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Sakaki, Hiroyuki, Yoshimura, Hisao, Matsusue, Toshio (1987) Carrier Concentration Dependent Absorption Spectra of Modulation Doped n-AlGaAs/GaAs Quantum Wells and Performance Analysis of Optical Modulators and Switches Using Carrier Induced Bleaching (CIB) and Refractive Index Change (CIRIC) Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l1104

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Reference TypeJournal (article/letter/editorial)
TitleCarrier Concentration Dependent Absorption Spectra of Modulation Doped n-AlGaAs/GaAs Quantum Wells and Performance Analysis of Optical Modulators and Switches Using Carrier Induced Bleaching (CIB) and Refractive Index Change (CIRIC)
JournalJapanese Journal of Applied Physics
AuthorsSakaki, HiroyukiAuthor
Yoshimura, HisaoAuthor
Matsusue, ToshioAuthor
Year1987 (July 20)Volume26
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.26.l1104Search in ResearchGate
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Mindat Ref. ID14989815Long-form Identifiermindat:1:5:14989815:9
GUID0
Full ReferenceSakaki, Hiroyuki, Yoshimura, Hisao, Matsusue, Toshio (1987) Carrier Concentration Dependent Absorption Spectra of Modulation Doped n-AlGaAs/GaAs Quantum Wells and Performance Analysis of Optical Modulators and Switches Using Carrier Induced Bleaching (CIB) and Refractive Index Change (CIRIC) Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l1104
Plain TextSakaki, Hiroyuki, Yoshimura, Hisao, Matsusue, Toshio (1987) Carrier Concentration Dependent Absorption Spectra of Modulation Doped n-AlGaAs/GaAs Quantum Wells and Performance Analysis of Optical Modulators and Switches Using Carrier Induced Bleaching (CIB) and Refractive Index Change (CIRIC) Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l1104
In(1987) Japanese Journal of Applied Physics Vol. 26. Japan Society of Applied Physics

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Sakaki, Hiroyuki, Kato, Keishi, Yoshimura, Hisao (1990) Optical absorption and carrier‐induced bleaching effect in quantum wire and quantum box structures. Applied Physics Letters, 57 (26). 2800-2802 doi:10.1063/1.103791
Matsusue, Toshio, Sakaki, Hiroyuki (1987) Radiative recombination coefficient of free carriers in GaAs‐AlGaAs quantum wells and its dependence on temperature. Applied Physics Letters, 50 (20). 1429-1431 doi:10.1063/1.97844
Furuya, Akira, Makiuchi, Masao, Wada, Osamu, Fujii, Toshio, Nobuhara, Hiroyuki (1987) AlGaAs/GaAs Lateral Current Injection (LCI)-MQW Laser Using Impurity-Induced Disordering. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l134
Furuya, Akira, Wada, Osamu, Takamori, Akira, Hashimoto, Hisao (1987) Arsenic Pressure Dependence of Interdiffusion of AlGaAs/GaAs Interface in Quantum Well. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l926
Kawazu, Takuya, Sakaki, Hiroyuki (2008) Magnetocapacitance Measurement of Selectively Doped n-AlGaAs/GaAs Heterojunction with InGaAs Quantum Dots. Japanese Journal of Applied Physics, 47 (5) 3763-3765 doi:10.1143/jjap.47.3763
Kawazu, Takuya, Sakaki, Hiroyuki (2010) Temperature Dependence of Magnetocapacitance in n-AlGaAs/GaAs Selectively Doped Heterojunction with InGaAs Quantum Dots. Japanese Journal of Applied Physics, 49 (9) 90205 doi:10.1143/jjap.49.090205
Akiyama, Hidefumi, Matsusue, Toshio, Sakaki, Hiroyuki (1994) Carrier scattering and excitonic effects on electron-hole-pair diffusion in nondoped andp-type-modulation-doped GaAs/AlxGa1−xAs quantum-well structures. Physical Review B, 49 (20) 14523-14530 doi:10.1103/physrevb.49.14523
Sun, Kien Wen, Huang, Chu Long, Chen, Jyong Wun (2005) Effect of Carrier Distribution on Carrier Cooling in GaAs/AlGaAs Quantum Wells. Japanese Journal of Applied Physics, 44 (7) 4799-4804 doi:10.1143/jjap.44.4799
Ishida, K., Nakamura, H., Matsumura, H., Kadoi, T., Inoue, H. (1987) InGaAsP/InP optical switches using carrier induced refractive index change. Applied Physics Letters, 50 (3). 141-142 doi:10.1063/1.97695
Brillouet, Francois, Ishida, Koji, Morita, Tetsuo, Miyauchi, Eizo, Takamori, Takeshi, Nakashima, Hisao (1987) Comparison of Lateral Resolution of Fine Stripes Beryllium and Boron Implanted by Focused Ion Beam in Si-Doped AlGaAs/GaAs Multiquantum Wells. Japanese Journal of Applied Physics, 26. 1320-1323 doi:10.1143/jjap.26.1320
Inoue, Kaoru, Sakaki, Hiroyuki, Yoshino, Junji (1984) MBE Growth and Properties of AlGaAs/GaAs/AlGaAs Selectively-Doped Double-Heterojunction Structures with Very High Conductivity. Japanese Journal of Applied Physics, 23. doi:10.1143/jjap.23.l767
 
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