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Okamoto, Kenji, Hamakawa, Yoshihiro (1980) High-Brightness Green-Light-Emitting Thin-Film Electroluminescent Device. Japanese Journal of Applied Physics, 19. 371 doi:10.7567/jjaps.19s1.371

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Reference TypeJournal (article/letter/editorial)
TitleHigh-Brightness Green-Light-Emitting Thin-Film Electroluminescent Device
JournalJapanese Journal of Applied Physics
AuthorsOkamoto, KenjiAuthor
Hamakawa, YoshihiroAuthor
Year1980 (January 1)Volume19
PublisherJapan Society of Applied Physics
DOIdoi:10.7567/jjaps.19s1.371Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14983463Long-form Identifiermindat:1:5:14983463:8
GUID0
Full ReferenceOkamoto, Kenji, Hamakawa, Yoshihiro (1980) High-Brightness Green-Light-Emitting Thin-Film Electroluminescent Device. Japanese Journal of Applied Physics, 19. 371 doi:10.7567/jjaps.19s1.371
Plain TextOkamoto, Kenji, Hamakawa, Yoshihiro (1980) High-Brightness Green-Light-Emitting Thin-Film Electroluminescent Device. Japanese Journal of Applied Physics, 19. 371 doi:10.7567/jjaps.19s1.371
In(1980) Japanese Journal of Applied Physics Vol. 19. Japan Society of Applied Physics

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Suyama, Takahiro, Sawara, Nobuyuki, Okamoto, Kenji, Hamakawa, Yoshihiro (1982) Multi-Coloring of Thin-Film Electroluminescent Device. Japanese Journal of Applied Physics, 21. 383 doi:10.7567/jjaps.21s1.383
Okamoto, Kenji, Nasu, Yasuhiro, Okuyama, Masanori, Hamakawa, Yoshihiro (1981) Low-Threshold-Voltage AC Thin-Film Electroluminescent Device. Japanese Journal of Applied Physics, 20. 215 doi:10.7567/jjaps.20s1.215
Okamoto, Hiroaki, Nitta, Yoshiteru, Hamakawa, Yoshihiro (1980) Design Parameters of a-Si: H High-Voltage Photovoltaic Cells. Japanese Journal of Applied Physics, 19. 545 doi:10.7567/jjaps.19s1.545
Suyama, Takahiro, Okamoto, Kenji, Hamakawa, Yoshihiro (1982) New type of thinā€film electroluminescent device having a multilayer structure. Applied Physics Letters, 41 (5). 462-464 doi:10.1063/1.93532
Nitta, Yoshiteru, Okamoto, Hiroaki, Fujita, Nobuhiko, Hamakawa, Yoshihiro (1980) Amorphous Si: H Heteroface Photovoltaic Cells Based Upon p-i-n Junction Structure. Japanese Journal of Applied Physics, 19. 143 doi:10.7567/jjaps.19s2.143
Matsui, Yasushi, Okuyama, Masanori, Hamakawa, Yoshihiro (1981) Preparation of PbTiO3Ferroelectric Thin Film by Laser Annealing. Japanese Journal of Applied Physics, 20. 23 doi:10.7567/jjaps.20s4.23
Nonomura, Shuichi, Okamoto, Hiroaki, Kida, Hirotsugu, Fukumoto, Kouji, Hamakawa, Yoshihiro (1983) Characterization of Film and Junction Qualities in a-Si Solar Cells. Japanese Journal of Applied Physics, 22. 517 doi:10.7567/jjaps.22s1.517
Hotta, Sadayoshi, Nishimoto, Naoaki, Tawada, Yoshihisa, Okamoto, Hiroaki, Hamakawa, Yoshihiro (1982) Optimization of GD a-Si: H Film Property for Photovoltaic Device by Means of the Cross Field Plasma Deposition Technique. Japanese Journal of Applied Physics, 21. 289 doi:10.7567/jjaps.21s1.289
Takakura, Hideyuki, Choe, Moon-Soek, Hamakawa, Yoshihiro (1980) Paint-on-diffusant SnO2/n+-p Si Heteroface Solar Cell. Japanese Journal of Applied Physics, 19. 61 doi:10.7567/jjaps.19s2.61
Kobayashi, Hiroshi, Tanaka, Shosaku, Sasakura, Hiroshi, Hamakawa, Yoshihiro (1974) Voltage Dependence of Brightness in Rare-Earth Doped Electroluminescent ZnS Thin Film Devices. Japanese Journal of Applied Physics, 13 (2) 264-270 doi:10.1143/jjap.13.264
Kojima, Motohiro, Okuyama, Masanori, Nakagawa, Taichi, Hamakawa, Yoshihiro (1983) Chemical Vapor Deposition of PbTiO3Thin Film. Japanese Journal of Applied Physics, 22. 14 doi:10.7567/jjaps.22s2.14
 
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