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Furuya, Akira, Makiuchi, Masao, Wada, Osamu, Fujii, Toshio, Nobuhara, Hiroyuki (1987) AlGaAs/GaAs Lateral Current Injection (LCI)-MQW Laser Using Impurity-Induced Disordering. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l134

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Reference TypeJournal (article/letter/editorial)
TitleAlGaAs/GaAs Lateral Current Injection (LCI)-MQW Laser Using Impurity-Induced Disordering
JournalJapanese Journal of Applied Physics
AuthorsFuruya, AkiraAuthor
Makiuchi, MasaoAuthor
Wada, OsamuAuthor
Fujii, ToshioAuthor
Nobuhara, HiroyukiAuthor
Year1987 (February 20)Volume26
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.26.l134Search in ResearchGate
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Mindat Ref. ID14989903Long-form Identifiermindat:1:5:14989903:3
GUID0
Full ReferenceFuruya, Akira, Makiuchi, Masao, Wada, Osamu, Fujii, Toshio, Nobuhara, Hiroyuki (1987) AlGaAs/GaAs Lateral Current Injection (LCI)-MQW Laser Using Impurity-Induced Disordering. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l134
Plain TextFuruya, Akira, Makiuchi, Masao, Wada, Osamu, Fujii, Toshio, Nobuhara, Hiroyuki (1987) AlGaAs/GaAs Lateral Current Injection (LCI)-MQW Laser Using Impurity-Induced Disordering. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l134
In(1987) Japanese Journal of Applied Physics Vol. 26. Japan Society of Applied Physics

See Also

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Furuya, Akira, Wada, Osamu, Takamori, Akira, Hashimoto, Hisao (1987) Arsenic Pressure Dependence of Interdiffusion of AlGaAs/GaAs Interface in Quantum Well. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l926
Shiraishi, Hiroyuki, Yamada, Ryuzo, Matsui, Nobuyuki, Umeno, Masayoshi (1987) AlGaAs/GaAs MQW Laser Diode Fabricated on Si Substrates by MOCVD. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l198
Shiraishi, Hiroyuki, Yamada, Ryuzo, Matsui, Nobuyuki, Umeno, Masayoshi (1987) Low-Threshold AlGaAs/GaAs MQW Laser Diode Fabricated on Si Substrates by MOCVD. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l1012
Uematsu, Masashi, Yanagawa, Fumihiko (1987) Compositional Disordering of Si-Implanted GaAs/AlGaAs Superlattices by Rapid Thermal Annealing. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l1407
Uematsu, Masashi, Yanagawa, Fumihiko (1987) Compositional Disordering of Focused-Si-Implanted GaAs/AlGaAs Superlattices by Rapid Thermal Annealing. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l2101
Tarucha, Seigo, Kobayashi, Hideki, Horikoshi, Yoshiji, Okamoto, Hiroshi (1984) Carrier-Induced Energy-Gap Shrinkage in Current-Injection GaAs/AlGaAs MQW Heterostructures. Japanese Journal of Applied Physics, 23. 874-878 doi:10.1143/jjap.23.874
Itoh, Sanae-Inoue, Itoh, Kimitaka (1987) Impurity Injection using Multiple-Shell Pellet. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l1338
Matsui, Kazunori, Kobayashi, Junji, Fukunaga, Toshiaki, Ishida, Koichi, Nakashima, Hisao (1987) Disordering of Surface Regions in Si-Implanted Superlattices of GaAs/AlGaAs. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l1122
Sakaki, Hiroyuki, Yoshimura, Hisao, Matsusue, Toshio (1987) Carrier Concentration Dependent Absorption Spectra of Modulation Doped n-AlGaAs/GaAs Quantum Wells and Performance Analysis of Optical Modulators and Switches Using Carrier Induced Bleaching (CIB) and Refractive Index Change (CIRIC) Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l1104
Sugahara, Tomonobu, Wada, Osamu, Fujii, Toshio, Hiyamizu, Satoshi, Sakurai, Teruo (1982) Monolithic 1Γ—4 Array of Uniform Radiance AlGaAs-GaAs LED's Grown by Molecular Beam Epitaxy. Japanese Journal of Applied Physics, 21. doi:10.1143/jjap.21.l349
Enatsu, Masao, Shimizu, Masafumi, Mizuki, Toshio, Sugawara, Kazushi, Sakurai, Takeshi (1987) Photoluminescence Study of GaAs Grown Directly on Si Substrates. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l1468
 
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