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Yamaguchi, Masafumi, Nishioka, Takashi, Sugo, Mitsuru (1989) Analysis of strained‐layer superlattice effects on dislocation density reduction in GaAs on Si substrates. Applied Physics Letters, 54 (1). 24-26 doi:10.1063/1.100819

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Reference TypeJournal (article/letter/editorial)
TitleAnalysis of strained‐layer superlattice effects on dislocation density reduction in GaAs on Si substrates
JournalApplied Physics Letters
AuthorsYamaguchi, MasafumiAuthor
Nishioka, TakashiAuthor
Sugo, MitsuruAuthor
Year1989 (January 2)Volume54
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.100819Search in ResearchGate
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Mindat Ref. ID8485802Long-form Identifiermindat:1:5:8485802:1
GUID0
Full ReferenceYamaguchi, Masafumi, Nishioka, Takashi, Sugo, Mitsuru (1989) Analysis of strained‐layer superlattice effects on dislocation density reduction in GaAs on Si substrates. Applied Physics Letters, 54 (1). 24-26 doi:10.1063/1.100819
Plain TextYamaguchi, Masafumi, Nishioka, Takashi, Sugo, Mitsuru (1989) Analysis of strained‐layer superlattice effects on dislocation density reduction in GaAs on Si substrates. Applied Physics Letters, 54 (1). 24-26 doi:10.1063/1.100819
In(1989, January) Applied Physics Letters Vol. 54 (1) AIP Publishing

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Yamaguchi, Masafumi, Sugo, Mitsuru, Itoh, Yoshio (1989) Misfit stress dependence of dislocation density reduction in GaAs films on Si substrates grown by strained‐layer superlattices. Applied Physics Letters, 54 (25). 2568-2570 doi:10.1063/1.101052
Sugo, Mitsuru, Yamaguchi, Masafumi (1989) Buffer layer effects on residual stress in InP on Si substrates. Applied Physics Letters, 54 (18). 1754-1756 doi:10.1063/1.101281
Yamaguchi, Masafumi, Tachikawa, Masami, Sugo, Mitsuru, Kondo, Susumu, Itoh, Yoshio (1990) Analysis for dislocation density reduction in selective area grown GaAs films on Si substrates. Applied Physics Letters, 56 (1). 27-29 doi:10.1063/1.102636
Nishioka, Takashi, Itoh, Yoshio, Sugo, Mitsuru, Yamamoto, Akio, Yamaguchi, Masfumi (1988) Threading Dislocation Density Reduction in GaAs on Si Substrates. Japanese Journal of Applied Physics, 27. doi:10.1143/jjap.27.l2271
Yamaguchi, Masafumi, Yamamoto, Akio, Tachikawa, Masami, Itoh, Yoshio, Sugo, Mitsuru (1988) Defect reduction effects in GaAs on Si substrates by thermal annealing. Applied Physics Letters, 53 (23). 2293-2295 doi:10.1063/1.100257
Sugo, Mitsuru, Uchida, Naoto, Yamamoto, Akio, Nishioka, Takashi, Yamaguchi, Masafumi (1989) Residual strains in heteroepitaxial III‐V semiconductor films on Si(100) substrates. Journal of Applied Physics, 65 (2). 591-595 doi:10.1063/1.343113
Yamaguchi, Masafumi, Tachikawa, Masami, Itoh, Yoshio, Sugo, Mitsuru, Kondo, Susumu (1990) Thermal annealing effects of defect reduction in GaAs on Si substrates. Journal of Applied Physics, 68 (9). 4518-4522 doi:10.1063/1.346156
Tachikawa, Masami, Yamaguchi, Masafumi (1990) Film thickness dependence of dislocation density reduction in GaAs‐on‐Si substrates. Applied Physics Letters, 56 (5). 484-486 doi:10.1063/1.102773
Itoh, Yoshio, Nishioka, Takashi, Yamamoto, Akio, Yamaguchi, Masafumi (1986) 14.5% conversion efficiency GaAs solar cell fabricated on Si substrates. Applied Physics Letters, 49 (23). 1614-1616 doi:10.1063/1.97245
Nishimura, Takashi, Mizuguchi, Kazuo, Hayafuji, Norio, Murotani, Toshio (1987) Reduction of Dislocation Density in GaAs/Si by Strained-Layer Superlattice of InxGa1-xAs-GaAsyP1-y. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l1141
Nishioka, Takashi, Itoh, Yoshio, Yamamoto, Akio, Yamaguchi, Masafumi (1987) Crosshatch patterns in GaAs films on Si substrates due to thermal strain in annealing processes. Applied Physics Letters, 51 (23). 1928-1930 doi:10.1063/1.98303
 
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