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(1980) Japanese Journal of Applied Physics Vol. 19. Japan Society of Applied Physics

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Reference TypeJournal (volume)
JournalJapanese Journal of Applied Physics
Year1980Volume<   19   >
PublisherJapan Society of Applied Physics
Mindat Ref. ID14983409Long-form Identifiermindat:1:5:14983409:6
GUID0
Full Reference(1980) Japanese Journal of Applied Physics Vol. 19. Japan Society of Applied Physics
Plain Text(1980) Japanese Journal of Applied Physics Vol. 19. Japan Society of Applied Physics
InJapan Society of Applied Physics - Japanese Journal of Applied Physics

Contains

Mitani, Kiyoshi, Nishino, Shigehiro, Matsunami, Hiroyuki, Tanaka, Tetsuro (1980) Deposition and Properties of Polycrystalline Si for Solar Cells. Japanese Journal of Applied Physics, 19. 1 doi:10.7567/jjaps.19s2.1
Aoki, Masaharu (1980) Opening Address. Japanese Journal of Applied Physics, 19. 1 doi:10.7567/jjaps.19s3.1
Nishizawa, Jun-ichi (1980) (Invited) Recent Progress and Potential of SIT. Japanese Journal of Applied Physics, 19. 3 doi:10.7567/jjaps.19s1.3
Schwab, C. (1980) Present Status on Ternary and Multinary Compounds. Japanese Journal of Applied Physics, 19. 3 doi:10.7567/jjaps.19s3.3
Romeo, N. (1980) Solar Cells Made by Chalcopyrite Materials. Japanese Journal of Applied Physics, 19. 5 doi:10.7567/jjaps.19s3.5
Saitoh, Tadashi, Warabisako, Terunori, Kuroda, Ekyo, Itoh, Haruo, Matsubara, Sunao, Tokuyama, Takashi (1980) Impurity Gettering of Diffused Solar Cells Fabricated from Metallurgical-Grade Silicon. Japanese Journal of Applied Physics, 19. 7 doi:10.7567/jjaps.19s2.7
Tsuya, Noboru, Arai, Ken Ichi, Takeuchi, Toshio, Ojima, Teruhiko, Kuroiwa, Akihiko (1980) Rapid Quenched Ribbon-Form Silicon. Japanese Journal of Applied Physics, 19. 13 doi:10.7567/jjaps.19s2.13
Yu, H. N. (1980) (Invited) MOS Devices Fabricated by Electron Beam Lithography. Japanese Journal of Applied Physics, 19. 13 doi:10.7567/jjaps.19s1.13
Samaan, A. N. Y., Abdul-Hussein, N. Abdul-Karim, Tomlinson, R. D., Hill, A. E., Armour, D. G. (1980) An Evaluation of Some Physical Characteristics of CuInSe2Thin Films Produced by R.F. Sputtering. Japanese Journal of Applied Physics, 19. 15 doi:10.7567/jjaps.19s3.15
Tarui, Yasuo (1980) (Invited) Basic Technology for VLSI. Japanese Journal of Applied Physics, 19. 15 doi:10.7567/jjaps.19s1.15
Matsuda, Masatoshi, Kuroda, Ekyo (1980) Problems in Growth of 4-Inch Wide Silicon Ribbon Crystals. Japanese Journal of Applied Physics, 19. 17 doi:10.7567/jjaps.19s2.17
Kimura, Kenjiro, Koyama, Shizuo, Watanabe, Hiroyuki (1980) Low Cost Production of Terrestrial Solar Arrays Utilizing EFG Silicon Ribbon Crystal. Japanese Journal of Applied Physics, 19. 21 doi:10.7567/jjaps.19s2.21
Hayashi, Izuo (1980) (Invited) Recent Progress in Semiconductor Laser Research and Development. Japanese Journal of Applied Physics, 19. 23 doi:10.7567/jjaps.19s1.23
Isomura, Shigehiro, Kaneko, Hideki, Tomioka, Shinji, Nakatani, Isao, Masumoto, Katashi (1980) Properties of CuInSe2Thin Film Semiconductors. Japanese Journal of Applied Physics, 19. 23 doi:10.7567/jjaps.19s3.23
Matsunami, Hiroyuki, Matsumoto, Shigenori, Tanaka, Tetsuro (1980) Fundamental Properties of MIS Solar Cells. Japanese Journal of Applied Physics, 19. 27 doi:10.7567/jjaps.19s2.27
González, J., Rincón, C., Redondo, A., Negrete, P. (1980) Photodetecting Properties of CuInSe2Homojunctions. Japanese Journal of Applied Physics, 19. 29 doi:10.7567/jjaps.19s3.29
Katsube, Teruaki, Umezaki, Shigeo, Ikomat, Toshiaki (1980) Improved Efficiency of Si MOS Solar Cell due to Surface States and Oxide Charges. Japanese Journal of Applied Physics, 19. 33 doi:10.7567/jjaps.19s2.33
Takenoshita, Hiroshi, Nakau, Tanehiro, Nakao, Itiro (1980) Preparation and Some Properties of CuInSe2on ZnSe Heterojunction Grown by LPE. Japanese Journal of Applied Physics, 19. 33 doi:10.7567/jjaps.19s3.33
Yamazaki, Shin-ichi, Hayasaka, Toa (1980) (Invited) X-Ray Lithography. Japanese Journal of Applied Physics, 19. 35 doi:10.7567/jjaps.19s1.35
Ito, Kentaro, Kojima, Kunio (1980) Solution-Grown Silicon Solar Cells. Japanese Journal of Applied Physics, 19. 37 doi:10.7567/jjaps.19s2.37
Daniel, P. J., Kramer, R. P. (1980) (Invited) Electron Image Projection. Japanese Journal of Applied Physics, 19. 41 doi:10.7567/jjaps.19s1.41
Usami, Akira, Ishihara, Shin-ichiro, Sugano, Masahide (1980) Development of High Efficiency Epitaxial Silicon Solar Cells. Japanese Journal of Applied Physics, 19. 43 doi:10.7567/jjaps.19s2.43
Hwang, Huey-Liang, Tseng, Bea-Hung, Sun, Cherng-Yuan (1980) Thermodynamic Considerations of Vapor Epitaxial Growth of CuInS2/GaP Heterojunctions. Japanese Journal of Applied Physics, 19. 43 doi:10.7567/jjaps.19s3.43
Asai, Takayuki, Ito, Shin-ichi, Eto, Toshio, Migitaka, Masatoshi (1980) 1: 4 Demagnifying Electron Projection System. Japanese Journal of Applied Physics, 19. 47 doi:10.7567/jjaps.19s1.47
Saito, Takeshi, Noguchi, Kesao, Kaneko, Sctsuo, Terasawa, Yoshizumi (1980) Silicon Epitaxial Solar Cells by Ion-Plating Deposition. Japanese Journal of Applied Physics, 19. 49 doi:10.7567/jjaps.19s2.49
Clark, A. H., Unertl, W. N. (1980) MBE Growth of CuInSe2on CdS: Initial Stages. Japanese Journal of Applied Physics, 19. 49 doi:10.7567/jjaps.19s3.49
Okazaki, Shinji, Mochiji, Kozo, Takeda, Eiji, Maruyama, Yoji (1980) Electron Beam Mask Fabrication for MOSLSI's with 1.5 µm Design Rule. Japanese Journal of Applied Physics, 19. 51 doi:10.7567/jjaps.19s1.51
Endo, Saburo, Irie, Taizo (1980) Preparation and Photovoltaic Properties of CdIn2S4/CuInSe2Heterojunctions. Japanese Journal of Applied Physics, 19. 53 doi:10.7567/jjaps.19s3.53
Itoh, Haruo, Tamura, Hiroshi, Miyao, Masanobu, Warabisako, Terunori, Itoh, Kazuo, Sasaki, Yoshitomo (1980) Silicon Solar Cells Fabricated by Ion Implantation and Laser Annealing. Japanese Journal of Applied Physics, 19. 55 doi:10.7567/jjaps.19s2.55
Shibayama, Hikou, Ogawa, Tetsuya, Kobayashi, Koichi, Hisatsugu, Tokushige (1980) Reactive Sputter Etching System with Floating Grid. Japanese Journal of Applied Physics, 19. 57 doi:10.7567/jjaps.19s1.57
Schwab, C. (1980) Defect Properties of Some 1362Chalcopyrite Compounds. Japanese Journal of Applied Physics, 19. 59 doi:10.7567/jjaps.19s3.59
Yagi, K., Tamura, M., Yanagi, Y., Inaniwa, K., Tokuyama, T. (1980) Low-frequency Low-noise Transistors Fabricated by Double Ion Implantation. Japanese Journal of Applied Physics, 19. 61 doi:10.7567/jjaps.19s1.61
Takakura, Hideyuki, Choe, Moon-Soek, Hamakawa, Yoshihiro (1980) Paint-on-diffusant SnO2/n+-p Si Heteroface Solar Cell. Japanese Journal of Applied Physics, 19. 61 doi:10.7567/jjaps.19s2.61
Ohno, Yasuo, Okuto, Yuji (1980) Computer Aided Si-MOSFET Process Designing. Japanese Journal of Applied Physics, 19. 65 doi:10.7567/jjaps.19s1.65
Nunoi, Tohru, Nishimura, Nobuo, Nammori, Takayuki, Sawai, Hiroyasu, Suzuki, Akio (1980) High Performance BSF Silicon Solar Cell with Fire Through Contacts Printed on AR Coating. Japanese Journal of Applied Physics, 19. 67 doi:10.7567/jjaps.19s2.67
Garbato, L., Ledda, F., Manca, P. (1980) Flux Growth and Characterization of Multinary Phases in the CuGaTe2-ZnTe System. Japanese Journal of Applied Physics, 19. 67 doi:10.7567/jjaps.19s3.67
Hoshi, Youichi, Naoe, Masahiko, Yamanaka, Shun-ichi (1980) Deposition of Silicon Nitride Films by High Rate Reactive Sputtering. Japanese Journal of Applied Physics, 19. 71 doi:10.7567/jjaps.19s1.71
Nagatomo, Takao, Katsuta, Shiro, Omoto, Osamu (1980) Life Tests of SnO2/n-Si and ITO/p-Si Solar Cells. Japanese Journal of Applied Physics, 19. 71 doi:10.7567/jjaps.19s2.71
Paorici, C., Romeo, N., Tarricone, L., Zanotti, L. (1980) Crystal Growth and Properties of Quinary Chalcopyrite Compounds. Japanese Journal of Applied Physics, 19. 71 doi:10.7567/jjaps.19s3.71
Nakata, Yukihiko, Shibuya, Noriaki, Kobe, Takashi, Okamoto, Koji, Suzuki, Akio, Tsuji, Takateru (1980) Performance of Circular Fresnel Lens Photovoltaic Concentrator. Japanese Journal of Applied Physics, 19. 75 doi:10.7567/jjaps.19s2.75
Moll, John L., Sun, Edward Y. (1980) (Invited) Physical Effects in Small Geometry MOS Transistors. Japanese Journal of Applied Physics, 19. 77 doi:10.7567/jjaps.19s1.77
Haworth, L., Tomlinson, R. D., Al-Saffar, I. S. (1980) Growth and Characterization of CuInTe2Single Crystals. Japanese Journal of Applied Physics, 19. 77 doi:10.7567/jjaps.19s3.77
Suzuki, Akio, Kitamura, Susumu (1980) Combined Photovoltaic and Thermal Hybrid Collector. Japanese Journal of Applied Physics, 19. 79 doi:10.7567/jjaps.19s2.79
Sun, Cherng-yuan, Hwang, Huey-liang, Leu, Chung-yieh, Liu, Lu-ming, Tseng, Bae-heng (1980) Vapor Growth of CuInS2Single Crystals and Its Thermodynamic Considerations. Japanese Journal of Applied Physics, 19. 81 doi:10.7567/jjaps.19s3.81
Kohyama, Susumu, Furuyama, Tohru, Mimurat, Shouichi, Iizuka, Hisakazu (1980) (Invited) Non-Thermal Carrier Generation in MOS Structures. Japanese Journal of Applied Physics, 19. 85 doi:10.7567/jjaps.19s1.85
Suzuki, Masakuni, Nakao, Akira, Maekawa, Toshikazu, Kumeda, Minoru, Shimizu, Tatsuo (1980) Doping Effects of Group-III and -V Element on a-Si Prepared by High Pressure rf Sputtering. Japanese Journal of Applied Physics, 19. 85 doi:10.7567/jjaps.19s2.85
Benoit, P., Charpin, P., Lesueur, R., Djega-Mariadassou, C. (1980) Crystal Structure of Chalcopyrite AgInSe2. Japanese Journal of Applied Physics, 19. 85 doi:10.7567/jjaps.19s3.85
Djega-Mariadassou, C., Rimsky, A., Lesueur, R., Albany, J. H. (1980) About Defined Compounds in the Cu–In–Se System. Japanese Journal of Applied Physics, 19. 89 doi:10.7567/jjaps.19s3.89
Suzuki, Tohru, Hirose, Masataka, Osaka, Yukio (1980) Hydrogen Implantation into CVD Amorphous Silicon. Japanese Journal of Applied Physics, 19. 91 doi:10.7567/jjaps.19s2.91
Matsunaga, Jun-ichi, Kohyama, Susumu, Konaka, Masami, Iizuka, Hisakazu (1980) Design Limitations due to Substrate Currents and Secondary Impact lonization Electrons in NMOS LSI's. Japanese Journal of Applied Physics, 19. 93 doi:10.7567/jjaps.19s1.93
Kim, Gi Il, Panyakeow, Somsak, Shirafuji, Junji, Inuishi, Yoshio (1980) Electron Transport in Hydrogenated Amorphous Silicon Prepared by rf Sputtering. Japanese Journal of Applied Physics, 19. 95 doi:10.7567/jjaps.19s2.95
Yamamoto, Nobuyuki (1980) Possibility of Blue Light Emitting Diode in CuAl1-xGaxS2/ZnS Heterojunction. Japanese Journal of Applied Physics, 19. 95 doi:10.7567/jjaps.19s3.95
Kasprzak, L. A., Gaind, A. K. (1980) Near Ideal Si–SiO2Interfaces. Japanese Journal of Applied Physics, 19. 99 doi:10.7567/jjaps.19s1.99
Imura, Takeshi, Kubota, Kazuyoshi, Ushita, Katsumi, Hiraki, Akio (1980) Characterization of Hydrogenated Amorphous Silicon: Some Behaviors of Hydrogen and Impurities Studied by Film Characterization Techniques. Japanese Journal of Applied Physics, 19. 99 doi:10.7567/jjaps.19s2.99
Sato, Katsuaki, Teranishi, Teruo (1980) Effect of Delocalization ofd-Electrons on the Optical Reflectivity Spectra of CuGa1-xFexS2and CuAl1-xFexS2Systems. Japanese Journal of Applied Physics, 19. 101 doi:10.7567/jjaps.19s3.101
Av-Ron, M., Shatzkes, M., Distefano, T., Gdula, R. (1980) On Al–SiO2Interfaces and Oxidation Temperatures. Japanese Journal of Applied Physics, 19. 101 doi:10.7567/jjaps.19s1.101
Ho, Vu Quoc, Sugano, Takuo (1980) Anodization of Silicon in RF Induced Oxygen Plasma. Japanese Journal of Applied Physics, 19. 103 doi:10.7567/jjaps.19s1.103
Konagai, Makoto, Miyamoto, Hiroshi, Takahashi, Kiyoshi (1980) Photovoltaic Properties of a Si–F–H and a·Si–H Prepared by DC Glow Discharge. Japanese Journal of Applied Physics, 19. 105 doi:10.7567/jjaps.19s2.105
Oguchi, Tamio, Hamajima, Toshiki, Kambara, Takeshi, Gondaira, Ken Ichiro (1980) Electronic Band Structures of I-III-VI2Compounds. Japanese Journal of Applied Physics, 19. 107 doi:10.7567/jjaps.19s3.107
Dang, Luong Mo, Iwai, Hiroshi, Nishi, Yoshio, Taguchi, Shinji (1980) P-Channel versus N-Channel in MOS-ICs of Submicron Channel Lengths. Japanese Journal of Applied Physics, 19. 107 doi:10.7567/jjaps.19s1.107
Matsumura, Hideki, Nakagome, Yoshinobu, Furukawa, Seijiro (1980) An Amorphous-Silicon Film Usable at High-Temperature –Annealing Properties of a New Fluorinated Amorphous-Silicon–. Japanese Journal of Applied Physics, 19. 111 doi:10.7567/jjaps.19s2.111
Horinaka, Hiromichi, Sonomura, Hajimu, Miyauchi, Takeshi (1980) Natural Optical Activity of AgGaSe2. Japanese Journal of Applied Physics, 19. 111 doi:10.7567/jjaps.19s3.111
Katayama, Yoshifumi, Shimada, Toshikazu, Usami, Katsuhisa, Ishioka, Sachio (1980) Control of Optical Gap in a-SixC1-x: H Alloy Films Produced by Reactive Sputtering Method. Japanese Journal of Applied Physics, 19. 115 doi:10.7567/jjaps.19s2.115
Poate, J. M. (1980) (Invited) Mechanisms of Laser Annealing. Japanese Journal of Applied Physics, 19. 115 doi:10.7567/jjaps.19s1.115
Joshi, N. V. (1980) Vibrational Properties of Off Diagonally Disordered CuInS2Crystal. Japanese Journal of Applied Physics, 19. 117 doi:10.7567/jjaps.19s3.117
Kumabe, Kenji, Matsumoto, Nobuo (1980) GaAs and GaP Amorphous-Film/Crystal Junctions. Japanese Journal of Applied Physics, 19. 119 doi:10.7567/jjaps.19s2.119
Gibbons, J. F. (1980) (Invited) Applications of Scanning CW Lasers and Electron Beams in Silicon Technology. Japanese Journal of Applied Physics, 19. 121 doi:10.7567/jjaps.19s1.121
Matsushita, Tatsuhiko, Suzuki, Akio, Okuda, Masahiro, Sakai, Takashi (1980) Photovoltaic Effect of Amorphous InxSe1-xFilm–SnO2Structure. Japanese Journal of Applied Physics, 19. 123 doi:10.7567/jjaps.19s2.123
Goodchild, Gerald, Woolley, John C., Gonzales, Jesus (1980) Temperature Variation of Energy Gap Values in CuGa(Se1-xSx)2. Japanese Journal of Applied Physics, 19. 123 doi:10.7567/jjaps.19s3.123
Murayama, Jin, Kawajiri, Kazuhiro, Mizobuchi, Yuzo, Nakajima, Yosuke (1980) Electron-Beam Deposited SnO2/a-Si(H) Photovoltaic Device. Japanese Journal of Applied Physics, 19. 127 doi:10.7567/jjaps.19s2.127
Bhar, Gopal C., Ghosh, G. C. (1980) Evaluation of ZnGeP2Crystal for Temperature Dependent Phase-matched Nonlinear Interactions. Japanese Journal of Applied Physics, 19. 129 doi:10.7567/jjaps.19s3.129
Miyao, Masanobu, Koyanagi, Mitsumasa, Tamura, Hiroshi, Hashimoto, Norikazu, Tokuyama, Takashi (1980) Short Channel MOS FET's Fabricated by Self-Aligned Ion Implantation and Laser Annealing. Japanese Journal of Applied Physics, 19. 129 doi:10.7567/jjaps.19s1.129
Okushi, Hideyo, Yamasaki, Satoshi, Nakagawa, Katsumi, Matsuda, Akihisa, Matsumura, Mitsuo, Tanaka, Kazunobu, Iizima, Sigeru (1980) A New Model for the Carrier Transport in Amorphous Si: H Schottky Barrier Diodes. Japanese Journal of Applied Physics, 19. 131 doi:10.7567/jjaps.19s2.131
Wasim, S. M., Marcano, G., Porras, G. S. (1980) Transport Properties of Ternary Compounds. Japanese Journal of Applied Physics, 19. 133 doi:10.7567/jjaps.19s3.133
Onga, Shinji, Kohyama, Susumu, Shibata, Kenji, Nagakubo, Yoshihide, Iizuka, Hisakazu (1980) Resistivity Reduction of Polycrystalline Silicon Film by Laser Annealing. Japanese Journal of Applied Physics, 19. 133 doi:10.7567/jjaps.19s1.133
Kuwano, Yukinori, Imai, Terutoyo, Ohnishi, Michitoshi, Nakano, Syoichi, Fukatsu, Takeo (1980) Amorphous Si Photovoltaic Cells and Cell Module (Integrated Cell Module) Japanese Journal of Applied Physics, 19. 137 doi:10.7567/jjaps.19s2.137
Nakashima, Yuichi, Kawamata, Toshinori, Shirakawa, Tsuguru, Nakai, Junkichi (1980) Observation of Landau Levels and Two-Dimensional Energy Bands in CdSnAs2by Electron Tunneling. Japanese Journal of Applied Physics, 19. 139 doi:10.7567/jjaps.19s3.139
Badawi, M. H., Sealy, B. J., Stephens, K. G., Akintunde, J. A. (1980) Improvement in Electrical Properties of Laser Annealed Ion Implanted GaAs. Japanese Journal of Applied Physics, 19. 139 doi:10.7567/jjaps.19s1.139
Nitta, Yoshiteru, Okamoto, Hiroaki, Fujita, Nobuhiko, Hamakawa, Yoshihiro (1980) Amorphous Si: H Heteroface Photovoltaic Cells Based Upon p-i-n Junction Structure. Japanese Journal of Applied Physics, 19. 143 doi:10.7567/jjaps.19s2.143
Woolley, J. C., Goodchild, R. G., Hughes, O. H., Lopez-Rivera, S. A., Pamplin, B. R. (1980) Quaternary Defect Chalcopyrite Compounds I III IV VI4. Japanese Journal of Applied Physics, 19. 145 doi:10.7567/jjaps.19s3.145
Borel, J. (1980) (Invited) Is SOS Ready for VLSI?. Japanese Journal of Applied Physics, 19. 145 doi:10.7567/jjaps.19s1.145
Matsumoto, Takashi, Ishida, Tetsuro (1980) Anisotropy of Photovoltaic Properties of Au-CdSnP2Diodes. Japanese Journal of Applied Physics, 19. 149 doi:10.7567/jjaps.19s2.149
Yamamoto, K., Kasahara, H., Imasato, I., Abe, K. (1980) Lattice Vibrations in CdGa2S4. Japanese Journal of Applied Physics, 19. 149 doi:10.7567/jjaps.19s3.149
Izumi, Katsutoshi, Doken, Masanobu, Ariyoshi, Hisashi (1980) High Speed C-MOS IC Using Buried SiO2Layers Formed by Ion Implantation. Japanese Journal of Applied Physics, 19. 151 doi:10.7567/jjaps.19s1.151
Kobayashi, Akihiko (1980) Effects of the Basal Plane of CdS Single Crystal on the Growth of Cu2S and the Electric Properties of the Cu2S–CdS Solar Cells. Japanese Journal of Applied Physics, 19. 153 doi:10.7567/jjaps.19s2.153
Trykozko, R., Filipowicz, J. (1980) Preparation and Optical Properties of ZnIn2Se4Crystals. Japanese Journal of Applied Physics, 19. 153 doi:10.7567/jjaps.19s3.153
Sasaki, Nobuo, Nakano, Motoo, Iwai, Takashi (1980) Charge Pumping Memory with SOS-MOS Transistors. Japanese Journal of Applied Physics, 19. 155 doi:10.7567/jjaps.19s1.155
Nakano, Akihiko, Matsumoto, Hitoshi, Nakayama, Nobuo, Ikegami, Seiji (1980) Screen-Printable Electrode Material for CdS and Its Application to Solar Cell. Japanese Journal of Applied Physics, 19. 157 doi:10.7567/jjaps.19s2.157
Mackinnon, A. (1980) On the Electronic Properties of Ordered Vacancy Compounds. Japanese Journal of Applied Physics, 19. 157 doi:10.7567/jjaps.19s3.157
Nakayama, Nobuo, Matsumoto, Hitoshi, Nakano, Akihiko, Ikegami, Seiji (1980) Low Temperature Synthesis of CdTe and Its Application to CdS/CdTe Solar Cell. Japanese Journal of Applied Physics, 19. 161 doi:10.7567/jjaps.19s2.161
Baldereschi, A., Meloni, F. (1980) Crystallographic Distortion and the Interpretation of the UPS Spectrum in α-CdIn2Se4. Japanese Journal of Applied Physics, 19. 161 doi:10.7567/jjaps.19s3.161
Lehovec, K., Lin, Shi-Tron (1980) Electron-Hole Pair Generation at the Silicon-Sapphire Interface of SOS Devices. Japanese Journal of Applied Physics, 19. 161 doi:10.7567/jjaps.19s1.161
Ohsawa, Osamu, Iwase, Mitsuo, Okimura, Hiroshi (1980) Photovoltaic Properties of Cuprous Selenide-Semiconductor Junctions. Japanese Journal of Applied Physics, 19. 165 doi:10.7567/jjaps.19s2.165
Garbato, L., Manca, P., Mula, G. (1980) A Model Semiconductor for Multinary Compounds. Japanese Journal of Applied Physics, 19. 165 doi:10.7567/jjaps.19s3.165
Kurita, Shoichi, Suda, Toshikazu, Yajima, Hiromi, Takagi, Atsuo, Tanaka, Ryutaro (1980) Photoelectric Properties of n-ZnSe/p-Si or p+-GaAs Heterojunctions. Japanese Journal of Applied Physics, 19. 169 doi:10.7567/jjaps.19s2.169
Murrmann, Helmuth, Kranzer, Ditmar (1980) Yield Modeling of Bipolar Integrated Circuits. Japanese Journal of Applied Physics, 19. 169 doi:10.7567/jjaps.19s1.169
Haas, C. (1980) Electronic Structure of Transition Metal Sulfospinels. Japanese Journal of Applied Physics, 19. 171 doi:10.7567/jjaps.19s3.171
Iriyama, Keiji, Shiraki, Masaru, Tsuda, Keishiro, Okada, Akira, Sugi, Michio, Iizima, Shigeru, Kudo, Kazuhiro, Shiokawa, Shoko, Moriizumi, Toyosaka, Yasuda, Tsutomu (1980) Photoelectric Effects in Organic Diodes. Japanese Journal of Applied Physics, 19. 173 doi:10.7567/jjaps.19s2.173
Fukushima, Toshitaka, Ueno, Kouji, Tanaka, Kazuo (1980) A High Speed Schottky 4 k-Bit PROM Using Diffused Eutectic Aluminum Process (Deap) Japanese Journal of Applied Physics, 19. 175 doi:10.7567/jjaps.19s1.175
Warashina, Masatoshi, Ushirokawa, Akio (1980) Simple Method for the Determination of Series Resistance and Maximum Power of Solar Cell. Japanese Journal of Applied Physics, 19. 179 doi:10.7567/jjaps.19s2.179
Sakurai, Hiromi, Akasaka, Yoichi, Murakami, Kenji, Kijima, Koichi, Nakata, Hidefumi (1980) A New Transistor Structure for High Speed Bipolar LSI. Japanese Journal of Applied Physics, 19. 181 doi:10.7567/jjaps.19s1.181
Takenaka, Kazuhiro, Hariu, Takashi, Shibata, Yukio (1980) Plasma-Assisted Deposition of GaAs Thin Films. Japanese Journal of Applied Physics, 19. 183 doi:10.7567/jjaps.19s2.183
Gibart, Pierre, Goldstein, Léon, Dormann, Jean Louis (1980) Crystal Chemistry and Vapor Growth Application to Ternary Semiconductors. Japanese Journal of Applied Physics, 19. 183 doi:10.7567/jjaps.19s3.183
Miyahara, Norio, Yamada, Shin-ichiro, Yamane, Michihiro, Saito, Kazuyuki, Arai, Eisuke, Sunazawa, Manabu (1980) A Single-Chip Speech Synthesizer for the PARCOR CODEC. Japanese Journal of Applied Physics, 19. 187 doi:10.7567/jjaps.19s1.187
Yoshida, Susumu, Mitsui, Kotaro, Oda, Takao, Shirahata, Kiyoshi (1980) High Efficiency AlxGa1-xAs–GaAs Solar Cells with High Open-Circuit Voltage and High Fill Factor. Japanese Journal of Applied Physics, 19. 187 doi:10.7567/jjaps.19s2.187
Masu, Kazuya, Konagai, Makoto, Takahashi, Kiyoshi (1980) (GaAl)As/GaAs Solar Cells–Dopant Study of Zn and Be. Japanese Journal of Applied Physics, 19. 191 doi:10.7567/jjaps.19s2.191
Hsia, Yukun, Chang, Gareth C. C., Erwin, F. Dennis (1980) Adaptive Wafer Scale Integration. Japanese Journal of Applied Physics, 19. 193 doi:10.7567/jjaps.19s1.193
Yoshikawa, Akihiko, Yamaga, Shigeki, Kasai, Haruo, Nishimaki, Masao (1980) A Computer Analysis of CdS–InP Heteroface Solar Cells. Japanese Journal of Applied Physics, 19. 197 doi:10.7567/jjaps.19s2.197
Ashida, Mitsumasa, Hoshikawa, Ryusuke, Matsumura, Nobutake, Ishii, Jun-ichi, Ichikawa, Hiroaki, Sugiura, Yoshihide, Inayosh, Katsuyuki (1980) A 3000-Gate CMOS Masterslice LSI. Japanese Journal of Applied Physics, 19. 203 doi:10.7567/jjaps.19s1.203
Kamimura, Kiichi, Suzuki, Toshihide, Kunioka, Akio (1980) InP (MIS) Schottky Barrier Solar Cells. Japanese Journal of Applied Physics, 19. 203 doi:10.7567/jjaps.19s2.203
Kiyosawa, Teruo, Masumoto, Katashi (1980) Influence of Nonstoichiometry on the Properties of Undoped CdCr2Se4. Japanese Journal of Applied Physics, 19. 203 doi:10.7567/jjaps.19s3.203
Yamazoe, Yoshimitsu, Sasai, Yoichi, Nishino, Taneo, Hamakawa, Yoshihiro (1980) Preparation and Properties of InGaAsPp-nJunction for Fabrication of Photodetectors in Optical Communication Systems. Japanese Journal of Applied Physics, 19. 207 doi:10.7567/jjaps.19s2.207
Chatterjee, P. K., Taylor, G. W., Leiss, J. E. (1980) Analysis and Design of the Taper Isolated Dynamic RAM Threshold Transistor for VLSI dRMs. Japanese Journal of Applied Physics, 19. 209 doi:10.7567/jjaps.19s1.209
Okuda, Takashi, Tsushima, Tachiro, Masuda, Takeo (1980) Crystal Growth of CdCr2Se4from High Temperature Solution. Japanese Journal of Applied Physics, 19. 209 doi:10.7567/jjaps.19s3.209
Minato, Osamu, Sakai, Yoshio, Masuhara, Toshiaki, Sasaki, Toshio (1980) Buried J-FET Powered Static RAM Cell. Japanese Journal of Applied Physics, 19. 213 doi:10.7567/jjaps.19s1.213
Tobe, Miharu, Sakai, Shiro, Umeno, Masayoshi, Amemiya, Yoshifumi (1980) New Wavelength-Demultiplexing InGaAsP/InP Photodiodes. Japanese Journal of Applied Physics, 19. 213 doi:10.7567/jjaps.19s2.213
Nakada, I. (1980) Unit Cell Step Structure on Vapour Grown CdCr2Se4Single Crystals. Japanese Journal of Applied Physics, 19. 215 doi:10.7567/jjaps.19s3.215
(1980) Scope and Vision in the Solar Photovoltaic R & D. Japanese Journal of Applied Physics, 19. 217 doi:10.7567/jjaps.19s2.217
Yatsuda, Yuji, Minami, Shin-ichi, Kondo, Ryuji, Hagiwara, Takaaki, Itoh, Yokichi (1980) Effects of High Temperature Hydrogen Annealing on n-Channel Si-Gate MNOS Devices. Japanese Journal of Applied Physics, 19. 219 doi:10.7567/jjaps.19s1.219
Kambara, T., Oguchi, T., Yokoyama, G., Gondaira, K. I. (1980) Electronic Band Structure of Magnetic Semiconductors with Spinel Structure. Japanese Journal of Applied Physics, 19. 223 doi:10.7567/jjaps.19s3.223
Saito, Shozo, Uchida, Yukimasa, Endo, Norio (1980) N-Channel High Speed Nonvolatile Static RAM Utilizing MNOS Capasitors. Japanese Journal of Applied Physics, 19. 225 doi:10.7567/jjaps.19s1.225
Kondo, Ryuji, Yatsuda, Yuji, Koyanagi, Mitsumasa, Itoh, Yokichi (1980) Dynamic Injection MNOS Memory Devices. Japanese Journal of Applied Physics, 19. 231 doi:10.7567/jjaps.19s1.231
Miyatani, Kazuo (1980) Magnetic Semiconductors: New Interpretation. Japanese Journal of Applied Physics, 19. 237 doi:10.7567/jjaps.19s3.237
Derbenwick, Gary, Dodson, William, Sokel, Ralph (1980) High-Speed Nonvolatile MNOS/CMOS RAM. Japanese Journal of Applied Physics, 19. 239 doi:10.7567/jjaps.19s1.239
Hsia, Yukun, Ngai, K. L. (1980) MNOS Traps and Tailored Trap Distribution Gate Dielectric MNOS. Japanese Journal of Applied Physics, 19. 245 doi:10.7567/jjaps.19s1.245
Tsai, C. S., Wang, J. K., Lee, C. C. (1980) Scanning Acoustic Microscopy for Study of Interfaces in Solid-State Devices. Japanese Journal of Applied Physics, 19. 249 doi:10.7567/jjaps.19s1.249
Wakamura, Kunio, Ogawa, Tsutomu, Arai, Toshihiro (1980) Vibrational Spectra and Effective Charges in Some Spinels. Japanese Journal of Applied Physics, 19. 249 doi:10.7567/jjaps.19s3.249
Amelio, G. F., Chanoski, N. W. (1980) (Invited) The Buried Channel CCD: an Inherently Reliable Technology. Japanese Journal of Applied Physics, 19. 253 doi:10.7567/jjaps.19s1.253
Wakaki, Moriaki, Shintani, Osamu, Ogawa, Tsutomu, Arai, Toshihiro (1980) Optical and Electrical Properties of Inverse Spinel Compound MgIn2S4. Japanese Journal of Applied Physics, 19. 255 doi:10.7567/jjaps.19s3.255
Fujishima, Kazuyasu, Yamada, Michihiro, Tada, Tetsuo, Takano, Satoshi, Yoneda, Masahiro, Gamou, Yoshimi (1980) A New Multiplex Input Technique for High Density CCD Memory. Japanese Journal of Applied Physics, 19. 259 doi:10.7567/jjaps.19s1.259
Nakanishi, Hisayuki, Endo, Saburo, Irie, Taizo (1980) Fundamental Optical Absorption in Crystals of the CdIn2S4–In2S3System. Japanese Journal of Applied Physics, 19. 261 doi:10.7567/jjaps.19s3.261
Sage, Jay P., Cappon, Arthur M. (1980) CCD Analog-Analog Correlator with Four-FET Bridge Multipliers. Japanese Journal of Applied Physics, 19. 265 doi:10.7567/jjaps.19s1.265
Selmi, A., Gibart, P., Goldstein, L., Tomas, A. (1980) Galvanomagnetic Properties of n-Type HgCr2Se4. Japanese Journal of Applied Physics, 19. 267 doi:10.7567/jjaps.19s3.267
Deyhimy, I., Jr., J. S. Harris,, Eden, R. C., Anderson, R. J. (1980) Reduced Geometry GaAs CCD for High Speed Signal Processing. Japanese Journal of Applied Physics, 19. 269 doi:10.7567/jjaps.19s1.269
Nishizawa, Jun-ichi, Tamamushi, Takashige, Ohmi, Tadahiro, Nonaka, Terumoto, Mochida, Yasunori (1980) Static Induction Transistor Memory. Japanese Journal of Applied Physics, 19. 273 doi:10.7567/jjaps.19s1.273
Koguchi, N., Masumoto, K. (1980) Electrical Properties of the N-type Ferromagnetic Semiconductor HgCr1.9In0.1Se4/Ag Schottky-Barrier Diode. Japanese Journal of Applied Physics, 19. 273 doi:10.7567/jjaps.19s3.273
Nishizawa, Jun-ichi, Nonaka, Terumoto, Mochida, Yasunori (1980) Static Induction Transistor Logic. Japanese Journal of Applied Physics, 19. 279 doi:10.7567/jjaps.19s1.279
Watanabe, Tsuneo, Endo, Saburo, Kasai, Akinari (1980) Electrical Properties of ZnCr2Se4. Japanese Journal of Applied Physics, 19. 279 doi:10.7567/jjaps.19s3.279
Shino, Toshio, Kamo, Hisao, Aoki, Kiyoshi, Okano, Susumu (1980) 2 GHz, High Power Silicon SIT's. Japanese Journal of Applied Physics, 19. 283 doi:10.7567/jjaps.19s1.283
Ando, Koji, Nishihara, Yoshikazu (1980) Origin of Semiconductive Conduction in Fe1-xCuxCr2S4(0Japanese Journal of Applied Physics, 19. 285 doi:10.7567/jjaps.19s3.285
Nishizawa, Jun-ichi, Ohmi, Tadahiro, Mochida, Yasunori, Matsuyama, Takeshi (1980) Bipolar Mode Static Induction Transistor. Japanese Journal of Applied Physics, 19. 289 doi:10.7567/jjaps.19s1.289
Yamaguchi, Yasuo, Ohishi, Yasutake, Ohashi, Masayoshi, Yamashita, Osamu, Watanabe, Hiroshi (1980) Electric Conductivity and 3d-Electron Distribution in CuCr2Se4-xBrx. Japanese Journal of Applied Physics, 19. 291 doi:10.7567/jjaps.19s3.291
Antognetti, P., Bisio, G. R., Curatelli, F., Palara, S. (1980) Stationary and Transient Thermal Simulation and Its Use in Power IC Design. Japanese Journal of Applied Physics, 19. 295 doi:10.7567/jjaps.19s1.295
Furukawa, Yoshitaka (1980) Application of InGaAsP and AlGaAsSb for Optical Fiber Transmission. Japanese Journal of Applied Physics, 19. 295 doi:10.7567/jjaps.19s3.295
Shannon, J. M. (1980) A New Majority Carrier Diode–The Camel Diode. Japanese Journal of Applied Physics, 19. 301 doi:10.7567/jjaps.19s1.301
Kajiwara, Yasuya, Aiga, Masao, Higaki, Yukio, Kato, Mari, Yukimoto, Yoshinori, Shirahata, Kiyoshi (1980) A 100 W Static Induction Transistor Operating at 1 GHz. Japanese Journal of Applied Physics, 19. 305 doi:10.7567/jjaps.19s1.305
Goodenough, J. B., Mizushima, K., Takeda, T. (1980) Solid-Solution Oxides for Storage-Battery Electrodes. Japanese Journal of Applied Physics, 19. 305 doi:10.7567/jjaps.19s3.305
Kondo, Hisao, Yukimoto, Yoshinori (1980) A New Transistor with Improved Safe Operating Area. Japanese Journal of Applied Physics, 19. 309 doi:10.7567/jjaps.19s1.309
Zuleeg, R. (1980) (Invited) LSI Prospects of GaAs FET's. Japanese Journal of Applied Physics, 19. 315 doi:10.7567/jjaps.19s1.315
Adams, A. R., Hayes, J. R., Greene, P. D. (1980) The Influence of Alloy Scattering on Electrons and Holes in In1-xGaxAsyP1-y. Japanese Journal of Applied Physics, 19. 315 doi:10.7567/jjaps.19s3.315
Long, S. I., Welch, B. M., Eden, R. C., Lee, F. S., Zucca, R. (1980) MSI High Speed Low Power GaAs Integrated Circuits. Japanese Journal of Applied Physics, 19. 319 doi:10.7567/jjaps.19s1.319
Mukai, Seiji, Shimada, Jun'ichi (1980) LPE Growth and Luminescence of InGaAsP Lattice-Matched to (1, 0, 0) GaAs Substrates. Japanese Journal of Applied Physics, 19. 321 doi:10.7567/jjaps.19s3.321
Yokoyama, Naoki, Mimura, Takashi, Kusakawa, Hirotsugu, Suyama, Katsuhiko, Fukuta, Masumi (1980) Low-Power, High-Speed Integrated Logic with GaAs MOSFET. Japanese Journal of Applied Physics, 19. 325 doi:10.7567/jjaps.19s1.325
Kelso, S. M., Aspnes, D. E., Olson, C. G., Lynch, D. W., Nahory, R. E., Pollack, M. A. (1980) Band Structure and Optical Properties of In1-xGaxAsyP1-y. Japanese Journal of Applied Physics, 19. 327 doi:10.7567/jjaps.19s3.327
Mizutani, Takashi, Kato, Naoki, Ishida, Satoru, Asai, Kazuyoshi, Sakakibara, Yutaka, Komatsu, Kazuhiko, Ohmori, Masamichi (1980) High Speed Enhancement-Mode GaAs MESFET Integrated Circuits. Japanese Journal of Applied Physics, 19. 329 doi:10.7567/jjaps.19s1.329
Kobayashi, Naoki, Horikoshi, Yoshiji, Uemura, Chikao (1980) Semiconductor Materials for 2∼4 µm Region Optical Sources and Room Temperature Operation of InGaAsSb/AlGaAsSb DH Lasers. Japanese Journal of Applied Physics, 19. 333 doi:10.7567/jjaps.19s3.333
Lehovec, Kurt (1980) VLSI GaAs Tunnel Diode-FET Logic and Memory Cell. Japanese Journal of Applied Physics, 19. 335 doi:10.7567/jjaps.19s1.335
Higashisaka, Asamitsu, Furutsuka, Takashi, Aono, Yoichi, Takayama, Yoichiro, Hasegawa, Fumio (1980) Power GaAs MESFETs with a Graded Recess Structure. Japanese Journal of Applied Physics, 19. 339 doi:10.7567/jjaps.19s1.339
Yamaguchi, A., Komiya, S., Nishitani, Y., Akita, K. (1980) Characterization of Defects in InP-InGaAsP Double-Heterostructure Materials. Japanese Journal of Applied Physics, 19. 341 doi:10.7567/jjaps.19s3.341
Mitsui, Yasuo, Kobiki, Michihiro, Wataze, Manabu, Otsubo, Mutsuyuki, Ishii, Takashi, Mitsui, Shigeru (1980) Flip-Chip Mounted GaAs Power FET with Improved Performances in X to Ku Band. Japanese Journal of Applied Physics, 19. 345 doi:10.7567/jjaps.19s1.345
Weber, Bruce, Kulpa, Stanley M. (1980) Photoconductivity from Free Carrier Absorption in Mercury-Cadmium-Telluride. Japanese Journal of Applied Physics, 19. 347 doi:10.7567/jjaps.19s3.347
Itoh, Tomohiro, Yanai, Hisayoshi (1980) Interface Effects on Drain Current Instability in GaAs MESFETs with Buffer Layer. Japanese Journal of Applied Physics, 19. 351 doi:10.7567/jjaps.19s1.351
Kumazaki, Kenji (1980) Ultrasonic Attenuation and Elastic Behavior in Zero-Gap Semiconductor CdxHg1-xSe. Japanese Journal of Applied Physics, 19. 351 doi:10.7567/jjaps.19s3.351
Ohata, Keiichi, Itoh, Hitoshi, Hasegawa, Fumio (1980) Investigation on the Drift of GaAs MESFET's by High Frequency Parameters. Japanese Journal of Applied Physics, 19. 357 doi:10.7567/jjaps.19s1.357
Penchina, Claude M., Klein, A., Weiser, K. (1980) Low-Temperature Anomalies in Photoconductivity of Indium Doped Lead-Tin-Telluride. Japanese Journal of Applied Physics, 19. 357 doi:10.7567/jjaps.19s3.357
Arnold, Norbert, Daembkes, Heinrich, Heime, Klaus (1980) Tin Diffusion from Doped Oxides for Fabricating GaAs Microwave Devices. Japanese Journal of Applied Physics, 19. 361 doi:10.7567/jjaps.19s1.361
Yamada, K., Lindström, M., Heleskivi, J., Galazka, R. R. (1980) Photoconduction in Cd1-xMnxTe. Japanese Journal of Applied Physics, 19. 361 doi:10.7567/jjaps.19s3.361
Abe, Masayuki, Hasegawa, Osamu, Komatsu, Yasuaki, Tōyama, Yoshikazu (1980) A New Type GaAlAs Monolithic Lensed LED. Japanese Journal of Applied Physics, 19. 365 doi:10.7567/jjaps.19s1.365
Tazuke, Yûichi (1980) Hopping Conduction and Magnetic Behavior in VxCr3-xS4(0≦x≦3) Japanese Journal of Applied Physics, 19. 367 doi:10.7567/jjaps.19s3.367
Okamoto, Kenji, Hamakawa, Yoshihiro (1980) High-Brightness Green-Light-Emitting Thin-Film Electroluminescent Device. Japanese Journal of Applied Physics, 19. 371 doi:10.7567/jjaps.19s1.371
Feigelson, R. (1980) Heavy Metal Ternary Compounds for Infrared Acousto-Optic Applications. Japanese Journal of Applied Physics, 19. 371 doi:10.7567/jjaps.19s3.371
Nishizawa, Jun-ichi, Okuno, Yasuo, Koike, Masayoshi, Sakurai, Fumitoshi (1980) Bright Pure Green Emission from N-free GaP LED's. Japanese Journal of Applied Physics, 19. 377 doi:10.7567/jjaps.19s1.377
Kowalczyk, S. P., Kraut, E. A., Ewbank, M. D., Harrison, W. A. (1980) XPS Valence-Band Densities of States of Ternary Chalcogenide Crystals: Application to Tl3AsSe3. Japanese Journal of Applied Physics, 19. 377 doi:10.7567/jjaps.19s3.377
Valassiades, O., Economou, N. A. (1980) Electrical Properties of TlBiTe2. Japanese Journal of Applied Physics, 19. 381 doi:10.7567/jjaps.19s3.381
Mizuki, Toshio, Sugimoto, Yoshimasa, Tanaka, Akira, Sukegawa, Tokuzo (1980) pInxGa1-xSb–nGa1-yAlySb Heterojunction Photodiodes. Japanese Journal of Applied Physics, 19. 383 doi:10.7567/jjaps.19s1.383
Machida, Kazushige (1980) Theory of Antiferromagnetic Superconductors in Rare Earth Ternary Compounds. Japanese Journal of Applied Physics, 19. 385 doi:10.7567/jjaps.19s3.385
Isino, Masahiro, Kobayashi, Norio, Muto, Yoshio (1980) Anomalies in Ultra-High-Field Magnetic Superconductors (Eu1-xSnx)Mo6S8. Japanese Journal of Applied Physics, 19. 389 doi:10.7567/jjaps.19s3.389
Ito, Ryoichi (1980) (Invited) Mode Control in Semiconductor Lasers. Japanese Journal of Applied Physics, 19. 391 doi:10.7567/jjaps.19s1.391
Kamijoh, T., Nozaki, T., Kuriyama, K. (1980) Dielectric Constant and Its Temperature Dependence of LiInSe2. Japanese Journal of Applied Physics, 19. 395 doi:10.7567/jjaps.19s3.395
Ayabe, Masaaki, Matsuda, Osamu, Dosen, Masashi, Santa, Sumio, Watanabe, Naozo (1980) An Improved Etched Buried Heterostructure Laser with Reduced Threshold Current. Japanese Journal of Applied Physics, 19. 399 doi:10.7567/jjaps.19s1.399
Heikens, H. H., Bruggen, C. F. Van, Haas, C. (1980) Influence of Monovalent Ions on the Crystal Habit of Oxides and Chalcogenides. Japanese Journal of Applied Physics, 19. 399 doi:10.7567/jjaps.19s3.399
Gamo, Hideya (1980) Partially Homogeneous Broadening and Saturation in Semiconductor Lasers. Japanese Journal of Applied Physics, 19. 403 doi:10.7567/jjaps.19s1.403
Arai, Shigehisa, Itaya, Yoshio, Suematsu, Yasuharu, Kishino, Katsumi (1980) 1.5–1.6 µm Wavelength (100) GalnAsP/InP DH Lasers. Japanese Journal of Applied Physics, 19. 411 doi:10.7567/jjaps.19s1.411
Dupuis, Russell D. (1980) (Invited) Ga1-xAlxAs–GaAs Heterostructure Lasers Grown by Metalorganic Chemical Vapor Deposition. Japanese Journal of Applied Physics, 19. 415 doi:10.7567/jjaps.19s1.415
Kamejima, Taibun, Yonezu, Hiroo (1980) Catastrophic Optical Damage Generation Mechanism in (AlGa)As DH Lasers. Japanese Journal of Applied Physics, 19. 425 doi:10.7567/jjaps.19s1.425
Kajimura, Takashi, Kuroda, Takao, Yamashita, Shigeo, Todokoro, Hideo, Nakamura, Michiharu, Umeda, Jun-ichi (1980) Degradation Characteristics of Ga1-xAlxAs Visible Diode Lasers. Japanese Journal of Applied Physics, 19. 431 doi:10.7567/jjaps.19s1.431
Kondo, Kazuo, Yamakoshi, Shigenobu, Isozumi, Shoji, Yamaoka, Toyoshi (1980) Slow Degradation Mechanism of GaAlAs Light-Emitting Diodes. Japanese Journal of Applied Physics, 19. 437 doi:10.7567/jjaps.19s1.437
Mizushima, Yoshihiko (1980) (Invited) Materials and Devices for Long Wavelength Optical Communication. Japanese Journal of Applied Physics, 19. 443 doi:10.7567/jjaps.19s1.443
Terui, Hiroshi, Kobayashi, Morio (1980) Thin Film Optical Circuit Fabrication Using a CO2Laser. Japanese Journal of Applied Physics, 19. 451 doi:10.7567/jjaps.19s1.451
Mikami, Osamu (1980) A Coupled-Waveguide TE/TM Mode Splitter. Japanese Journal of Applied Physics, 19. 455 doi:10.7567/jjaps.19s1.455
Sugeta, Takayuki, Urisu, Tsuneo, Sakata, Seizo, Mizushima, Yoshihiko (1980) Metal-Semiconductor-Metal Photodetector for High-Speed Optoelectronic Circuits. Japanese Journal of Applied Physics, 19. 459 doi:10.7567/jjaps.19s1.459
Normandin, R., Stegeman, G. I. (1980) Signal Processing with Nonlinear Integrated Optics. Japanese Journal of Applied Physics, 19. 465 doi:10.7567/jjaps.19s1.465
Tanaka, Toshio, Takamiya, Saburo, Susaki, Makoto Ishii (1980) A New Heat Treatment Technique for No Thermal Conversion of Semi-Insulating GaAs Wafers. Japanese Journal of Applied Physics, 19. 473 doi:10.7567/jjaps.19s1.473
Tamura, Akiyoshi, Oka, Koji, Inoue, Masataka, Shirafuji, Junji, Inuishi, Yoshio (1980) Characterization of InxGa1-xAs1-yPyEpitaxial Layers and Relation to Lattice Matching. Japanese Journal of Applied Physics, 19. 479 doi:10.7567/jjaps.19s1.479
Chang, R. P. H. (1980) Selective Plasma Oxidation of GaAs –A Study of the Interface Properties. Japanese Journal of Applied Physics, 19. 483 doi:10.7567/jjaps.19s1.483
Iwami, Motohiro, Kim, Su Chol, Kammura, Wako, Hiraki, Akio (1980) Low Temperature Alloyed Contact Formation in Various Metal-Semiconductor Couples. Japanese Journal of Applied Physics, 19. 489 doi:10.7567/jjaps.19s1.489
Bubulac, L. O., Tennant, W. E., Shin, S. H., Wang, C. C., Lanir, M., Gertner, E. R., Marshall, E. D. (1980) Ion Implantation Study of HgCdTe. Japanese Journal of Applied Physics, 19. 495 doi:10.7567/jjaps.19s1.495
Oshima, Masaharu, Kawashima, Izumi, Yoshii, Shizuka (1980) Quantitative Analysis of Semiconductor Materials with Secondary Ion Mass Spectrometer. Japanese Journal of Applied Physics, 19. 501 doi:10.7567/jjaps.19s1.501
Takagi, Toshinori, Matsubara, Kakuei, Kondo, Naoto, Fujii, Kenichi, Takaoka, Hiroshi (1980) Magnetooptical Properties of MnBi Films Prepared by lonized-Cluster Beam Deposition Technique. Japanese Journal of Applied Physics, 19. 507 doi:10.7567/jjaps.19s1.507
Tischer, Peter, Pink, Hans, Treitinger, Ludwig (1980) Operation and Stability of SnO2Gas Sensors. Japanese Journal of Applied Physics, 19. 513 doi:10.7567/jjaps.19s1.513
Iizima, S., Okushi, H., Matsuda, A., Yamasaki, S., Nakagawa, K., Matsumura, M., Tanaka, K. (1980) Preparation and Characterization of Reactively-Sputtered Amorphous Si: H Films. Japanese Journal of Applied Physics, 19. 521 doi:10.7567/jjaps.19s1.521
Hwang, Huey-liang, Tang, Ru-shyah, Loferski, Joseph J., Yang, Ying-Chuan (1980) Ion Implanted Grating Type Si Solar Cells. Japanese Journal of Applied Physics, 19. 527 doi:10.7567/jjaps.19s1.527
Godfrey, R. B., Green, M. A. (1980) High Efficiency Silicon Solar Cells Using Minority Carrier MIS Structures. Japanese Journal of Applied Physics, 19. 533 doi:10.7567/jjaps.19s1.533
Warabisako, Terunori, Saitoh, Tadashi, Kuroda, Ekyo, Itoh, Haruo, Nakamura, Nobuo, Tokuyama, Takashi (1980) Efficient Solar Cells from Metallurgical-Grade Silicon. Japanese Journal of Applied Physics, 19. 539 doi:10.7567/jjaps.19s1.539
Okamoto, Hiroaki, Nitta, Yoshiteru, Hamakawa, Yoshihiro (1980) Design Parameters of a-Si: H High-Voltage Photovoltaic Cells. Japanese Journal of Applied Physics, 19. 545 doi:10.7567/jjaps.19s1.545
Sharma, P. P., Anthony, T. C., Ashok, S., Fonash, S. J., Tongson, L. L. (1980) Si and GaAs SIS Heterostructure Solar Cells Using Spray-Deposited ITO. Japanese Journal of Applied Physics, 19. 551 doi:10.7567/jjaps.19s1.551
Hasegawa, Hideki, Tamori, Shinichi, Sawada, Takayuki (1980) High-Efficiency GaAs MOS Solar Cells by Anodization in Active Region. Japanese Journal of Applied Physics, 19. 557 doi:10.7567/jjaps.19s1.557
Yoshida, Susumu, Mitsui, Kotaro, Oda, Takao, Sogo, Toshio, Shirahata, Kiyoshi (1980) High Efficiency AlxGa1-xAs–GaAs Solar Cells with High Open-Circuit Voltage and High Fill Factor. Japanese Journal of Applied Physics, 19. 563 doi:10.7567/jjaps.19s1.563
Tomar, M. S., Garcia, F. J. (1980) A Comparative Study of Cu2S–ZnxCd1-xS and Cu2S–CdS Thin Film Solar Cells Prepared by Solid State Reaction. Japanese Journal of Applied Physics, 19. 567 doi:10.7567/jjaps.19s1.567
Imamura, Yoshinori, Ataka, Saburo, Takasaki, Yukio, Kusano, Chushiro, Ishioka, Sachio, Hirai, Tadaaki, Maruyama, Eiichi (1980) Amorphous Silicon Image Pickup Devices. Japanese Journal of Applied Physics, 19. 573 doi:10.7567/jjaps.19s1.573
Terao, Motoyasu, Shigematsu, Kazuo, Ojima, Masahiro, Taniguchi, Yoshio, Horigome, Shinkichi, Yonezawa, Seiji (1980) High Density Video Signal Recording in a New Amorphous Chalcogenide Thin Film. Japanese Journal of Applied Physics, 19. 579 doi:10.7567/jjaps.19s1.579
Wiik, Tapio, Ronkainen, Hannu, Stubb, Tor (1980) Experimental Integrated Microwave Circuits with Josephson Junctions. Japanese Journal of Applied Physics, 19. 587 doi:10.7567/jjaps.19s1.587
Shinoki, Fujitoshi, Takada, Susumu, Kosaka, Shin, Hayakawa, Hisao (1980) Fabrication of High Quality NbN/Pb Josephson Junction. Japanese Journal of Applied Physics, 19. 591 doi:10.7567/jjaps.19s1.591
Hasuo, Shinya, Suzuki, Hideo, Dazai, Koichi (1980) Fabrication of DC-SQUIDs and Their Characteristics for Digital Applications. Japanese Journal of Applied Physics, 19. 595 doi:10.7567/jjaps.19s1.595
Tamura, Hirotaka, Okabe, Yoichi, Sugano, Takuo (1980) Fabrication of Josephson Weak Links Using Electron Beam Lithography and Ion-Etching, and Proposal of a New Single Flux Quantum Logic. Japanese Journal of Applied Physics, 19. 601 doi:10.7567/jjaps.19s1.601
Takada, Susumu, Kosaka, Shin, Hayakawa, Hisao (1980) Current Injection Logic Gate with Four Josephson Junctions. Japanese Journal of Applied Physics, 19. 607 doi:10.7567/jjaps.19s1.607
Huber, D., Sirtl, E. (1980) (Invited) Advances in Silicon Crystal Properties. Japanese Journal of Applied Physics, 19. 615 doi:10.7567/jjaps.19s1.615
Ikuta, Kenji, Matsuoka, Yutaka, Takaoka, Hidetoshi (1980) Electrical Characterization of Micro Defects in Silicon Crystal. Japanese Journal of Applied Physics, 19. 621 doi:10.7567/jjaps.19s1.621
Hammond, R. B., Silver, R. N. (1980) Impurity Content Determination in Si by Exciton Decays. Japanese Journal of Applied Physics, 19. 627 doi:10.7567/jjaps.19s1.627
Tajima, Michio, Yusa, Atsushi, Abe, Takao (1980) Characterization of Residual Impurities in Highly Pure Si Crystals by Photoluminescence Technique. Japanese Journal of Applied Physics, 19. 631 doi:10.7567/jjaps.19s1.631
Ota, Yusuke (1980) Ion Implanted Silicon Molecular Beam Epitaxy (I2Si MBE) Japanese Journal of Applied Physics, 19. 637 doi:10.7567/jjaps.19s1.637
Sugiura, Hideo (1980) Doping Profile Control in Si MBE Film with Sb Ion Doping. Japanese Journal of Applied Physics, 19. 641 doi:10.7567/jjaps.19s1.641
Suzuki, Setsu, Takai, Hiroshi, Okuda, Hidekazu, Itoh, Tadatsugu (1980) Silicon Epitaxy by Plasma Dissociation of Silane. Japanese Journal of Applied Physics, 19. 647 doi:10.7567/jjaps.19s1.647
Kudo, B. (1980) (Invited) Horizontal Pulling of Silicon Single Crystals. Japanese Journal of Applied Physics, 19. 653 doi:10.7567/jjaps.19s1.653
Tsuya, Noboru, Takeuchi, Toshio, Arai, Ken Ichi, Ohmori, Kenji, Ebina, Atsuko, Takahashi, Tadashi, Kuroiwa, Akihiko, Ojima, Teruhiko (1980) Polycrystalline Silicon Ribbons Made by Rapid Quenching Methods. Japanese Journal of Applied Physics, 19. 655 doi:10.7567/jjaps.19s1.655
Tsai, Chen S. (1980) (Invited) Integrated Acoustooptical Circuits for Real-Time Wideband Signal Processing. Japanese Journal of Applied Physics, 19. 661 doi:10.7567/jjaps.19s1.661
Cafarella, John H. (1980) (Invited) Surface-Acoustic-Wave Devices for Spread-Spectrum Communication. Japanese Journal of Applied Physics, 19. 667 doi:10.7567/jjaps.19s1.667
Tsubouchi, Kazuo, Minagawa, Shoichi, Okamoto, Takeshi, Mikoshiba, Nobuo (1980) Tunable Surface-Acoustic-Wave Generator on a Monolithic MIS Structure. Japanese Journal of Applied Physics, 19. 675 doi:10.7567/jjaps.19s1.675
Lean, E. G., Chen, W. H. (1980) Large Angle Acoustic Beam Steering in Acoustically Anisotropic Crystal. Japanese Journal of Applied Physics, 19. 681 doi:10.7567/jjaps.19s1.681
Ewen, J. F., Gunshor, R. L., Weston, V. H. (1980) Surface Acoustic Solitons. Japanese Journal of Applied Physics, 19. 683 doi:10.7567/jjaps.19s1.683
Proklov, Valery, Mirgorodsky, Vladimir, Ushatkin, Evgeny, Gulyaev, Yury, Meriakri, Vyacheslav (1980) Observation of the Effective Diffraction of Submillimeter Radiation on the Electronic Waves in n-InSb. Japanese Journal of Applied Physics, 19. 687 doi:10.7567/jjaps.19s1.687
(1980, January) Japanese Journal of Applied Physics Vol. 19 (1) Japan Society of Applied Physics
(1980, February) Japanese Journal of Applied Physics Vol. 19 (2) Japan Society of Applied Physics
(1980, March) Japanese Journal of Applied Physics Vol. 19 (3) Japan Society of Applied Physics
(1980, April) Japanese Journal of Applied Physics Vol. 19 (4) Japan Society of Applied Physics
(1980, May) Japanese Journal of Applied Physics Vol. 19 (5) Japan Society of Applied Physics
(1980, June) Japanese Journal of Applied Physics Vol. 19 (6) Japan Society of Applied Physics
(1980, July) Japanese Journal of Applied Physics Vol. 19 (7) Japan Society of Applied Physics
(1980, August) Japanese Journal of Applied Physics Vol. 19 (8) Japan Society of Applied Physics
(1980, September) Japanese Journal of Applied Physics Vol. 19 (9) Japan Society of Applied Physics
(1980, October) Japanese Journal of Applied Physics Vol. 19 (10) Japan Society of Applied Physics
(1980, November) Japanese Journal of Applied Physics Vol. 19 (11) Japan Society of Applied Physics
(1980, December) Japanese Journal of Applied Physics Vol. 19 (12) Japan Society of Applied Physics

See Also

These are possibly similar items as determined by title/reference text matching only.

(1987) Japanese Journal of Applied Physics Vol. 26. Japan Society of Applied Physics
(1988) Japanese Journal of Applied Physics Vol. 27. Japan Society of Applied Physics
(1989) Japanese Journal of Applied Physics Vol. 28. Japan Society of Applied Physics
(2011) Japanese Journal of Applied Physics Vol. 50. Japan Society of Applied Physics
(2023) Japanese Journal of Applied Physics Vol. 62. Japan Society of Applied Physics
(1962) Japanese Journal of Applied Physics Vol. 1. Japan Society of Applied Physics
(1963) Japanese Journal of Applied Physics Vol. 2. Japan Society of Applied Physics
(1974) Japanese Journal of Applied Physics Vol. 3. Japan Society of Applied Physics
(1965) Japanese Journal of Applied Physics Vol. 4. Japan Society of Applied Physics
(1966) Japanese Journal of Applied Physics Vol. 5. Japan Society of Applied Physics
(1967) Japanese Journal of Applied Physics Vol. 6. Japan Society of Applied Physics
 
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