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Shiraishi, Hiroyuki, Yamada, Ryuzo, Matsui, Nobuyuki, Umeno, Masayoshi (1987) Low-Threshold AlGaAs/GaAs MQW Laser Diode Fabricated on Si Substrates by MOCVD. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l1012

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Reference TypeJournal (article/letter/editorial)
TitleLow-Threshold AlGaAs/GaAs MQW Laser Diode Fabricated on Si Substrates by MOCVD
JournalJapanese Journal of Applied Physics
AuthorsShiraishi, HiroyukiAuthor
Yamada, RyuzoAuthor
Matsui, NobuyukiAuthor
Umeno, MasayoshiAuthor
Year1987 (June 20)Volume26
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.26.l1012Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14989780Long-form Identifiermindat:1:5:14989780:0
GUID0
Full ReferenceShiraishi, Hiroyuki, Yamada, Ryuzo, Matsui, Nobuyuki, Umeno, Masayoshi (1987) Low-Threshold AlGaAs/GaAs MQW Laser Diode Fabricated on Si Substrates by MOCVD. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l1012
Plain TextShiraishi, Hiroyuki, Yamada, Ryuzo, Matsui, Nobuyuki, Umeno, Masayoshi (1987) Low-Threshold AlGaAs/GaAs MQW Laser Diode Fabricated on Si Substrates by MOCVD. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l1012
In(1987) Japanese Journal of Applied Physics Vol. 26. Japan Society of Applied Physics

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Shiraishi, Hiroyuki, Yamada, Ryuzo, Matsui, Nobuyuki, Umeno, Masayoshi (1987) AlGaAs/GaAs MQW Laser Diode Fabricated on Si Substrates by MOCVD. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l198
Sakai, Shiro, Soga, Tetsuo, Takeyasu, Masanari, Umeno, Masayoshi (1985) AlGaAs/GaAs DH Lasers on Si Substrates Grown Using Super Lattice Buffer Layers by MOCVD. Japanese Journal of Applied Physics, 24. doi:10.1143/jjap.24.l666
Hasegawa, Yoshiaki, Egawa, Takashi, Jimbo, Takashi, Umeno, Masayoshi (1993) Fabrication of Low-Threshold AlGaAs/GaAs Patterned Quantum Well Laser Grown on Si Substrate. Japanese Journal of Applied Physics, 32. doi:10.1143/jjap.32.l997
Soga, Tetsuo, Sakai, Shiro, Umeno, Masayoshi, Hattori, Shuzo (1987) Selective MOCVD Growth of GaAs on Si Substrate with Superlattice Intermediate Layers. Japanese Journal of Applied Physics, 26. 252-255 doi:10.1143/jjap.26.252
Sakai, Shiro, Hu, Xiong Wei, Soga, Tetsuo, Umeno, Masayoshi (1986) GaAlAs/GaAs TJS Lasers on Si Substrates Operating at Room Temperature Fabricated by MOCVD. Japanese Journal of Applied Physics, 25. 1957-1958 doi:10.1143/jjap.25.1957
Soga, Tetsuo, Imori, Toru, Umeno, Masayoshi, Hattori, Shuzo (1987) Stress and Strain of GaAs on Si Grown by MOCVD Using Strained Superlattice Intermediate Layers and a Two-Step Growth Method. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l536
Egawa, Takashi, Kobayashi, Yasufumi, Hayashi, Yasuhiko, Soga, Tetsuo, Jimbo, Takashi, Umeno, Masayoshi (1990) Room-Temperature CW Operation of AlGaAs/GaAs SQW Lasers on Si Substrates by MOCVD Using AlGaAs/AlGaP Intermediate Layers. Japanese Journal of Applied Physics, 29. doi:10.1143/jjap.29.l1133
Furuya, Akira, Makiuchi, Masao, Wada, Osamu, Fujii, Toshio, Nobuhara, Hiroyuki (1987) AlGaAs/GaAs Lateral Current Injection (LCI)-MQW Laser Using Impurity-Induced Disordering. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l134
Kobayashi, Takeshi, Tonouchi, Masayoshi, Sakaguchi, Yoshiyuki, Yamashita, Tsutomu (1987) Epitaxial NbN/MgO/Si(GaAs,InP) Tunneling MIS Schottky Diode Fabricated by Interrupted-Sputtering Method. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l50
Egawa, Takashi, Jimbo, Takashi, Umeno, Masayoshi (1993) Monolithically Integrated AlGaAs/InGaAs Laser Diode, p-n Photodetector and GaAs MESFET Grown on Si Substrate. Japanese Journal of Applied Physics, 32. 650-653 doi:10.1143/jjap.32.650
Naitoh, Masami, Umeno, Masayoshi (1987) MOCVD Growth of InP Using Red-Phosphorus and Hydrogen Plasma. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l1538
 
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