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(1988, May) Applied Physics Letters Vol. 52 (19) AIP Publishing

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Reference TypeJournal (issue)
JournalApplied Physics Letters
Year1988 (May)Volume52
Issue<   19   >
PublisherAIP Publishing
Mindat Ref. ID8482955Long-form Identifiermindat:1:5:8482955:1
GUID0
Full Reference(1988, May) Applied Physics Letters Vol. 52 (19) AIP Publishing
Plain Text(1988, May) Applied Physics Letters Vol. 52 (19) AIP Publishing
In(n.d.) Applied Physics Letters Vol. 52. AIP Publishing

Contains

Badilescu, S., Ashrit, P. V., Truong, Vo‐Van (1988) Enhanced infrared attenuated‐total‐reflection spectra ofp‐nitrobenzoic acid with Ag films. Applied Physics Letters, 52 (19). 1551-1553 doi:10.1063/1.99078
Rothenhäusler, Benno, Knoll, Wolfgang (1988) Surface plasmon interferometry in the visible. Applied Physics Letters, 52 (19). 1554-1556 doi:10.1063/1.99698
Litzenberger, L., Mandl, A. (1988) Increased XeF(B→X) laser efficiency at high pump rate and elevated temperature. Applied Physics Letters, 52 (19). 1557-1559 doi:10.1063/1.99079
Berger, Josef, Welch, David F., Streifer, William, Scifres, Donald R. (1988) Narrowing the far field of a Y‐junction laser array using a customized spatial filter in an external cavity. Applied Physics Letters, 52 (19). 1560-1562 doi:10.1063/1.99080
Choi, Mun S., Hur, J. H., Gundersen, Martin A. (1988) Optoelectronic bistability in gallium phosphide. Applied Physics Letters, 52 (19). 1563-1565 doi:10.1063/1.99081
Cutolo, Antonello, Benson, Stephen V., Madey, John M. (1988) Real time processing of picosecond and femtosecond laser pulses: Application to free‐electron lasers. Applied Physics Letters, 52 (19). 1566-1568 doi:10.1063/1.99082
Edighoffer, J. A., Neil, G. R., Fornaca, S., Thompson, H. R., Smith, T. I., Schwettman, H. A., Hess, C. E., Frisch, J., Rohatgi, R. (1988) Visible free‐electron‐laser oscillator (constant and tapered wiggler). Applied Physics Letters, 52 (19). 1569-1570 doi:10.1063/1.99083
Khuri‐Yakub, B. T., Reinholdtsen, P. A., Chou, C‐H., Vesecky, J. F., Teague, C. C. (1988) Ultrasonic excitation and detection of capillary waves for the measurement of surface film properties. Applied Physics Letters, 52 (19). 1571-1572 doi:10.1063/1.99084
Wittmer, Marc (1988) Self‐aligned diffusion barrier by nitridation of TiSi2. Applied Physics Letters, 52 (19). 1573-1575 doi:10.1063/1.99701
Kakimoto, Koichi, Hibiya, Taketoshi (1988) Composition dependence of viscosity for molten Ga1−xAsx(0.0≤x≤0.53). Applied Physics Letters, 52 (19). 1576-1577 doi:10.1063/1.99085
Hayes, J. R., England, P., Harbison, J. P. (1988) Quantum interference effects in GaAs/GaAlAs bulk potential barriers. Applied Physics Letters, 52 (19). 1578-1580 doi:10.1063/1.99086
Kurtz, S. R., Dawson, L. R., Zipperian, T. E., Lee, S. R. (1988) Demonstration of an InAsSb strained‐layer superlattice photodiode. Applied Physics Letters, 52 (19). 1581-1583 doi:10.1063/1.99087
Raccah, P. M., Garland, J. W., Buttrill, S. E., Francke, L., Jackson, J. (1988) Electron beam electroreflectance studies of GaAs and CdTe surfaces. Applied Physics Letters, 52 (19). 1584-1586 doi:10.1063/1.99088
Bhattacharya, Enakshi, Mahan, A. H. (1988) Microstructure and the light‐induced metastability in hydrogenated amorphous silicon. Applied Physics Letters, 52 (19). 1587-1589 doi:10.1063/1.99089
Lin, Z. H., Wang, T. Y., Stringfellow, G. B., Taylor, P. C. (1988) Exciton binding energies in GaInAs/InP quantum wells determined by thermally modulated photoluminescence. Applied Physics Letters, 52 (19). 1590-1592 doi:10.1063/1.99090
Morasca, S., Sordo, B., De Bernardi, C., Meliga, M. (1988) Refractive indices of semiconductor films measured by waveguide cutoff spectroscopy. Applied Physics Letters, 52 (19). 1593-1595 doi:10.1063/1.99091
Garcia, J. C., Beye, A. C., Contour, J. P., Neu, G., Massies, J., Barski, A. (1988) Reduced carbon acceptor incorporation in GaAs grown by molecular beam epitaxy using dimer arsenic. Applied Physics Letters, 52 (19). 1596-1598 doi:10.1063/1.99092
Shen, Dingli, Lu, Fen, Zhang, Kaiming, Xie, Xide (1988) Tight‐binding study of the strained monolayer superlattices (Si)1/(Si1−xGex)1(100). Applied Physics Letters, 52 (19). 1599-1601 doi:10.1063/1.99093
Watson, Dan M., Huffman, James E. (1988) Germanium blocked‐impurity‐band far‐infrared detectors. Applied Physics Letters, 52 (19). 1602-1604 doi:10.1063/1.99094
Hull, R., Bean, J. C., Werder, D. J., Leibenguth, R. E. (1988) Insituobservations of misfit dislocation propagation in GexSi1−x/Si(100) heterostructures. Applied Physics Letters, 52 (19). 1605-1607 doi:10.1063/1.99055
Leburton, J. P., Kolodzey, J., Briggs, S. (1988) Bipolar tunneling field‐effect transistor: A three‐terminal negative differential resistance device for high‐speed applications. Applied Physics Letters, 52 (19). 1608-1610 doi:10.1063/1.99056
Tung, R. T., Batstone, J. L. (1988) Control of epitaxial orientation of Si on CoSi2(111). Applied Physics Letters, 52 (19). 1611-1613 doi:10.1063/1.99702
Stapp, R. S., Feller, D. G., Johnson, L. R., Westmark, C. I., Bajaj, J., Vural, K., Newman, P. R., Blazejewski, E. R. (1988) Anomalous behavior of reverse leakage currents in liquid phase epitaxial HgCdTe photodiodes with 10 MeV electron irradiations. Applied Physics Letters, 52 (19). 1614-1616 doi:10.1063/1.99057
Itoh, Yoshio, Nishioka, Takashi, Yamamoto, Akio, Yamaguchi, Masafumi (1988) GaAs heteroepitaxial growth on Si for solar cells. Applied Physics Letters, 52 (19). 1617-1618 doi:10.1063/1.99058
Hadley, P., Beasley, M. R., Wiesenfeld, K. (1988) Phase locking of Josephson junction arrays. Applied Physics Letters, 52 (19). 1619-1621 doi:10.1063/1.99059
Kodas, T. T., Engler, E. M., Lee, V. Y., Jacowitz, R., Baum, T. H., Roche, K., Parkin, S. S. P., Young, W. S., Hughes, S., Kleder, J., Auser, W. (1988) Aerosol flow reactor production of fine Y1Ba2Cu3O7powder: Fabrication of superconducting ceramics. Applied Physics Letters, 52 (19). 1622-1624 doi:10.1063/1.99703
Kwo, J., Hong, M., Fleming, R. M., Hebard, A. F., Mandich, M. L., DeSantolo, A. M., Davidson, B. A., Marsh, P., Hobbins, N. D. (1988) Observation of a halide (F/Cl) stabilized, new perovskite phase in superconducting Y2Ba5Cu7Oxfilms. Applied Physics Letters, 52 (19). 1625-1627 doi:10.1063/1.99704
Jin, S., Sherwood, R. C., Tiefel, T. H., Kammlott, G. W., Fastnacht, R. A., Davis, M. E., Zahurak, S. M. (1988) Superconductivity in the Bi‐Sr‐Ca‐Cu‐O compounds with noble metal additions. Applied Physics Letters, 52 (19). 1628-1630 doi:10.1063/1.99705
Mantese, J. V., Hamdi, A. H., Micheli, A. L., Chen, Y. L., Wong, C. A., Johnson, J. L., Karmarkar, M. M., Padmanabhan, K. R. (1988) Rapid thermal annealing of highTcsuperconducting thin films formed by metalorganic deposition. Applied Physics Letters, 52 (19). 1631-1633 doi:10.1063/1.99706
Harvey, I. K., Binks, R. A., Driver, R. (1988) rf break‐junction SQUID’s at 77 K. Applied Physics Letters, 52 (19). 1634-1635 doi:10.1063/1.99707
Daalderop, G. H. O., Mueller, F. M., Albers, R. C., Boring, A. M. (1988) Prediction of a large polar Kerr angle in NiUSn. Applied Physics Letters, 52 (19). 1636-1638 doi:10.1063/1.99639
Yoshikawa, M., Katagiri, G., Ishida, H., Ishitani, A., Akamatsu, T. (1988) Resonant Raman scattering of diamondlike amorphous carbon films. Applied Physics Letters, 52 (19). 1639-1641 doi:10.1063/1.99060
Chýlek, Petr, Biswas, A., Jarzembski, M. A., Srivastava, V., Pinnick, R. G. (1988) Time delay of stimulated Raman scattering of micron‐size droplets. Applied Physics Letters, 52 (19). 1642-1644 doi:10.1063/1.99708
Yu, Peter Y., Li, Ming‐fu (1988) Comment on ‘‘New evidence of small lattice relaxation for theDXcenter in AlxGa1−xAs’’ [Appl. Phys. Lett.51, 1358 (1987)]. Applied Physics Letters, 52 (19). 1645 doi:10.1063/1.99061

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