Vote for your favorite mineral in #MinCup25! - Sanidine vs. Hematite
It's a pair of often-overlooked classics as potassium feldspar sanidine competes with iron ore hematite.
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Okamoto, Hiroshi, Watanabe, Yoshio, Kadota, Yoshiaki, Ohmachi, Yoshiro (1987) Dislocation Reduction in GaAs on Si by Thermal Cycles and InGaAs/GaAs Strained-Layer Superlattices. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l1950

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleDislocation Reduction in GaAs on Si by Thermal Cycles and InGaAs/GaAs Strained-Layer Superlattices
JournalJapanese Journal of Applied Physics
AuthorsOkamoto, HiroshiAuthor
Watanabe, YoshioAuthor
Kadota, YoshiakiAuthor
Ohmachi, YoshiroAuthor
Year1987 (December 20)Volume26
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.26.l1950Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14990123Long-form Identifiermindat:1:5:14990123:1
GUID0
Full ReferenceOkamoto, Hiroshi, Watanabe, Yoshio, Kadota, Yoshiaki, Ohmachi, Yoshiro (1987) Dislocation Reduction in GaAs on Si by Thermal Cycles and InGaAs/GaAs Strained-Layer Superlattices. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l1950
Plain TextOkamoto, Hiroshi, Watanabe, Yoshio, Kadota, Yoshiaki, Ohmachi, Yoshiro (1987) Dislocation Reduction in GaAs on Si by Thermal Cycles and InGaAs/GaAs Strained-Layer Superlattices. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l1950
In(1987) Japanese Journal of Applied Physics Vol. 26. Japan Society of Applied Physics

See Also

These are possibly similar items as determined by title/reference text matching only.

Watanabe, Yoshio, Kadota, Yoshiaki, Okamoto, Hiroshi, Ohmachi, Yoshiro (1989) Depth-Resolved Cathodoluminescence in GaAs Epilayers Grown on Si Substrates. Japanese Journal of Applied Physics, 28. 16-20 doi:10.1143/jjap.28.16
Watanabe, Yoshio, Kadota, Yoshiaki, Okamoto, Hiroshi, Seki, Masahiro, Ohmachi, Yoshiro (1988) Structural properties of GaAs-on-Si with InGaAs/GaAs strained-layer superlattice. Journal of Crystal Growth, 93 (1). 459-465 doi:10.1016/0022-0248(88)90567-2
Okamoto, Hiroshi, Oh'hara, Takahiko, Kadota, Yoshiaki, Ohmachi, Yoshiro (1990) DLTS Measurement on Electron-Irradiated GaAs-on-Si. Japanese Journal of Applied Physics, 29. 1052-1053 doi:10.1143/jjap.29.1052
Uneta, Makoto, Watanabe, Yoshio, Ohmachi, Yoshiro (1990) Material Quality in GaAs-on-Si Grown by Metalorganic Molecular Beam Epitaxy. Japanese Journal of Applied Physics, 29. doi:10.1143/jjap.29.l649
Nishimura, Takashi, Mizuguchi, Kazuo, Hayafuji, Norio, Murotani, Toshio (1987) Reduction of Dislocation Density in GaAs/Si by Strained-Layer Superlattice of InxGa1-xAs-GaAsyP1-y. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l1141
Fukuda, Yukio, Kadota, Yoshiaki, Ohmachi, Yoshiro (1988) Growth and Characterization of GaAs Layers Grown on Ge/Si Substrates by Metalorganic Chemical Vapor Deposition. Japanese Journal of Applied Physics, 27. 485-488 doi:10.1143/jjap.27.485
Watanabe, Yoshio, Uneta, Makoto, Ohmachi, Yoshiro (1989) Growth of GaAs on Si Substrates by Metalorganic MBE Using Triethylgallium and Arsenic. Japanese Journal of Applied Physics, 28. doi:10.1143/jjap.28.l727
Maezawa, Koichi, Ito, Hiroshi, Mizutani, Takashi (1987) An AlGaAs/InGaAs/GaAs Strained Channel MISFET. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l74
Hashimoto, Akihiro, Kamijoh, Takeshi, Watanabe, Nozomu (1987) Epitaxially Induced Stress in GaAs Layer on V-Grooved Si and GaAs Substrates. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l1128
Takasugi, Hidetoshi, Kawabe, Mitsuo, Bando, Yoshio (1987) Initial Growth and Dislocation Accommodation of GaAs on Si(100) by Molecular Beam Epilaxy. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l584
Uneta, Makoto, Watanabe, Yoshio, Fukuda, Yukio, Ohmachi, Yoshiro (1990) Domain Structures of As-Adsorbed Si(100) Surface and GaAs Overlayer. Japanese Journal of Applied Physics, 29. doi:10.1143/jjap.29.l17
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are Β© OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: September 7, 2025 22:00:26
Go to top of page