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Hayafuji, Norio, Kizuki, Hirotaka, Miyashita, Motoharu, Kadoiwa, Kaoru, Nishimura, Takashi, Ogasawara, Nobuyoshi, Kumabe, Hisao, Murotani, Toshio, Tada, Akiharu (1991) Crack Propagation and Mechanical Fracture in GaAs-on-Si. Japanese Journal of Applied Physics, 30. 459-463 doi:10.1143/jjap.30.459

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Reference TypeJournal (article/letter/editorial)
TitleCrack Propagation and Mechanical Fracture in GaAs-on-Si
JournalJapanese Journal of Applied Physics
AuthorsHayafuji, NorioAuthor
Kizuki, HirotakaAuthor
Miyashita, MotoharuAuthor
Kadoiwa, KaoruAuthor
Nishimura, TakashiAuthor
Ogasawara, NobuyoshiAuthor
Kumabe, HisaoAuthor
Murotani, ToshioAuthor
Tada, AkiharuAuthor
Year1991 (March 15)Volume30
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.30.459Search in ResearchGate
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Mindat Ref. ID14996502Long-form Identifiermindat:1:5:14996502:8
GUID0
Full ReferenceHayafuji, Norio, Kizuki, Hirotaka, Miyashita, Motoharu, Kadoiwa, Kaoru, Nishimura, Takashi, Ogasawara, Nobuyoshi, Kumabe, Hisao, Murotani, Toshio, Tada, Akiharu (1991) Crack Propagation and Mechanical Fracture in GaAs-on-Si. Japanese Journal of Applied Physics, 30. 459-463 doi:10.1143/jjap.30.459
Plain TextHayafuji, Norio, Kizuki, Hirotaka, Miyashita, Motoharu, Kadoiwa, Kaoru, Nishimura, Takashi, Ogasawara, Nobuyoshi, Kumabe, Hisao, Murotani, Toshio, Tada, Akiharu (1991) Crack Propagation and Mechanical Fracture in GaAs-on-Si. Japanese Journal of Applied Physics, 30. 459-463 doi:10.1143/jjap.30.459
In(1991) Japanese Journal of Applied Physics Vol. 30. Japan Society of Applied Physics

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Hayafuji, Norio, Miyashita, Motoharu, Nishimura, Takashi, Kadoiwa, Kaoru, Kumabe, Hisao, Murotani, Toshio (1990) Effect of Employing Positions of Thermal Cyclic Annealing and Strained-Layer Superlattice on Defect Reduction in GaAs-on-Si. Japanese Journal of Applied Physics, 29. 2371-2375 doi:10.1143/jjap.29.2371
Nishimura, Takashi, Kadoiwa, Kaoru, Hayafuji, Norio, Murotani, Toshio, Ibuki, Sumiaki (1989) GaAs(001) Epitaxial Layer on SOS Using a Specifically Designed MOCVD System. Japanese Journal of Applied Physics, 28. doi:10.1143/jjap.28.l1696
Hayafuji, Norio, Miyashita, Motoharu, Kumabe, Hisao, Murotani, Toshio (1990) Large scale MOCVD growth of GaAs-on-Si by atomic layer epitaxy using initial buffer layers. Journal of Crystal Growth, 106 (2). 421-425 doi:10.1016/0022-0248(90)90088-3
Nishimura, Takashi, Mizuguchi, Kazuo, Hayafuji, Norio, Murotani, Toshio (1987) Reduction of Dislocation Density in GaAs/Si by Strained-Layer Superlattice of InxGa1-xAs-GaAsyP1-y. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l1141
Nishimura, T., Kadoiwa, K., Hayafuji, N., Miyashita, M., Mitsui, K., Kumabe, H., Murotani, T. (1991) Surface morphology improvement of GaAs-on-Si using a two-reactor MOCVD system and an AlAs/GaAs low temperature buffer layer: an approach to crack-free GaAs-on-Si. Journal of Crystal Growth, 107 (1). 468-472 doi:10.1016/0022-0248(91)90504-x
Nishimura, T., Kadoiwa, K., Miyashita, M., Kumabe, H., Murotani, T. (1991) Crack-free and low dislocation density GaAs-on-Si grown by 2-reactor MOCVD system. Journal of Crystal Growth, 112 (4). 791-796 doi:10.1016/0022-0248(91)90136-s
Kadoiwa, K., Nishimura, T., Hayafuji, N., Miyashita, M., Kizuki, H., Mizuguchi, K. (1991) Study of initial buffer layer in GaAs-on-Si growth. Journal of Crystal Growth, 115 (1). 128-132 doi:10.1016/0022-0248(91)90725-k
Hayafuji, Norio, Kimura, Tatsuya, Yoshida, Naohito, Kaneno, Nobuaki, Tsugami, Mari, Mizuguchi, Kazuo, Murotani, Toshio, Ibuki, Sumiaki (1989) Improvement of InP Crystal Quality on GaAs Substrates by Thermal Cyclic Annealing. Japanese Journal of Applied Physics, 28. doi:10.1143/jjap.28.l1721
Sasaki, Hajime, Morikawa, Hiroaki, Matsuno, Yoshinori, Deguchi, Mikio, Ishihara, Takashi, Kumabe, Hisao, Murotani, Toshio, Mitsui, Shigeru (1994) Light Trapping for Thin-Film Silicon Solar Cells Fabricated on Insulator. Japanese Journal of Applied Physics, 33. 3389-3392 doi:10.1143/jjap.33.3389
Kizuki, Hirotaka, Miyashita, Motoharu, Kajikawa, Yasutomo, Mihashi, Yutaka (1997) Time-Resolved Photoluminescence Study on a Hetero Interface Formed by Direct Regrowth of GaAs on anAl0.3Ga0.7AsSurface Prepared by an In Situ HCl Gas Etching Process. Japanese Journal of Applied Physics, 36. 6290-6294 doi:10.1143/jjap.36.6290
Kizuki, Hirotaka, Hayafuji, Norio, Fujii, Nariaki, Kaneno, Nobuaki, Mihashi, Yutaka, Murotani, Toshio (1993) Selective metalorganic chemical vapor deposition growth of GaAs on AlGaAs combined with in situ HCl gas etching. Journal of Crystal Growth, 134 (1). 35-42 doi:10.1016/0022-0248(93)90006-i
 
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