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Moriizumi, Toyosaka, Takahashi, Kiyoshi (1970) Epitaxial Vapor Growth of ZnTe on InAs. Japanese Journal of Applied Physics, 9 (7) 849-850 doi:10.1143/jjap.9.849

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Reference TypeJournal (article/letter/editorial)
TitleEpitaxial Vapor Growth of ZnTe on InAs
JournalJapanese Journal of Applied Physics
AuthorsMoriizumi, ToyosakaAuthor
Takahashi, KiyoshiAuthor
Year1970 (July)Volume9
Issue7
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.9.849Search in ResearchGate
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Mindat Ref. ID14978050Long-form Identifiermindat:1:5:14978050:8
GUID0
Full ReferenceMoriizumi, Toyosaka, Takahashi, Kiyoshi (1970) Epitaxial Vapor Growth of ZnTe on InAs. Japanese Journal of Applied Physics, 9 (7) 849-850 doi:10.1143/jjap.9.849
Plain TextMoriizumi, Toyosaka, Takahashi, Kiyoshi (1970) Epitaxial Vapor Growth of ZnTe on InAs. Japanese Journal of Applied Physics, 9 (7) 849-850 doi:10.1143/jjap.9.849
In(1970, July) Japanese Journal of Applied Physics Vol. 9 (7) Japan Society of Applied Physics

See Also

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Tamura, Teiji, Moriizumi, Toyosaka, Takahashi, Kiyoshi (1972) ZnTe-InAs Heterojunctions Prepared by Liquid-Phase Epitaxy. Japanese Journal of Applied Physics, 11 (7) 1024-1031 doi:10.1143/jjap.11.1024
Ota, Tadahisa, Moriizumi, Toyosaka, Takahashi, Kiyoshi (1971) Memory Effects in ZnTe-InAs Heterojunctions. Japanese Journal of Applied Physics, 10 (11) 1652-1653 doi:10.1143/jjap.10.1652
Tamura, Teiji, Moriizumi, Toyosaka, Takahashi, Kiyoshi (1971) Preparation of ZnTe-InAs Heterojunctions by Liquid-Phase Epitaxy. Japanese Journal of Applied Physics, 10 (6) 813-814 doi:10.1143/jjap.10.813
Moriizumi, Toyosaka, Takahashi, Kiyoshi (1969) Si- and Ge-Doped GaAsp-nJunctions. Japanese Journal of Applied Physics, 8 (3) 348-357 doi:10.1143/jjap.8.348
Takahashi, Kiyoshi, Morizumi, Toyosaka (1966) Growth of InAs Whiskers in Wurtzite Structure. Japanese Journal of Applied Physics, 5 (8) 657-662 doi:10.1143/jjap.5.657
Kudo, Kazuhiro, Moriizumi, Toyosaka (1981) Photoelectric p-n Junction Cells Using Organic Dyes. Japanese Journal of Applied Physics, 20 (7) doi:10.1143/jjap.20.l553
Tsujimoto, Yoshinobu, Fukai, Masakazu (1967) Epitaxial Growth of ZnTe on ZnSe by Vapor Transport. Japanese Journal of Applied Physics, 6 (8) 1013 doi:10.1143/jjap.6.1013
Ito, Kentaro, Takahashi, Kiyoshi (1968) Epitaxial Growth of Ge Layers on Si Substrates by Vacuum Evaporation. Japanese Journal of Applied Physics, 7 (8) 821-826 doi:10.1143/jjap.7.821
Kudo, Kazuhiro, Moriizumi, Toyosaka (1980) Photovoltaic Effects of Merocyanine-ZnO Cells. Japanese Journal of Applied Physics, 19 (11) doi:10.1143/jjap.19.l683
Ido, Toshiyuki, Ōshima, Shunzō, Saji, Manabu (1968) Preparation of ZnTe Epitaxial Films on CdS by Vapor Transport Method. Japanese Journal of Applied Physics, 7 (9) 1141-1142 doi:10.1143/jjap.7.1141
Muranoi, Tetsuo, Sekine, Masami (1996) Vapor Phase Epitaxial Growth of ZnTe Films Using Metallic Sources. Japanese Journal of Applied Physics, 35. doi:10.1143/jjap.35.l374
 
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