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Yashiro, Takehisa (1970) Frequency and Temperature Dependence of C-V Characteristics at Ge-SiO2Interface and BT Treatments. Japanese Journal of Applied Physics, 9 (7) 740-747 doi:10.1143/jjap.9.740

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Reference TypeJournal (article/letter/editorial)
TitleFrequency and Temperature Dependence of C-V Characteristics at Ge-SiO2Interface and BT Treatments
JournalJapanese Journal of Applied Physics
AuthorsYashiro, TakehisaAuthor
Year1970 (July)Volume9
Issue7
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.9.740Search in ResearchGate
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Mindat Ref. ID14978027Long-form Identifiermindat:1:5:14978027:0
GUID0
Full ReferenceYashiro, Takehisa (1970) Frequency and Temperature Dependence of C-V Characteristics at Ge-SiO2Interface and BT Treatments. Japanese Journal of Applied Physics, 9 (7) 740-747 doi:10.1143/jjap.9.740
Plain TextYashiro, Takehisa (1970) Frequency and Temperature Dependence of C-V Characteristics at Ge-SiO2Interface and BT Treatments. Japanese Journal of Applied Physics, 9 (7) 740-747 doi:10.1143/jjap.9.740
In(1970, July) Japanese Journal of Applied Physics Vol. 9 (7) Japan Society of Applied Physics

See Also

These are possibly similar items as determined by title/reference text matching only.

Yashiro, Takehisa (1971) Determination of Trap Levels in Ge3N4and Barrier Energies at the Ge3N4-Ge Interface by C-V Characteristics. Japanese Journal of Applied Physics, 10 (12) 1691-1697 doi:10.1143/jjap.10.1691
Yoshino, Hideo, Kiuchi, Kazuhide, Yashiro, Takehisa (1977) Properties of MNMOS Structure Interposing Platinum at Si3N4–SiO2Interface. Japanese Journal of Applied Physics, 16 (5) 867-868 doi:10.1143/jjap.16.867
Kubo, Shuji, Ichinohe, Eisuke (1968) C-V Characteristics of Heat-Treated Si-SiO2Interface. Japanese Journal of Applied Physics, 7 (9) 1134 doi:10.1143/jjap.7.1134
Yoshino, Hideo, Kiuchi, Kazuhide, Yashiro, Takehisa (1977) Effect of Platinum Particles in Dual SiO2Interface on Charge Storage Properties. Japanese Journal of Applied Physics, 16 (3) 441-446 doi:10.1143/jjap.16.441
Sasaki, Nobuo (1973) Change of Si-SiO2Interface Charge by BT Treatment. Japanese Journal of Applied Physics, 12 (9) 1458-1459 doi:10.1143/jjap.12.1458
Imai, Kazuo, Yashiro, Takehisa (1976) Oxidized Porous Silicon-Silicon Interface Investigation by C-V Method. Japanese Journal of Applied Physics, 15 (3) 553-554 doi:10.1143/jjap.15.553
Nakagawa, Yasuo, Yoshinaga, Hiroshi (1970) Characteristics of High-Sensitivity Ge Bolometer. Japanese Journal of Applied Physics, 9 (4) 427 doi:10.1143/jjap.9.427b
Shiono, Noboru, Yashiro, Takehisa (1979) Surface State Formation during Long-Term Bias-Temperature Stress Aging of Thin SiO2–Si Interfaces. Japanese Journal of Applied Physics, 18 (6) 1087-1095 doi:10.1143/jjap.18.1087
Nakagawa, Yasuo, Yoshinaga, Hiroshi (1970) Characteristics of High-Sensitivity Ge Bolometer. Japanese Journal of Applied Physics, 9 (1) 125-131 doi:10.1143/jjap.9.125
Inoue, Kuon (1970) Temperature Dependence of Second Harmonic Generation in NaNO2. Japanese Journal of Applied Physics, 9 (1) 152 doi:10.1143/jjap.9.152
Okamura, Masahiro (1970) The Orientation Dependence of Boron Diffusion. Japanese Journal of Applied Physics, 9 (7) 848-849 doi:10.1143/jjap.9.848
 
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