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Koguchi, N., Masumoto, K. (1980) Electrical Properties of the N-type Ferromagnetic Semiconductor HgCr1.9In0.1Se4/Ag Schottky-Barrier Diode. Japanese Journal of Applied Physics, 19. 273 doi:10.7567/jjaps.19s3.273

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Reference TypeJournal (article/letter/editorial)
TitleElectrical Properties of the N-type Ferromagnetic Semiconductor HgCr1.9In0.1Se4/Ag Schottky-Barrier Diode
JournalJapanese Journal of Applied Physics
AuthorsKoguchi, N.Author
Masumoto, K.Author
Year1980 (January 1)Volume19
PublisherJapan Society of Applied Physics
DOIdoi:10.7567/jjaps.19s3.273Search in ResearchGate
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Mindat Ref. ID14983602Long-form Identifiermindat:1:5:14983602:1
GUID0
Full ReferenceKoguchi, N., Masumoto, K. (1980) Electrical Properties of the N-type Ferromagnetic Semiconductor HgCr1.9In0.1Se4/Ag Schottky-Barrier Diode. Japanese Journal of Applied Physics, 19. 273 doi:10.7567/jjaps.19s3.273
Plain TextKoguchi, N., Masumoto, K. (1980) Electrical Properties of the N-type Ferromagnetic Semiconductor HgCr1.9In0.1Se4/Ag Schottky-Barrier Diode. Japanese Journal of Applied Physics, 19. 273 doi:10.7567/jjaps.19s3.273
In(1980) Japanese Journal of Applied Physics Vol. 19. Japan Society of Applied Physics

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Koguchi, N., Masumoto, K. (1980) Transport properties of n-type ferromagnetic semiconductor HgCr2−xInxSe4(x = 0.100). Journal of Physics and Chemistry of Solids, 41. 1279-1284 doi:10.1016/0022-3697(80)90165-1
Valassiades, O., Economou, N. A. (1980) Electrical Properties of TlBiTe2. Japanese Journal of Applied Physics, 19. 381 doi:10.7567/jjaps.19s3.381
Kamimura, Kiichi, Suzuki, Toshihide, Kunioka, Akio (1980) InP (MIS) Schottky Barrier Solar Cells. Japanese Journal of Applied Physics, 19. 203 doi:10.7567/jjaps.19s2.203
Kiyosawa, Teruo, Masumoto, Katashi (1980) Influence of Nonstoichiometry on the Properties of Undoped CdCr2Se4. Japanese Journal of Applied Physics, 19. 203 doi:10.7567/jjaps.19s3.203
Selmi, A., Gibart, P., Goldstein, L., Tomas, A. (1980) Galvanomagnetic Properties of n-Type HgCr2Se4. Japanese Journal of Applied Physics, 19. 267 doi:10.7567/jjaps.19s3.267
Lee, R. N. (1974) O2on PbS: A New Surface Mechanism Affecting Semiconductor Electrical Properties. Japanese Journal of Applied Physics, 13. 311 doi:10.7567/jjaps.2s2.311
Shannon, J. M. (1980) A New Majority Carrier Diode–The Camel Diode. Japanese Journal of Applied Physics, 19. 301 doi:10.7567/jjaps.19s1.301
Joshi, N. V. (1980) Vibrational Properties of Off Diagonally Disordered CuInS2Crystal. Japanese Journal of Applied Physics, 19. 117 doi:10.7567/jjaps.19s3.117
Isomura, Shigehiro, Kaneko, Hideki, Tomioka, Shinji, Nakatani, Isao, Masumoto, Katashi (1980) Properties of CuInSe2Thin Film Semiconductors. Japanese Journal of Applied Physics, 19. 23 doi:10.7567/jjaps.19s3.23
Watanabe, Tsuneo, Endo, Saburo, Kasai, Akinari (1980) Electrical Properties of ZnCr2Se4. Japanese Journal of Applied Physics, 19. 279 doi:10.7567/jjaps.19s3.279
Ohsawa, Osamu, Iwase, Mitsuo, Okimura, Hiroshi (1980) Photovoltaic Properties of Cuprous Selenide-Semiconductor Junctions. Japanese Journal of Applied Physics, 19. 165 doi:10.7567/jjaps.19s2.165
 
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