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Goodenough, J. B., Mizushima, K., Takeda, T. (1980) Solid-Solution Oxides for Storage-Battery Electrodes. Japanese Journal of Applied Physics, 19. 305 doi:10.7567/jjaps.19s3.305

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Reference TypeJournal (article/letter/editorial)
TitleSolid-Solution Oxides for Storage-Battery Electrodes
JournalJapanese Journal of Applied Physics
AuthorsGoodenough, J. B.Author
Mizushima, K.Author
Takeda, T.Author
Year1980 (January 1)Volume19
PublisherJapan Society of Applied Physics
DOIdoi:10.7567/jjaps.19s3.305Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14983609Long-form Identifiermindat:1:5:14983609:0
GUID0
Full ReferenceGoodenough, J. B., Mizushima, K., Takeda, T. (1980) Solid-Solution Oxides for Storage-Battery Electrodes. Japanese Journal of Applied Physics, 19. 305 doi:10.7567/jjaps.19s3.305
Plain TextGoodenough, J. B., Mizushima, K., Takeda, T. (1980) Solid-Solution Oxides for Storage-Battery Electrodes. Japanese Journal of Applied Physics, 19. 305 doi:10.7567/jjaps.19s3.305
In(1980) Japanese Journal of Applied Physics Vol. 19. Japan Society of Applied Physics

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Mizushima, Yoshihiko (1980) (Invited) Materials and Devices for Long Wavelength Optical Communication. Japanese Journal of Applied Physics, 19. 443 doi:10.7567/jjaps.19s1.443
Sugeta, Takayuki, Urisu, Tsuneo, Sakata, Seizo, Mizushima, Yoshihiko (1980) Metal-Semiconductor-Metal Photodetector for High-Speed Optoelectronic Circuits. Japanese Journal of Applied Physics, 19. 459 doi:10.7567/jjaps.19s1.459
Ito, Kentaro, Kojima, Kunio (1980) Solution-Grown Silicon Solar Cells. Japanese Journal of Applied Physics, 19. 37 doi:10.7567/jjaps.19s2.37
Tsai, C. S., Wang, J. K., Lee, C. C. (1980) Scanning Acoustic Microscopy for Study of Interfaces in Solid-State Devices. Japanese Journal of Applied Physics, 19. 249 doi:10.7567/jjaps.19s1.249
Ito, Hideo, Oka, Masayoshi, Ogino, Toshio, Takeda, Akitsu, Mizushima, Yoshihiko (1982) Selenium Thin Film Solar Cell. Japanese Journal of Applied Physics, 21. 77 doi:10.7567/jjaps.21s2.77
Borel, J. (1980) (Invited) Is SOS Ready for VLSI?. Japanese Journal of Applied Physics, 19. 145 doi:10.7567/jjaps.19s1.145
Arnold, Norbert, Daembkes, Heinrich, Heime, Klaus (1980) Tin Diffusion from Doped Oxides for Fabricating GaAs Microwave Devices. Japanese Journal of Applied Physics, 19. 361 doi:10.7567/jjaps.19s1.361
Kamijoh, T., Nozaki, T., Kuriyama, K. (1980) Dielectric Constant and Its Temperature Dependence of LiInSe2. Japanese Journal of Applied Physics, 19. 395 doi:10.7567/jjaps.19s3.395
Okazaki, Shinji, Mochiji, Kozo, Takeda, Eiji, Maruyama, Yoji (1980) Electron Beam Mask Fabrication for MOSLSI's with 1.5 µm Design Rule. Japanese Journal of Applied Physics, 19. 51 doi:10.7567/jjaps.19s1.51
Tarui, Yasuo (1980) (Invited) Basic Technology for VLSI. Japanese Journal of Applied Physics, 19. 15 doi:10.7567/jjaps.19s1.15
Aoki, Masaharu (1980) Opening Address. Japanese Journal of Applied Physics, 19. 1 doi:10.7567/jjaps.19s3.1
 
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