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Av-Ron, M., Shatzkes, M., Distefano, T., Gdula, R. (1980) On Al–SiO2Interfaces and Oxidation Temperatures. Japanese Journal of Applied Physics, 19. 101 doi:10.7567/jjaps.19s1.101

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Reference TypeJournal (article/letter/editorial)
TitleOn Al–SiO2Interfaces and Oxidation Temperatures
JournalJapanese Journal of Applied Physics
AuthorsAv-Ron, M.Author
Shatzkes, M.Author
Distefano, T.Author
Gdula, R.Author
Year1980 (January 1)Volume19
PublisherJapan Society of Applied Physics
DOIdoi:10.7567/jjaps.19s1.101Search in ResearchGate
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Mindat Ref. ID14983408Long-form Identifiermindat:1:5:14983408:9
GUID0
Full ReferenceAv-Ron, M., Shatzkes, M., Distefano, T., Gdula, R. (1980) On Al–SiO2Interfaces and Oxidation Temperatures. Japanese Journal of Applied Physics, 19. 101 doi:10.7567/jjaps.19s1.101
Plain TextAv-Ron, M., Shatzkes, M., Distefano, T., Gdula, R. (1980) On Al–SiO2Interfaces and Oxidation Temperatures. Japanese Journal of Applied Physics, 19. 101 doi:10.7567/jjaps.19s1.101
In(1980) Japanese Journal of Applied Physics Vol. 19. Japan Society of Applied Physics

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Av‐Ron, M., Shatzkes, M., DiStefano, T. H., Gdula, R. A. (1981) Electron tunneling at Al‐SiO2interfaces. Journal of Applied Physics, 52 (4). 2897-2908 doi:10.1063/1.329024
Kasprzak, L. A., Gaind, A. K. (1980) Near Ideal Si–SiO2Interfaces. Japanese Journal of Applied Physics, 19. 99 doi:10.7567/jjaps.19s1.99
Av‐Ron, M., Shatzkes, M. (1972) Current‐voltage characteristics of Al–SiO2–Si structures. Applied Physics Letters, 21 (5). 233-235 doi:10.1063/1.1654358
Shatzkes, M., Av‐Ron, M., Anderson, R. M. (1974) On the nature of conduction and switching in SiO2. Journal of Applied Physics, 45 (5). 2065-2077 doi:10.1063/1.1663546
Sullivan, M. J., Reith, T. M., Av‐Ron, M., Shatzkes, M. (1978) Hole‐trapping effects in reverse‐biased Si‐doped Al Schottky‐barrier diodes. Journal of Applied Physics, 49 (6). 3574-3577 doi:10.1063/1.325218
Yamada, K., Lindström, M., Heleskivi, J., Galazka, R. R. (1980) Photoconduction in Cd1-xMnxTe. Japanese Journal of Applied Physics, 19. 361 doi:10.7567/jjaps.19s3.361
Poate, J. M. (1980) (Invited) Mechanisms of Laser Annealing. Japanese Journal of Applied Physics, 19. 115 doi:10.7567/jjaps.19s1.115
Haworth, L., Tomlinson, R. D., Al-Saffar, I. S. (1980) Growth and Characterization of CuInTe2Single Crystals. Japanese Journal of Applied Physics, 19. 77 doi:10.7567/jjaps.19s3.77
Distefano, T. H. (1974) Submonolayer Sodium Coverage of the Si–SiO2Interface. Japanese Journal of Applied Physics, 13. doi:10.7567/jjaps.2s2.a913b
Chang, R. P. H. (1980) Selective Plasma Oxidation of GaAs –A Study of the Interface Properties. Japanese Journal of Applied Physics, 19. 483 doi:10.7567/jjaps.19s1.483
(1980) Scope and Vision in the Solar Photovoltaic R & D. Japanese Journal of Applied Physics, 19. 217 doi:10.7567/jjaps.19s2.217
 
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