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Kurtz, S. R., Dawson, L. R., Zipperian, T. E., Lee, S. R. (1988) Demonstration of an InAsSb strained‐layer superlattice photodiode. Applied Physics Letters, 52 (19). 1581-1583 doi:10.1063/1.99087

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Reference TypeJournal (article/letter/editorial)
TitleDemonstration of an InAsSb strained‐layer superlattice photodiode
JournalApplied Physics Letters
AuthorsKurtz, S. R.Author
Dawson, L. R.Author
Zipperian, T. E.Author
Lee, S. R.Author
Year1988 (May 9)Volume52
Issue19
PublisherAIP Publishing
DOIdoi:10.1063/1.99087Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8482987Long-form Identifiermindat:1:5:8482987:0
GUID0
Full ReferenceKurtz, S. R., Dawson, L. R., Zipperian, T. E., Lee, S. R. (1988) Demonstration of an InAsSb strained‐layer superlattice photodiode. Applied Physics Letters, 52 (19). 1581-1583 doi:10.1063/1.99087
Plain TextKurtz, S. R., Dawson, L. R., Zipperian, T. E., Lee, S. R. (1988) Demonstration of an InAsSb strained‐layer superlattice photodiode. Applied Physics Letters, 52 (19). 1581-1583 doi:10.1063/1.99087
In(1988, May) Applied Physics Letters Vol. 52 (19) AIP Publishing

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Kurtz, S. R., Biefeld, R. M., Dawson, L. R., Fritz, I. J., Zipperian, T. E. (1988) High photoconductive gain in lateral InAsSb strained‐layer superlattice infrared detectors. Applied Physics Letters, 53 (20). 1961-1963 doi:10.1063/1.100336
Bulman, G. E., Myers, D. R., Zipperian, T. E., Dawson, L. R. (1986) Proton isolated In0.2Ga0.8As/GaAs strained‐layer superlattice avalanche photodiode. Applied Physics Letters, 48 (15). 1015-1017 doi:10.1063/1.96621
Kurtz, S. R., Osbourn, G. C., Biefeld, R. M., Dawson, L. R., Stein, H. J. (1988) Extended infrared response of InAsSb strained‐layer superlattices. Applied Physics Letters, 52 (10). 831-833 doi:10.1063/1.99298
Kurtz, S. R., Osbourn, G. C., Biefeld, R. M., Lee, S. R. (1988) Photoluminescence and the band structure of InAsSb strained‐layer superlattices. Applied Physics Letters, 53 (3). 216-218 doi:10.1063/1.100135
Bulman, G. E., Myers, D. R., Zipperian, T. E., Dawson, L. R., Wiczer, J. J., Biefeld, R. M. (1985) Photocurrent multiplication in ion implanted lateral In0.2Ga0.8As/GaAs strained‐layer superlattice photodetectors. Applied Physics Letters, 47 (7). 733-735 doi:10.1063/1.96020
Kurtz, S. R., Allerman, A. A., Biefeld, R. M. (1997) Midinfrared lasers and light-emitting diodes with InAsSb/InAsP strained-layer superlattice active regions. Applied Physics Letters, 70 (24). 3188-3190 doi:10.1063/1.119154
Bulman, G. E., Zipperian, T. E., Dawson, L. R. (1986) Impact ionization coefficients in In0.2Ga0.8As/GaAs strained‐layer superlattices. Applied Physics Letters, 49 (4). 212-214 doi:10.1063/1.97174
Fritz, I. J., Dawson, L. R., Zipperian, T. E. (1983) Electron mobilities in In0.2Ga0.8As/GaAs strained‐layer superlattices. Applied Physics Letters, 43 (9). 846-848 doi:10.1063/1.94523
Myers, D. R., Arnold, G. W., Zipperian, T. E., Dawson, L. R., Biefeld, R. M., Fritz, I. J., Barnes, C. E. (1986) Zinc‐implantation‐disordered (InGa)As/GaAs strained‐layer superlattice diodes. Journal of Applied Physics, 60 (3). 1131-1134 doi:10.1063/1.337356
Gourley, P. L., Wiczer, J. J., Zipperian, T. E., Dawson, L. R. (1986) Diffusion dynamics of holes in InxGa1−xAs/GaAs strained‐layer superlattices. Applied Physics Letters, 49 (2). 100-102 doi:10.1063/1.97398
Arnold, G. W., Picraux, S. T., Peercy, P. S., Myers, D. R., Dawson, L. R. (1984) Structural integrity of ion‐implanted In0.2Ga0.8As/GaAs strained‐layer superlattice. Applied Physics Letters, 45 (4). 382-384 doi:10.1063/1.95228
 
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