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Kurtz, S. R., Biefeld, R. M., Dawson, L. R., Fritz, I. J., Zipperian, T. E. (1988) High photoconductive gain in lateral InAsSb strained‐layer superlattice infrared detectors. Applied Physics Letters, 53 (20). 1961-1963 doi:10.1063/1.100336

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Reference TypeJournal (article/letter/editorial)
TitleHigh photoconductive gain in lateral InAsSb strained‐layer superlattice infrared detectors
JournalApplied Physics Letters
AuthorsKurtz, S. R.Author
Biefeld, R. M.Author
Dawson, L. R.Author
Fritz, I. J.Author
Zipperian, T. E.Author
Year1988 (November 14)Volume53
Issue20
PublisherAIP Publishing
DOIdoi:10.1063/1.100336Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8484804Long-form Identifiermindat:1:5:8484804:2
GUID0
Full ReferenceKurtz, S. R., Biefeld, R. M., Dawson, L. R., Fritz, I. J., Zipperian, T. E. (1988) High photoconductive gain in lateral InAsSb strained‐layer superlattice infrared detectors. Applied Physics Letters, 53 (20). 1961-1963 doi:10.1063/1.100336
Plain TextKurtz, S. R., Biefeld, R. M., Dawson, L. R., Fritz, I. J., Zipperian, T. E. (1988) High photoconductive gain in lateral InAsSb strained‐layer superlattice infrared detectors. Applied Physics Letters, 53 (20). 1961-1963 doi:10.1063/1.100336
In(1988, November) Applied Physics Letters Vol. 53 (20) AIP Publishing

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Kurtz, S. R., Dawson, L. R., Zipperian, T. E., Lee, S. R. (1988) Demonstration of an InAsSb strained‐layer superlattice photodiode. Applied Physics Letters, 52 (19). 1581-1583 doi:10.1063/1.99087
Kurtz, S. R., Osbourn, G. C., Biefeld, R. M., Dawson, L. R., Stein, H. J. (1988) Extended infrared response of InAsSb strained‐layer superlattices. Applied Physics Letters, 52 (10). 831-833 doi:10.1063/1.99298
Bulman, G. E., Myers, D. R., Zipperian, T. E., Dawson, L. R., Wiczer, J. J., Biefeld, R. M. (1985) Photocurrent multiplication in ion implanted lateral In0.2Ga0.8As/GaAs strained‐layer superlattice photodetectors. Applied Physics Letters, 47 (7). 733-735 doi:10.1063/1.96020
Myers, D. R., Arnold, G. W., Zipperian, T. E., Dawson, L. R., Biefeld, R. M., Fritz, I. J., Barnes, C. E. (1986) Zinc‐implantation‐disordered (InGa)As/GaAs strained‐layer superlattice diodes. Journal of Applied Physics, 60 (3). 1131-1134 doi:10.1063/1.337356
Kurtz, S. R., Osbourn, G. C., Biefeld, R. M., Lee, S. R. (1988) Photoluminescence and the band structure of InAsSb strained‐layer superlattices. Applied Physics Letters, 53 (3). 216-218 doi:10.1063/1.100135
Myers, D. R., Biefeld, R. M., Fritz, I. J., Picraux, S. T., Zipperian, T. E. (1984) Be‐implantation doping of GaAsxP1−x/GaP strained‐layer superlattices. Applied Physics Letters, 44 (11). 1052-1054 doi:10.1063/1.94639
Fritz, I. J., Dawson, L. R., Zipperian, T. E. (1983) Electron mobilities in In0.2Ga0.8As/GaAs strained‐layer superlattices. Applied Physics Letters, 43 (9). 846-848 doi:10.1063/1.94523
Kurtz, S. R., Allerman, A. A., Biefeld, R. M. (1997) Midinfrared lasers and light-emitting diodes with InAsSb/InAsP strained-layer superlattice active regions. Applied Physics Letters, 70 (24). 3188-3190 doi:10.1063/1.119154
Fritz, I. J., Dawson, L. R., Drummond, T. J., Schirber, J. E., Biefeld, R. M. (1986) Hall‐effect measurements inp‐type InGaAs/GaAs strained‐layer superlattices. Applied Physics Letters, 48 (2). 139-141 doi:10.1063/1.96976
Bulman, G. E., Myers, D. R., Zipperian, T. E., Dawson, L. R. (1986) Proton isolated In0.2Ga0.8As/GaAs strained‐layer superlattice avalanche photodiode. Applied Physics Letters, 48 (15). 1015-1017 doi:10.1063/1.96621
Kurtz, S. R., Biefeld, R. M., Dawson, L. R., Baucom, K. C., Howard, A. J. (1994) Midwave (4 μm) infrared lasers and light‐emitting diodes with biaxially compressed InAsSb active regions. Applied Physics Letters, 64 (7). 812-814 doi:10.1063/1.111022
 
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