Vote for your favorite mineral in #MinCup25! - Titanite vs. Thortveitite
It's a pair of T-minerals with as versatile #titanite faces off against the home of rare earth elements #thortveitite.
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Dang, Luong Mo, Iwai, Hiroshi, Nishi, Yoshio, Taguchi, Shinji (1980) P-Channel versus N-Channel in MOS-ICs of Submicron Channel Lengths. Japanese Journal of Applied Physics, 19. 107 doi:10.7567/jjaps.19s1.107

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleP-Channel versus N-Channel in MOS-ICs of Submicron Channel Lengths
JournalJapanese Journal of Applied Physics
AuthorsDang, Luong MoAuthor
Iwai, HiroshiAuthor
Nishi, YoshioAuthor
Taguchi, ShinjiAuthor
Year1980 (January 1)Volume19
PublisherJapan Society of Applied Physics
DOIdoi:10.7567/jjaps.19s1.107Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14983411Long-form Identifiermindat:1:5:14983411:9
GUID0
Full ReferenceDang, Luong Mo, Iwai, Hiroshi, Nishi, Yoshio, Taguchi, Shinji (1980) P-Channel versus N-Channel in MOS-ICs of Submicron Channel Lengths. Japanese Journal of Applied Physics, 19. 107 doi:10.7567/jjaps.19s1.107
Plain TextDang, Luong Mo, Iwai, Hiroshi, Nishi, Yoshio, Taguchi, Shinji (1980) P-Channel versus N-Channel in MOS-ICs of Submicron Channel Lengths. Japanese Journal of Applied Physics, 19. 107 doi:10.7567/jjaps.19s1.107
In(1980) Japanese Journal of Applied Physics Vol. 19. Japan Society of Applied Physics

See Also

These are possibly similar items as determined by title/reference text matching only.

Konaka, Masami, Iwai, Hiroshi, Nishi, Yoshio (1979) Suppression of Anomalous Drain Current in Short Channel MOSFET. Japanese Journal of Applied Physics, 18. 27 doi:10.7567/jjaps.18s1.27
Miyao, Masanobu, Koyanagi, Mitsumasa, Tamura, Hiroshi, Hashimoto, Norikazu, Tokuyama, Takashi (1980) Short Channel MOS FET's Fabricated by Self-Aligned Ion Implantation and Laser Annealing. Japanese Journal of Applied Physics, 19. 129 doi:10.7567/jjaps.19s1.129
Sakamoto, Mitsuru, Wada, Toshio, Takada, Masahide, Kudoh, Osamu, Yamanaka, Hiroshi, Suzuki, Shunichi, Matsue, Shigeki (1979) A 64K Dynamic MOS-RAM Using Short-Channel, Channel-Dope Technology. Japanese Journal of Applied Physics, 18. 85 doi:10.7567/jjaps.18s1.85
Amelio, G. F., Chanoski, N. W. (1980) (Invited) The Buried Channel CCD: an Inherently Reliable Technology. Japanese Journal of Applied Physics, 19. 253 doi:10.7567/jjaps.19s1.253
Saito, Shozo, Uchida, Yukimasa, Endo, Norio (1980) N-Channel High Speed Nonvolatile Static RAM Utilizing MNOS Capasitors. Japanese Journal of Applied Physics, 19. 225 doi:10.7567/jjaps.19s1.225
Sasaki, Nobuo, Nakano, Motoo, Iwai, Takashi (1980) Charge Pumping Memory with SOS-MOS Transistors. Japanese Journal of Applied Physics, 19. 155 doi:10.7567/jjaps.19s1.155
Yamaji, Masaharu, Jonishi, Akihiro, Sumida, Hitoshi, Hashimoto, Yoshio (2015) Proposal of a new lateral high-voltage n-channel MOS structure with a reduced parasitic output capacitance for a level-shift circuit integrated in 800 V-class high-voltage ICs. Japanese Journal of Applied Physics, 54 (4) 4 doi:10.7567/jjap.54.04dp10
Pekola, J. P., Davis, J. C., Packard, R. E. (1987) Suppression of the Critical Current and Transition Temperature of Superfluid3He in a Single Submicron Cylindrical Channel. Japanese Journal of Applied Physics, 26. 113 doi:10.7567/jjaps.26s3.113
Yatsuda, Yuji, Minami, Shin-ichi, Kondo, Ryuji, Hagiwara, Takaaki, Itoh, Yokichi (1980) Effects of High Temperature Hydrogen Annealing on n-Channel Si-Gate MNOS Devices. Japanese Journal of Applied Physics, 19. 219 doi:10.7567/jjaps.19s1.219
Yu, H. N. (1980) (Invited) MOS Devices Fabricated by Electron Beam Lithography. Japanese Journal of Applied Physics, 19. 13 doi:10.7567/jjaps.19s1.13
Imai, Kazuo, Yoriume, Yutaka (1979) Application of IPOS technique to MOS ICs. Japanese Journal of Applied Physics, 18. 281 doi:10.7567/jjaps.18s1.281
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are Β© OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: September 11, 2025 07:37:54
Go to top of page