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Nishimura, Takashi, Mizuguchi, Kazuo, Hayafuji, Norio, Murotani, Toshio (1987) Reduction of Dislocation Density in GaAs/Si by Strained-Layer Superlattice of InxGa1-xAs-GaAsyP1-y. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l1141

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Reference TypeJournal (article/letter/editorial)
TitleReduction of Dislocation Density in GaAs/Si by Strained-Layer Superlattice of InxGa1-xAs-GaAsyP1-y
JournalJapanese Journal of Applied Physics
AuthorsNishimura, TakashiAuthor
Mizuguchi, KazuoAuthor
Hayafuji, NorioAuthor
Murotani, ToshioAuthor
Year1987 (July 20)Volume26
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.26.l1141Search in ResearchGate
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Mindat Ref. ID14989829Long-form Identifiermindat:1:5:14989829:6
GUID0
Full ReferenceNishimura, Takashi, Mizuguchi, Kazuo, Hayafuji, Norio, Murotani, Toshio (1987) Reduction of Dislocation Density in GaAs/Si by Strained-Layer Superlattice of InxGa1-xAs-GaAsyP1-y. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l1141
Plain TextNishimura, Takashi, Mizuguchi, Kazuo, Hayafuji, Norio, Murotani, Toshio (1987) Reduction of Dislocation Density in GaAs/Si by Strained-Layer Superlattice of InxGa1-xAs-GaAsyP1-y. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l1141
In(1987) Japanese Journal of Applied Physics Vol. 26. Japan Society of Applied Physics

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Hayafuji, Norio, Miyashita, Motoharu, Nishimura, Takashi, Kadoiwa, Kaoru, Kumabe, Hisao, Murotani, Toshio (1990) Effect of Employing Positions of Thermal Cyclic Annealing and Strained-Layer Superlattice on Defect Reduction in GaAs-on-Si. Japanese Journal of Applied Physics, 29. 2371-2375 doi:10.1143/jjap.29.2371
Nishimura, Takashi, Kadoiwa, Kaoru, Hayafuji, Norio, Murotani, Toshio, Ibuki, Sumiaki (1989) GaAs(001) Epitaxial Layer on SOS Using a Specifically Designed MOCVD System. Japanese Journal of Applied Physics, 28. doi:10.1143/jjap.28.l1696
Hayafuji, Norio, Kimura, Tatsuya, Yoshida, Naohito, Kaneno, Nobuaki, Tsugami, Mari, Mizuguchi, Kazuo, Murotani, Toshio, Ibuki, Sumiaki (1989) Improvement of InP Crystal Quality on GaAs Substrates by Thermal Cyclic Annealing. Japanese Journal of Applied Physics, 28. doi:10.1143/jjap.28.l1721
Hayafuji, Norio, Kizuki, Hirotaka, Miyashita, Motoharu, Kadoiwa, Kaoru, Nishimura, Takashi, Ogasawara, Nobuyoshi, Kumabe, Hisao, Murotani, Toshio, Tada, Akiharu (1991) Crack Propagation and Mechanical Fracture in GaAs-on-Si. Japanese Journal of Applied Physics, 30. 459-463 doi:10.1143/jjap.30.459
Okamoto, Hiroshi, Watanabe, Yoshio, Kadota, Yoshiaki, Ohmachi, Yoshiro (1987) Dislocation Reduction in GaAs on Si by Thermal Cycles and InGaAs/GaAs Strained-Layer Superlattices. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l1950
Shiraishi, Kenji, Ohno, Takahisa (1990) Valence Band Offsets of the InxGa1-xAs/GaAs Strained-Layer Superlattice. Japanese Journal of Applied Physics, 29. doi:10.1143/jjap.29.l556
Okamoto, Akihiko, Toyoshima, Hideo, Ohata, Keiichi (1987) Strained N–Ga0.7Al0.3As/InxGa1-xAs/GaAs Modulation-Doped Structures. Japanese Journal of Applied Physics, 26. 539-542 doi:10.1143/jjap.26.539
Yamaguchi, Masafumi, Nishioka, Takashi, Sugo, Mitsuru (1989) Analysis of strained‐layer superlattice effects on dislocation density reduction in GaAs on Si substrates. Applied Physics Letters, 54 (1). 24-26 doi:10.1063/1.100819
Nozawa, Kazuhiko, Horikoshi, Yoshiji (1991) Low Threading Dislocation Density GaAs on Si(100) with InGaAs/GaAs Strained-Layer Superlattice Grown by Migration-Enhanced Epitaxy. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l668
Hsu, Wei-Chou, Chang, Shou-Zen, Lin, Wei (1992) A Study of Layer Thickness and Interface Qualities of Strained InxGa1-xAs/GaAs Layers. Japanese Journal of Applied Physics, 31. 26-29 doi:10.1143/jjap.31.26
Maezawa, Koichi, Ito, Hiroshi, Mizutani, Takashi (1987) An AlGaAs/InGaAs/GaAs Strained Channel MISFET. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l74
 
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