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Moriizumi, Toyosaka, Takahashi, Kiyoshi (1969) Si- and Ge-Doped GaAsp-nJunctions. Japanese Journal of Applied Physics, 8 (3) 348-357 doi:10.1143/jjap.8.348

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Reference TypeJournal (article/letter/editorial)
TitleSi- and Ge-Doped GaAsp-nJunctions
JournalJapanese Journal of Applied Physics
AuthorsMoriizumi, ToyosakaAuthor
Takahashi, KiyoshiAuthor
Year1969 (March)Volume8
Issue3
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.8.348Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14977564Long-form Identifiermindat:1:5:14977564:1
GUID0
Full ReferenceMoriizumi, Toyosaka, Takahashi, Kiyoshi (1969) Si- and Ge-Doped GaAsp-nJunctions. Japanese Journal of Applied Physics, 8 (3) 348-357 doi:10.1143/jjap.8.348
Plain TextMoriizumi, Toyosaka, Takahashi, Kiyoshi (1969) Si- and Ge-Doped GaAsp-nJunctions. Japanese Journal of Applied Physics, 8 (3) 348-357 doi:10.1143/jjap.8.348
In(1969, March) Japanese Journal of Applied Physics Vol. 8 (3) Japan Society of Applied Physics

See Also

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Moriizumi, Toyosaka, Takahashi, Kiyoshi (1970) Epitaxial Vapor Growth of ZnTe on InAs. Japanese Journal of Applied Physics, 9 (7) 849-850 doi:10.1143/jjap.9.849
Ota, Tadahisa, Moriizumi, Toyosaka, Takahashi, Kiyoshi (1971) Memory Effects in ZnTe-InAs Heterojunctions. Japanese Journal of Applied Physics, 10 (11) 1652-1653 doi:10.1143/jjap.10.1652
Tamura, Teiji, Moriizumi, Toyosaka, Takahashi, Kiyoshi (1972) ZnTe-InAs Heterojunctions Prepared by Liquid-Phase Epitaxy. Japanese Journal of Applied Physics, 11 (7) 1024-1031 doi:10.1143/jjap.11.1024
Tamura, Teiji, Moriizumi, Toyosaka, Takahashi, Kiyoshi (1971) Preparation of ZnTe-InAs Heterojunctions by Liquid-Phase Epitaxy. Japanese Journal of Applied Physics, 10 (6) 813-814 doi:10.1143/jjap.10.813
Takahashi, Kiyoshi, Morizumi, Toyosaka (1966) Growth of InAs Whiskers in Wurtzite Structure. Japanese Journal of Applied Physics, 5 (8) 657-662 doi:10.1143/jjap.5.657
Kudo, Kazuhiro, Moriizumi, Toyosaka (1980) Photovoltaic Effects of Merocyanine-ZnO Cells. Japanese Journal of Applied Physics, 19 (11) doi:10.1143/jjap.19.l683
Kudo, Kazuhiro, Yamashina, Masakazu, Moriizumi, Toyosaka (1984) Field Effect Measurement of Organic Dye Films. Japanese Journal of Applied Physics, 23. 130 doi:10.1143/jjap.23.130
Shimoide, Kouji, Qingde, Zhuang, Moriizumi, Toyosaka (1986) Artificial Membrane System Prepared by Semiconductor Technology. Japanese Journal of Applied Physics, 25. doi:10.1143/jjap.25.l569
Kudo, Kazuhiro, Moriizumi, Toyosaka (1981) Photoelectric p-n Junction Cells Using Organic Dyes. Japanese Journal of Applied Physics, 20 (7) doi:10.1143/jjap.20.l553
Ito, Kentaro, Takahashi, Kiyoshi (1968) Epitaxial Growth of Ge Layers on Si Substrates by Vacuum Evaporation. Japanese Journal of Applied Physics, 7 (8) 821-826 doi:10.1143/jjap.7.821
Onoue, Yoichi, Moriizumi, Toyosaka, Okahata, Yoshio, Ariga, Katsuhiko (1987) High-Quality LB Films of Artificial Dialkyl Lipid. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l1897
 
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