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Ohata, Keiichi, Itoh, Hitoshi, Hasegawa, Fumio (1980) Investigation on the Drift of GaAs MESFET's by High Frequency Parameters. Japanese Journal of Applied Physics, 19. 357 doi:10.7567/jjaps.19s1.357

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Reference TypeJournal (article/letter/editorial)
TitleInvestigation on the Drift of GaAs MESFET's by High Frequency Parameters
JournalJapanese Journal of Applied Physics
AuthorsOhata, KeiichiAuthor
Itoh, HitoshiAuthor
Hasegawa, FumioAuthor
Year1980 (January 1)Volume19
PublisherJapan Society of Applied Physics
DOIdoi:10.7567/jjaps.19s1.357Search in ResearchGate
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Mindat Ref. ID14983460Long-form Identifiermindat:1:5:14983460:7
GUID0
Full ReferenceOhata, Keiichi, Itoh, Hitoshi, Hasegawa, Fumio (1980) Investigation on the Drift of GaAs MESFET's by High Frequency Parameters. Japanese Journal of Applied Physics, 19. 357 doi:10.7567/jjaps.19s1.357
Plain TextOhata, Keiichi, Itoh, Hitoshi, Hasegawa, Fumio (1980) Investigation on the Drift of GaAs MESFET's by High Frequency Parameters. Japanese Journal of Applied Physics, 19. 357 doi:10.7567/jjaps.19s1.357
In(1980) Japanese Journal of Applied Physics Vol. 19. Japan Society of Applied Physics

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Nozaki, Tadatoshi, Ohata, Keiichi (1977) Sub-Micron Gate GaAs MESFET's with Ion-Implanted Channels. Japanese Journal of Applied Physics, 16. 111 doi:10.7567/jjaps.16s1.111
Higashisaka, Asamitsu, Furutsuka, Takashi, Aono, Yoichi, Takayama, Yoichiro, Hasegawa, Fumio (1980) Power GaAs MESFETs with a Graded Recess Structure. Japanese Journal of Applied Physics, 19. 339 doi:10.7567/jjaps.19s1.339
Hasegawa, Hideki, Tamori, Shinichi, Sawada, Takayuki (1980) High-Efficiency GaAs MOS Solar Cells by Anodization in Active Region. Japanese Journal of Applied Physics, 19. 557 doi:10.7567/jjaps.19s1.557
Ohata, Keiichi, Terao, Hiroshi, Sunakawa, Haruo, Takayama, Yoichiro (1983) MOCVD GaAlAs Hetero-Buffer GaAs Low-Noise MESFETs. Japanese Journal of Applied Physics, 22. 365 doi:10.7567/jjaps.22s1.365
Itoh, Tomohiro, Yanai, Hisayoshi (1980) Interface Effects on Drain Current Instability in GaAs MESFETs with Buffer Layer. Japanese Journal of Applied Physics, 19. 351 doi:10.7567/jjaps.19s1.351
Zuleeg, R. (1980) (Invited) LSI Prospects of GaAs FET's. Japanese Journal of Applied Physics, 19. 315 doi:10.7567/jjaps.19s1.315
Aono, Yoichi, Higashisaka, Asamitsu, Ogawa, Tadayuki, Hasegawa, Fumio (1978) X-and Ku-Band Performance of Submicron Gate GaAs Power FET's. Japanese Journal of Applied Physics, 17. 147 doi:10.7567/jjaps.17s1.147
Suzuki, Setsu, Takai, Hiroshi, Okuda, Hidekazu, Itoh, Tadatsugu (1980) Silicon Epitaxy by Plasma Dissociation of Silane. Japanese Journal of Applied Physics, 19. 647 doi:10.7567/jjaps.19s1.647
Morita, Masahiko, Sato, Fumio (1983) Photoacoustic Spectra on Laser-Annealed GaAs Surfaces. Japanese Journal of Applied Physics, 22. 199 doi:10.7567/jjaps.22s3.199
Iwata, Naotaka, Hasegawa, Fumio, Yamamoto, Norio, Nannichi, Yasuo (1983) Comparison of Deep Energy Levels in HB and LEC Undoped Bulk GaAs. Japanese Journal of Applied Physics, 22. 595 doi:10.7567/jjaps.22s1.595
Dupuis, Russell D. (1980) (Invited) Ga1-xAlxAs–GaAs Heterostructure Lasers Grown by Metalorganic Chemical Vapor Deposition. Japanese Journal of Applied Physics, 19. 415 doi:10.7567/jjaps.19s1.415
 
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