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Nishioka, Takashi, Itoh, Yoshio, Yamamoto, Akio, Yamaguchi, Masafumi (1987) Crosshatch patterns in GaAs films on Si substrates due to thermal strain in annealing processes. Applied Physics Letters, 51 (23). 1928-1930 doi:10.1063/1.98303

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Reference TypeJournal (article/letter/editorial)
TitleCrosshatch patterns in GaAs films on Si substrates due to thermal strain in annealing processes
JournalApplied Physics Letters
AuthorsNishioka, TakashiAuthor
Itoh, YoshioAuthor
Yamamoto, AkioAuthor
Yamaguchi, MasafumiAuthor
Year1987 (December 7)Volume51
Issue23
PublisherAIP Publishing
DOIdoi:10.1063/1.98303Search in ResearchGate
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Mindat Ref. ID8481663Long-form Identifiermindat:1:5:8481663:6
GUID0
Full ReferenceNishioka, Takashi, Itoh, Yoshio, Yamamoto, Akio, Yamaguchi, Masafumi (1987) Crosshatch patterns in GaAs films on Si substrates due to thermal strain in annealing processes. Applied Physics Letters, 51 (23). 1928-1930 doi:10.1063/1.98303
Plain TextNishioka, Takashi, Itoh, Yoshio, Yamamoto, Akio, Yamaguchi, Masafumi (1987) Crosshatch patterns in GaAs films on Si substrates due to thermal strain in annealing processes. Applied Physics Letters, 51 (23). 1928-1930 doi:10.1063/1.98303
In(1987, December) Applied Physics Letters Vol. 51 (23) AIP Publishing

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Itoh, Yoshio, Nishioka, Takashi, Yamamoto, Akio, Yamaguchi, Masafumi (1986) 14.5% conversion efficiency GaAs solar cell fabricated on Si substrates. Applied Physics Letters, 49 (23). 1614-1616 doi:10.1063/1.97245
Itoh, Yoshio, Yamaguchi, Masafumi, Nishioka, Takashi, Yamamoto, Akio (1987) Radiation damage of GaAs thin‐film solar cells on Si substrates. Journal of Applied Physics, 61 (2). 762-766 doi:10.1063/1.338229
Yamaguchi, Masafumi, Yamamoto, Akio, Tachikawa, Masami, Itoh, Yoshio, Sugo, Mitsuru (1988) Defect reduction effects in GaAs on Si substrates by thermal annealing. Applied Physics Letters, 53 (23). 2293-2295 doi:10.1063/1.100257
Itoh, Yoshio, Nishioka, Takashi, Yamamoto, Akio, Yamaguchi, Masafumi (1988) GaAs heteroepitaxial growth on Si for solar cells. Applied Physics Letters, 52 (19). 1617-1618 doi:10.1063/1.99058
Nishioka, Takashi, Itoh, Yoshio, Yamamoto, Akio, Yamagichi, Masafumi (1988) Type conversion near thep‐Si substrate surface by growing GaAs on Si substrates. Journal of Applied Physics, 64 (3). 1266-1270 doi:10.1063/1.341844
Nishioka, Takashi, Itoh, Yoshio, Sugo, Mitsuru, Yamamoto, Akio, Yamaguchi, Masfumi (1988) Threading Dislocation Density Reduction in GaAs on Si Substrates. Japanese Journal of Applied Physics, 27. doi:10.1143/jjap.27.l2271
Yamaguchi, Masafumi, Yamamoto, Akio, Itoh, Yoshio (1986) Effect of dislocations on the efficiency of thin‐film GaAs solar cells on Si substrates. Journal of Applied Physics, 59 (5). 1751-1753 doi:10.1063/1.336439
Sugo, Mitsuru, Uchida, Naoto, Yamamoto, Akio, Nishioka, Takashi, Yamaguchi, Masafumi (1989) Residual strains in heteroepitaxial III‐V semiconductor films on Si(100) substrates. Journal of Applied Physics, 65 (2). 591-595 doi:10.1063/1.343113
Yamaguchi, Masafumi, Tachikawa, Masami, Itoh, Yoshio, Sugo, Mitsuru, Kondo, Susumu (1990) Thermal annealing effects of defect reduction in GaAs on Si substrates. Journal of Applied Physics, 68 (9). 4518-4522 doi:10.1063/1.346156
Yamaguchi, Masafumi, Tachikawa, Masami, Sugo, Mitsuru, Kondo, Susumu, Itoh, Yoshio (1990) Analysis for dislocation density reduction in selective area grown GaAs films on Si substrates. Applied Physics Letters, 56 (1). 27-29 doi:10.1063/1.102636
Yamaguchi, Masafumi, Sugo, Mitsuru, Itoh, Yoshio (1989) Misfit stress dependence of dislocation density reduction in GaAs films on Si substrates grown by strained‐layer superlattices. Applied Physics Letters, 54 (25). 2568-2570 doi:10.1063/1.101052
 
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