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Bubulac, L. O., Tennant, W. E., Shin, S. H., Wang, C. C., Lanir, M., Gertner, E. R., Marshall, E. D. (1980) Ion Implantation Study of HgCdTe. Japanese Journal of Applied Physics, 19. 495 doi:10.7567/jjaps.19s1.495

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Reference TypeJournal (article/letter/editorial)
TitleIon Implantation Study of HgCdTe
JournalJapanese Journal of Applied Physics
AuthorsBubulac, L. O.Author
Tennant, W. E.Author
Shin, S. H.Author
Wang, C. C.Author
Lanir, M.Author
Gertner, E. R.Author
Marshall, E. D.Author
Year1980 (January 1)Volume19
PublisherJapan Society of Applied Physics
DOIdoi:10.7567/jjaps.19s1.495Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14983485Long-form Identifiermindat:1:5:14983485:0
GUID0
Full ReferenceBubulac, L. O., Tennant, W. E., Shin, S. H., Wang, C. C., Lanir, M., Gertner, E. R., Marshall, E. D. (1980) Ion Implantation Study of HgCdTe. Japanese Journal of Applied Physics, 19. 495 doi:10.7567/jjaps.19s1.495
Plain TextBubulac, L. O., Tennant, W. E., Shin, S. H., Wang, C. C., Lanir, M., Gertner, E. R., Marshall, E. D. (1980) Ion Implantation Study of HgCdTe. Japanese Journal of Applied Physics, 19. 495 doi:10.7567/jjaps.19s1.495
In(1980) Japanese Journal of Applied Physics Vol. 19. Japan Society of Applied Physics

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Gertner, E. R., Shin, S. H., Edwall, D. D., Bubulac, L. O., Lo, D. S., Tennant, W. E. (1985) High‐performance photovoltaic infrared devices in Hg1−xCdxTe on GaAs. Applied Physics Letters, 46 (9). 851-853 doi:10.1063/1.95861
Bubulac, L. O., Tennant, W. E. (1987) Role of Hg in junction formation in ion‐implanted HgCdTe. Applied Physics Letters, 51 (5). 355-357 doi:10.1063/1.98439
Kelso, S. M., Aspnes, D. E., Olson, C. G., Lynch, D. W., Nahory, R. E., Pollack, M. A. (1980) Band Structure and Optical Properties of In1-xGaxAsyP1-y. Japanese Journal of Applied Physics, 19. 327 doi:10.7567/jjaps.19s3.327
Bubulac, L. O., Lo, D. S., Tennant, W. E., Edwall, D. D., Chen, J. C., Ratusnik, J., Robinson, J. C., Bostrup, G. (1987) ponnion‐implanted junctions in liquid phase epitaxy HgCdTe layers on CdTe substrates. Applied Physics Letters, 50 (22). 1586-1588 doi:10.1063/1.97788
Arias, Jose, Zandian, M., Pasko, J. G., Shin, S. H., Bubulac, L. O., DeWames, R. E., Tennant, W. E. (1991) Molecular‐beam epitaxy growth andinsituarsenic doping ofp‐on‐nHgCdTe heterojunctions. Journal of Applied Physics, 69 (4). 2143-2148 doi:10.1063/1.348741
Arias, J. M., Pasko, J. G., Zandian, M., Shin, S. H., Williams, G. M., Bubulac, L. O., DeWames, R. E., Tennant, W. E. (1993) Planarp‐on‐nHgCdTe heterostructure photovoltaic detectors. Applied Physics Letters, 62 (9). 976-978 doi:10.1063/1.108538
Svensson, E. C., Tennant, D. C. (1987) Search for Single-Particle Excitations in Super fluid4He. Japanese Journal of Applied Physics, 26. 31 doi:10.7567/jjaps.26s3.31
Bubulac, L. O., Andrews, A. M., Gertner, E. R., Cheung, D. T. (1980) Backside‐illuminated InAsSb/GaSb broadband detectors. Applied Physics Letters, 36 (9). 734-736 doi:10.1063/1.91649
Bubulac, L. O., Tennant, W. E. (1988) Observation of charge‐separating defects in HgCdTe using remote contact electron beam induced current. Applied Physics Letters, 52 (15). 1255-1257 doi:10.1063/1.99173
Izumi, Katsutoshi, Doken, Masanobu, Ariyoshi, Hisashi (1980) High Speed C-MOS IC Using Buried SiO2Layers Formed by Ion Implantation. Japanese Journal of Applied Physics, 19. 151 doi:10.7567/jjaps.19s1.151
Wenger, L. E., Chen, J. T., Logothetis, E. M., Win, W., McEwan, C. J., Soltis, R., Hurley, M. (1987) Superconducting properties of Y–Ba–Cu–O Compounds. Japanese Journal of Applied Physics, 26. 1203 doi:10.7567/jjaps.26s3.1203
 
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