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Godfrey, R. B., Green, M. A. (1980) High Efficiency Silicon Solar Cells Using Minority Carrier MIS Structures. Japanese Journal of Applied Physics, 19. 533 doi:10.7567/jjaps.19s1.533

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Reference TypeJournal (article/letter/editorial)
TitleHigh Efficiency Silicon Solar Cells Using Minority Carrier MIS Structures
JournalJapanese Journal of Applied Physics
AuthorsGodfrey, R. B.Author
Green, M. A.Author
Year1980 (January 1)Volume19
PublisherJapan Society of Applied Physics
DOIdoi:10.7567/jjaps.19s1.533Search in ResearchGate
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Mindat Ref. ID14983492Long-form Identifiermindat:1:5:14983492:8
GUID0
Full ReferenceGodfrey, R. B., Green, M. A. (1980) High Efficiency Silicon Solar Cells Using Minority Carrier MIS Structures. Japanese Journal of Applied Physics, 19. 533 doi:10.7567/jjaps.19s1.533
Plain TextGodfrey, R. B., Green, M. A. (1980) High Efficiency Silicon Solar Cells Using Minority Carrier MIS Structures. Japanese Journal of Applied Physics, 19. 533 doi:10.7567/jjaps.19s1.533
In(1980) Japanese Journal of Applied Physics Vol. 19. Japan Society of Applied Physics

See Also

These are possibly similar items as determined by title/reference text matching only.

Green, M. A., Godfrey, R. B. (1978) MIS Silicon Solar Cells. Japanese Journal of Applied Physics, 17. 295 doi:10.7567/jjaps.17s1.295
Usami, Akira, Ishihara, Shin-ichiro, Sugano, Masahide (1980) Development of High Efficiency Epitaxial Silicon Solar Cells. Japanese Journal of Applied Physics, 19. 43 doi:10.7567/jjaps.19s2.43
Matsunami, Hiroyuki, Matsumoto, Shigenori, Tanaka, Tetsuro (1980) Fundamental Properties of MIS Solar Cells. Japanese Journal of Applied Physics, 19. 27 doi:10.7567/jjaps.19s2.27
Kamimura, Kiichi, Suzuki, Toshihide, Kunioka, Akio (1980) InP (MIS) Schottky Barrier Solar Cells. Japanese Journal of Applied Physics, 19. 203 doi:10.7567/jjaps.19s2.203
Ito, Kentaro, Kojima, Kunio (1980) Solution-Grown Silicon Solar Cells. Japanese Journal of Applied Physics, 19. 37 doi:10.7567/jjaps.19s2.37
Hasegawa, Hideki, Tamori, Shinichi, Sawada, Takayuki (1980) High-Efficiency GaAs MOS Solar Cells by Anodization in Active Region. Japanese Journal of Applied Physics, 19. 557 doi:10.7567/jjaps.19s1.557
Ikawa, Yasuo, Hojo, Akimichi, Nakagawa, Masashi (1978) Minority Carrier Diffusion Length in Si Ribbon Solar Cells. Japanese Journal of Applied Physics, 17. 315 doi:10.7567/jjaps.17s1.315
Yoshida, Susumu, Mitsui, Kotaro, Oda, Takao, Shirahata, Kiyoshi (1980) High Efficiency AlxGa1-xAs–GaAs Solar Cells with High Open-Circuit Voltage and High Fill Factor. Japanese Journal of Applied Physics, 19. 187 doi:10.7567/jjaps.19s2.187
Romeo, N. (1980) Solar Cells Made by Chalcopyrite Materials. Japanese Journal of Applied Physics, 19. 5 doi:10.7567/jjaps.19s3.5
Godfrey, R. B., Green, M. A. (1979) 655 mV open‐circuit voltage, 17.6% efficient silicon MIS solar cells. Applied Physics Letters, 34 (11). 790-793 doi:10.1063/1.90646
Saito, Takeshi, Noguchi, Kesao, Kaneko, Sctsuo, Terasawa, Yoshizumi (1980) Silicon Epitaxial Solar Cells by Ion-Plating Deposition. Japanese Journal of Applied Physics, 19. 49 doi:10.7567/jjaps.19s2.49
 
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