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Wittmer, Marc (1988) Self‐aligned diffusion barrier by nitridation of TiSi2. Applied Physics Letters, 52 (19). 1573-1575 doi:10.1063/1.99701

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Reference TypeJournal (article/letter/editorial)
TitleSelf‐aligned diffusion barrier by nitridation of TiSi2
JournalApplied Physics Letters
AuthorsWittmer, MarcAuthor
Year1988 (May 9)Volume52
Issue19
PublisherAIP Publishing
DOIdoi:10.1063/1.99701Search in ResearchGate
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Mindat Ref. ID8483008Long-form Identifiermindat:1:5:8483008:9
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Full ReferenceWittmer, Marc (1988) Self‐aligned diffusion barrier by nitridation of TiSi2. Applied Physics Letters, 52 (19). 1573-1575 doi:10.1063/1.99701
Plain TextWittmer, Marc (1988) Self‐aligned diffusion barrier by nitridation of TiSi2. Applied Physics Letters, 52 (19). 1573-1575 doi:10.1063/1.99701
In(1988, May) Applied Physics Letters Vol. 52 (19) AIP Publishing

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Wittmer, Marc (1988) Dopant Diffusion in Self-Aligned Silicide/Silicon Structures. Journal of the Electrochemical Society, 135. 2049pp. doi:10.1149/1.2096206
Ting, Chung Yu, Wittmer, Marc (1983) Investigation of the Al/TiSi2/Si contact system. Journal of Applied Physics, 54 (2). 937-943 doi:10.1063/1.332018
Zhu, Yan, Zhao, Dengtao, Li, Ruigang, Liu, Jianlin (2006) Self-aligned TiSi2∕Si heteronanocrystal nonvolatile memory. Applied Physics Letters, 88 (10). 103507pp. doi:10.1063/1.2183815
Wittmer, Marc (1980) TiN and TaN as diffusion barriers in metallizations to silicon semiconductor devices. Applied Physics Letters, 36 (6). 456-458 doi:10.1063/1.91505
Kamgar, Avid, Baiocchi, F. A., Emerson, A. B., Sheng, T. T., Vasile, M. J., Haynes, Richard W. (1989) Self‐aligned TiN barrier formation by rapid thermal nitridation of TiSi2in ammonia. Journal of Applied Physics, 66 (6). 2395-2401 doi:10.1063/1.344246
Sinriki, Hiroshi, Komiya, Takayuki, Takeyasu, Nobuyuki, Ohta, Tomohiro (1995) Self-Aligned Rapid Thermal Nitridation ofTiSi2inNH3Ambient as a Diffusion Barrier Layer for Selective CVD-Al Contact Plug Formation. Japanese Journal of Applied Physics, 34. 992-996 doi:10.1143/jjap.34.992
Lee, Chang-Hun, Nishimura, Takamasa, Matsuhashi, Hideki, Yokoyama, Michio, Masu, Kazuya, Tsubouchi, Kazuo (1999) Crystallographic Structures and Parasitic Resistances of Self-Aligned Silicide TiSi2/Self-Aligned Nitrided Barrier Layer/Selective Chemical Vapor Deposited Aluminum in Fully Self-Aligned Metallization Metal Oxide Semiconductor Field-Effect Transistor. Japanese Journal of Applied Physics, 38. 5835-5838 doi:10.1143/jjap.38.5835
Wittmer, Marc (1980) High‐temperature contact structures for silicon semiconductor devices. Applied Physics Letters, 37 (6). 540-542 doi:10.1063/1.91978
Tan, T. Y., Gösele, U. (1988) Mechanisms of doping‐enhanced superlattice disordering and of gallium self‐diffusion in GaAs. Applied Physics Letters, 52 (15). 1240-1242 doi:10.1063/1.99168
Yang, Chan‐lon, Pan, Dee‐Son (1988) Intersubband absorption of silicon‐based quantum wells for infrared imaging. Journal of Applied Physics, 64 (3). 1573-1575 doi:10.1063/1.341788
Koike, J., Wada, M. (2005) Self-forming diffusion barrier layer in Cu–Mn alloy metallization. Applied Physics Letters, 87 (4). 41911pp. doi:10.1063/1.1993759
 
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