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Okamura, Masahiro (1970) The Orientation Dependence of Boron Diffusion. Japanese Journal of Applied Physics, 9 (7) 848-849 doi:10.1143/jjap.9.848

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Reference TypeJournal (article/letter/editorial)
TitleThe Orientation Dependence of Boron Diffusion
JournalJapanese Journal of Applied Physics
AuthorsOkamura, MasahiroAuthor
Year1970 (July)Volume9
Issue7
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.9.848Search in ResearchGate
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Mindat Ref. ID14978049Long-form Identifiermindat:1:5:14978049:2
GUID0
Full ReferenceOkamura, Masahiro (1970) The Orientation Dependence of Boron Diffusion. Japanese Journal of Applied Physics, 9 (7) 848-849 doi:10.1143/jjap.9.848
Plain TextOkamura, Masahiro (1970) The Orientation Dependence of Boron Diffusion. Japanese Journal of Applied Physics, 9 (7) 848-849 doi:10.1143/jjap.9.848
In(1970, July) Japanese Journal of Applied Physics Vol. 9 (7) Japan Society of Applied Physics

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Okamura, Masahiro (1969) Boron Diffusion into Silicon Using Elemental Boron. Japanese Journal of Applied Physics, 8 (12) 1440-1448 doi:10.1143/jjap.8.1440
Okamura, Masahiro (1968) The Retarded Diffusion of Gallium in Silicon. I. Japanese Journal of Applied Physics, 7 (9) 1067-1073 doi:10.1143/jjap.7.1067
Okamura, Masahiro (1968) The Retarded Diffusion of Gallium in Silicon. II. Japanese Journal of Applied Physics, 7 (10) 1231-1236 doi:10.1143/jjap.7.1231
Okamura, Masahiro (1971) Gallium Diffusion in Silicon. Japanese Journal of Applied Physics, 10 (4) 434-440 doi:10.1143/jjap.10.434
Okamura, Masahiro, Ogawa, Takuzo (1965) The Retardation of Gallium Diffusion in Silicon. Japanese Journal of Applied Physics, 4 (10) 823-824 doi:10.1143/jjap.4.823
Moriizumi, Toyosaka, Takahashi, Kiyoshi (1970) Epitaxial Vapor Growth of ZnTe on InAs. Japanese Journal of Applied Physics, 9 (7) 849-850 doi:10.1143/jjap.9.849
Ito, Kazuyoshi, Ito, Takashi, Watanabe, Yoshiyuki, Oka, Masahiro (1981) Orientation Dependence of Divacancy Production and Annealing in Germanium. Japanese Journal of Applied Physics, 20 (2) 303-306 doi:10.1143/jjap.20.303
Kakehi, Masahiro, Shimokawa, Ryuichi, Arizumi, Tetsuya (1970) Epitaxial Vapor Growth of Gallium Antimonide. Japanese Journal of Applied Physics, 9 (9) 1039-1044 doi:10.1143/jjap.9.1039
Iwasaki, Hiroshi, Toyoda, Hiroo, Ohtsuka, Masahiro (1968) Temperature Dependence of Refractive Indexnαof Ferroelectric Glycine Sulfate. Japanese Journal of Applied Physics, 7 (7) 787 doi:10.1143/jjap.7.787
Takano, Yukio, Kohn, Kay, Kikuta, Seishi, Kohra, Kazutake (1970) X-Ray Studies of Dislocation Structures in a Sapphire Crystal. Japanese Journal of Applied Physics, 9 (7) 847-848 doi:10.1143/jjap.9.847
Inoue, Kuon (1970) Temperature Dependence of Second Harmonic Generation in NaNO2. Japanese Journal of Applied Physics, 9 (1) 152 doi:10.1143/jjap.9.152
 
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