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Itoh, Yoshio, Nishioka, Takashi, Yamamoto, Akio, Yamaguchi, Masafumi (1988) GaAs heteroepitaxial growth on Si for solar cells. Applied Physics Letters, 52 (19). 1617-1618 doi:10.1063/1.99058

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Reference TypeJournal (article/letter/editorial)
TitleGaAs heteroepitaxial growth on Si for solar cells
JournalApplied Physics Letters
AuthorsItoh, YoshioAuthor
Nishioka, TakashiAuthor
Yamamoto, AkioAuthor
Yamaguchi, MasafumiAuthor
Year1988 (May 9)Volume52
Issue19
PublisherAIP Publishing
DOIdoi:10.1063/1.99058Search in ResearchGate
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Mindat Ref. ID8482962Long-form Identifiermindat:1:5:8482962:1
GUID0
Full ReferenceItoh, Yoshio, Nishioka, Takashi, Yamamoto, Akio, Yamaguchi, Masafumi (1988) GaAs heteroepitaxial growth on Si for solar cells. Applied Physics Letters, 52 (19). 1617-1618 doi:10.1063/1.99058
Plain TextItoh, Yoshio, Nishioka, Takashi, Yamamoto, Akio, Yamaguchi, Masafumi (1988) GaAs heteroepitaxial growth on Si for solar cells. Applied Physics Letters, 52 (19). 1617-1618 doi:10.1063/1.99058
In(1988, May) Applied Physics Letters Vol. 52 (19) AIP Publishing

See Also

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Itoh, Yoshio, Nishioka, Takashi, Yamamoto, Akio, Yamaguchi, Masafumi (1986) 14.5% conversion efficiency GaAs solar cell fabricated on Si substrates. Applied Physics Letters, 49 (23). 1614-1616 doi:10.1063/1.97245
Itoh, Yoshio, Yamaguchi, Masafumi, Nishioka, Takashi, Yamamoto, Akio (1987) Radiation damage of GaAs thin‐film solar cells on Si substrates. Journal of Applied Physics, 61 (2). 762-766 doi:10.1063/1.338229
Nishioka, Takashi, Itoh, Yoshio, Yamamoto, Akio, Yamaguchi, Masafumi (1987) Crosshatch patterns in GaAs films on Si substrates due to thermal strain in annealing processes. Applied Physics Letters, 51 (23). 1928-1930 doi:10.1063/1.98303
Nishioka, Takashi, Itoh, Yoshio, Yamamoto, Akio, Yamagichi, Masafumi (1988) Type conversion near thep‐Si substrate surface by growing GaAs on Si substrates. Journal of Applied Physics, 64 (3). 1266-1270 doi:10.1063/1.341844
Yamaguchi, Masafumi, Yamamoto, Akio, Itoh, Yoshio (1986) Effect of dislocations on the efficiency of thin‐film GaAs solar cells on Si substrates. Journal of Applied Physics, 59 (5). 1751-1753 doi:10.1063/1.336439
Nishioka, Takashi, Itoh, Yoshio, Sugo, Mitsuru, Yamamoto, Akio, Yamaguchi, Masfumi (1988) Threading Dislocation Density Reduction in GaAs on Si Substrates. Japanese Journal of Applied Physics, 27. doi:10.1143/jjap.27.l2271
Yamaguchi, Masafumi, Yamamoto, Akio, Tachikawa, Masami, Itoh, Yoshio, Sugo, Mitsuru (1988) Defect reduction effects in GaAs on Si substrates by thermal annealing. Applied Physics Letters, 53 (23). 2293-2295 doi:10.1063/1.100257
Sugo, Mitsuru, Uchida, Naoto, Yamamoto, Akio, Nishioka, Takashi, Yamaguchi, Masafumi (1989) Residual strains in heteroepitaxial III‐V semiconductor films on Si(100) substrates. Journal of Applied Physics, 65 (2). 591-595 doi:10.1063/1.343113
Yamaguchi, Masafumi, Amano, Chikara, Itoh, Yoshio (1989) Numerical analysis for high‐efficiency GaAs solar cells fabricated on Si substrates. Journal of Applied Physics, 66 (2). 915-919 doi:10.1063/1.343520
Yamaguchi, Masafumi, Itoh, Yoshio (1986) Efficiency considerations for polycrystalline GaAs thin‐film solar cells. Journal of Applied Physics, 60 (1). 413-417 doi:10.1063/1.337665
Yamaguchi, Masafumi, Itoh, Yoshio, Ando, Koushi, Yamamoto, Akio (1986) Room-Temperature Annealing Effects on Radiation-Induced Defects in InP Crystals and Solar Cells. Japanese Journal of Applied Physics, 25. 1650-1656 doi:10.1143/jjap.25.1650
 
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