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Hashimoto, Akihiro, Kamijoh, Takeshi, Watanabe, Nozomu (1987) Epitaxially Induced Stress in GaAs Layer on V-Grooved Si and GaAs Substrates. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l1128

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Reference TypeJournal (article/letter/editorial)
TitleEpitaxially Induced Stress in GaAs Layer on V-Grooved Si and GaAs Substrates
JournalJapanese Journal of Applied Physics
AuthorsHashimoto, AkihiroAuthor
Kamijoh, TakeshiAuthor
Watanabe, NozomuAuthor
Year1987 (July 20)Volume26
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.26.l1128Search in ResearchGate
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Mindat Ref. ID14989824Long-form Identifiermindat:1:5:14989824:1
GUID0
Full ReferenceHashimoto, Akihiro, Kamijoh, Takeshi, Watanabe, Nozomu (1987) Epitaxially Induced Stress in GaAs Layer on V-Grooved Si and GaAs Substrates. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l1128
Plain TextHashimoto, Akihiro, Kamijoh, Takeshi, Watanabe, Nozomu (1987) Epitaxially Induced Stress in GaAs Layer on V-Grooved Si and GaAs Substrates. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l1128
In(1987) Japanese Journal of Applied Physics Vol. 26. Japan Society of Applied Physics

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Okamoto, Hiroshi, Watanabe, Yoshio, Kadota, Yoshiaki, Ohmachi, Yoshiro (1987) Dislocation Reduction in GaAs on Si by Thermal Cycles and InGaAs/GaAs Strained-Layer Superlattices. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l1950
Enatsu, Masao, Shimizu, Masafumi, Mizuki, Toshio, Sugawara, Kazushi, Sakurai, Takeshi (1987) Photoluminescence Study of GaAs Grown Directly on Si Substrates. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l1468
Ishida, Koichi, Akiyama, Masahiro, Nishi, Seiji (1987) Tetragonal Lattice Distortion and Tensile Stress in GaAs Layers Grown on Si Substrates by MOCVD. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l530
Takamori, Takeshi, Fukunaga, Toshiaki, Nakashima, Hisao (1987) Low-Temperature Photoluminescence of Lightly Si-Doped AlxGa1-xAs on (511) GaAs Substrates Grown by Molecular Beam Epitaxy. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l920
Ishida, Koichi, Akiyama, Masahiro, Nishi, Seiji (1987) Misfit and Threading Dislocations in GaAs Layers Grown on Si Substrates by MOCVD. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l163
Fukunaga, Toshiaki, Hashimoto, Akihiro, Watanabe, Nozomu (1989) Molecular Beam Epitaxial Growth of InxGa1-xAs and InxAl1-xAs on Si Substrates. Japanese Journal of Applied Physics, 28. 1276-1277 doi:10.1143/jjap.28.1276
Shiraishi, Hiroyuki, Yamada, Ryuzo, Matsui, Nobuyuki, Umeno, Masayoshi (1987) AlGaAs/GaAs MQW Laser Diode Fabricated on Si Substrates by MOCVD. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l198
Takamori, Akira, Sugata, Sumio, Asakawa, Kiyoshi, Miyauchi, Eizo, Hashimoto, Hisao (1987) Cleaning of MBE GaAs Substrates by Hydrogen Radical Beam Irradiation. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l142
Massies, Jean, Contour, Jean-Pierre (1987) In SituDeoxidation of GaAs Substrates by HCl Gas. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l38
Hashimoto, Akihiro, Sugiyama, Naoharu, Tamura, Masao (1991) Reduction of Dislocation Density in GaAs on Si Substrate by Si Interlayer and Initial Si Buffer Layer. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l447
Shiraishi, Hiroyuki, Yamada, Ryuzo, Matsui, Nobuyuki, Umeno, Masayoshi (1987) Low-Threshold AlGaAs/GaAs MQW Laser Diode Fabricated on Si Substrates by MOCVD. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l1012
 
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