLANTED SILICON ON SAPPHIRE
JournalChemischer Informationsdienst
AuthorsJASTRZEBSKI, L.Author
SMELTZER, R. K.Author
CULLEN, G. W.Author
LAGOWSKI, J.Author
Year1984 (September 18)Volume15
Issue38
PublisherWiley
DOIdoi:10.1002/chin.198438012Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14893424Long-form Identifiermindat:1:5:14893424:7
GUID0
Full ReferenceJASTRZEBSKI, L., SMELTZER, R. K., CULLEN, G. W., LAGOWSKI, J. (1984) ChemInform Abstract: EFFECT OF HEAT-TREATMENT ON ELECTRICAL PROPERTIES OF ION-IMPLANTED SILICON ON SAPPHIRE. Chemischer Informationsdienst, 15 (38) doi:10.1002/chin.198438012
Plain TextJASTRZEBSKI, L., SMELTZER, R. K., CULLEN, G. W., LAGOWSKI, J. (1984) ChemInform Abstract: EFFECT OF HEAT-TREATMENT ON ELECTRICAL PROPERTIES OF ION-IMPLANTED SILICON ON SAPPHIRE. Chemischer Informationsdienst, 15 (38) doi:10.1002/chin.198438012
In(1984, September) Chemischer Informationsdienst Vol. 15 (38) Wiley

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Jastrzebski, L. (1984) Effect of Heat-Treatment on Electrical Properties of Ion-Implanted Silicon on Sapphire. Journal of the Electrochemical Society, 131. 1375pp. doi:10.1149/1.2115850
LAGOWSKI, J., JASTRZEBSKI, L., DUFFY, M. T., MAGEE, C., CULLEN, G. W. (1984) ChemInform Abstract: THE CHARACTERIZATION OF HETEROEPITAXIAL SILICON BY SURFACE PHOTOVOLTAGE TECHNIQUE. IMPROVED PROPERTIES IN SOS FILMS RESULTING FROM IMPLANT DAMAGE AND SOLID-STATE REGROWTH. Chemischer Informationsdienst, 15 (28) doi:10.1002/chin.198428017
Jastrzebski, L., Lagowski, J., Cullen, G. W., Pankove, J. I. (1982) Hydrogenation induced improvement in electronic properties of heteroepitaxial silicon‐on‐sapphire. Applied Physics Letters, 40 (8). 713-716 doi:10.1063/1.93201
CULLEN, G. W., CORBOY, J. F. (1974) ChemInform Abstract: A COMPARISON OF THE SEMICONDUCTING PROPERTIES OF THIN FILMS OF SILICON ON SAPPHIRE AND SPINEL. Chemischer Informationsdienst, 5 (51) doi:10.1002/chin.197451020
BHATTACHARYA, P. K., RHEE, J. K. (1984) ChemInform Abstract: SOME PROPERTIES OF SEMI-INSULATING AND SILICON-IMPLANTED GALLIUM ARSENIDE. Chemischer Informationsdienst, 15 (35) doi:10.1002/chin.198435009
COSWAY, R. G. (1986) ChemInform Abstract: Effect of Oxidation Ambient on the Electrical Properties of Thin Silicon Oxide. Chemischer Informationsdienst, 17 (16) doi:10.1002/chin.198616012
VAN DER LINDEN, J. H., SCHOONMAN, J., NOLTE, R. J. M., DRENTH, W. (1984) ChemInform Abstract: ELECTRICAL PROPERTIES OF A MOLECULAR ION CHANNEL. Chemischer Informationsdienst, 15 (52) doi:10.1002/chin.198452051
JASTRZEBSKI, L., LAGOWSKI, J., GATOS, H. C. (1979) ChemInform Abstract: QUANTITATIVE DETERMINATION OF THE CARRIER CONCENTRATION DISTRIBUTION IN SEMICONDUCTORS BY SCANNING IR ABSORPTION: SILICON. Chemischer Informationsdienst, 10 (21) doi:10.1002/chin.197921008
ATASOY, OE. A. (1984) ChemInform Abstract: EFFECT OF ALLOYING ELEMENTS AND HEAT TREATMENT ON THE STRUCTURE AND PROPERTIES OF HADFIELD′S AUSTENITIC MANGANESE STEEL. Chemischer Informationsdienst, 15 (37) doi:10.1002/chin.198437008
Jastrzebski, L., Duffy, M.T., Corboy, J.F., Cullen, G.W., Lagowski, J. (1982) Relationship between crystallinity and electronic properties of silicon-on-sapphire. Journal of Crystal Growth, 58 (1). 37-43 doi:10.1016/0022-0248(82)90207-x
DESMAISON, J. G., SMELTZER, W. W. (1977) ChemInform Abstract: NITROGEN DIFFUSION IN ZIRCONIUM NITRIDE. Chemischer Informationsdienst, 8 (15) doi:10.1002/chin.197715005
 
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