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(1988, November) Applied Physics Letters Vol. 53 (20) AIP Publishing

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Reference TypeJournal (issue)
JournalApplied Physics Letters
Year1988 (November)Volume53
Issue<   20   >
PublisherAIP Publishing
Mindat Ref. ID8484785Long-form Identifiermindat:1:5:8484785:8
GUID0
Full Reference(1988, November) Applied Physics Letters Vol. 53 (20) AIP Publishing
Plain Text(1988, November) Applied Physics Letters Vol. 53 (20) AIP Publishing
In(n.d.) Applied Physics Letters Vol. 53. AIP Publishing

Contains

Arai, K., Imai, H., Hosono, H., Abe, Y., Imagawa, H. (1988) Two‐photon processes in defect formation by excimer lasers in synthetic silica glass. Applied Physics Letters, 53 (20). 1891-1893 doi:10.1063/1.100362
Winful, H. G., Wang, S. S. (1988) Stability of phase locking in coupled semiconductor laser arrays. Applied Physics Letters, 53 (20). 1894-1896 doi:10.1063/1.100363
Lucente, M., Fujimoto, J. G., Carter, G. M. (1988) Spatial and frequency dependence of four‐wave mixing in broad‐area diode lasers. Applied Physics Letters, 53 (20). 1897-1899 doi:10.1063/1.100364
Goldberg, L., Chun, M. K. (1988) Injection locking characteristics of a 1 W broad stripe laser diode. Applied Physics Letters, 53 (20). 1900-1902 doi:10.1063/1.100366
Saito, Y., Nomura, A., Kano, T. (1988) Simultaneous two‐band laser emissions and three primary color outputs in the superradiant mode from dye mixtures. Applied Physics Letters, 53 (20). 1903-1904 doi:10.1063/1.100367
Eisenstein, G., Koren, U., Gnauck, A. H., Tucker, R. S., Koch, T. L., Corvini, P. J., Miller, B. I. (1988) Modulation and spectral properties of semi‐insulating blocked planar buried‐heterostructure distributed feedback lasers. Applied Physics Letters, 53 (20). 1905-1907 doi:10.1063/1.100368
Bourbin, Y., Papuchon, M., Enard, A., Werner, M., Moronvalle, C. (1988) Intrinsically resonant traveling‐wave Y‐fed directional couplers at high frequency. Applied Physics Letters, 53 (20). 1908-1910 doi:10.1063/1.100486
Wang, Changbiao (1988) Free‐electron cyclotron resonance lasers. Applied Physics Letters, 53 (20). 1911-1913 doi:10.1063/1.100342
Pelletier, J., Arnal, Y., Joubert, O. (1988) Etching mechanisms of polymers in oxygen microwave multipolar plasmas. Applied Physics Letters, 53 (20). 1914-1916 doi:10.1063/1.100343
Richardson, W. B., Mulvaney, B. J. (1988) Plateau and kink in P profiles diffused into Si: A result of strong bimolecular recombination?. Applied Physics Letters, 53 (20). 1917-1919 doi:10.1063/1.100344
Vandenberg, J. M., Panish, M. B., Temkin, H., Hamm, R. A. (1988) Intrinsic strain at lattice‐matched Ga0.47In0.53As/InP interfaces as studied with high‐resolution x‐ray diffraction. Applied Physics Letters, 53 (20). 1920-1922 doi:10.1063/1.100345
Stützler, F. J., Fujieda, S., Mizuta, M., Ishida, K. (1988) Direct observation of extended monolayer flat islands at metalorganic vapor phase epitaxy grown Al0.5Ga0.5As‐GaAs single quantum well interfaces. Applied Physics Letters, 53 (20). 1923-1925 doi:10.1063/1.100346
Ishikawa, Tomonori, Maeda, Takeshi, Kondo, Kazuo (1988) Selectively Se‐doped AlGaAs/GaAs heterostructures with reducedDXcenter concentrations grown by molecular beam epitaxy. Applied Physics Letters, 53 (20). 1926-1927 doi:10.1063/1.100347
Quat, Vu Thuong, Eichhammer, W., Siffert, P. (1988) Electron diffusion length in rapid thermal processedp‐type silicon. Applied Physics Letters, 53 (20). 1928-1930 doi:10.1063/1.100348
Bandara, K. M. S. V., Coon, D. D., O, Byungsung, Lin, Y. F., Francombe, M. H. (1988) Exchange interactions in quantum well subbands. Applied Physics Letters, 53 (20). 1931-1933 doi:10.1063/1.100327
Olsen, J. E., Shimura, F. (1988) Infrared spectroscopy of thin silicon dioxide on silicon. Applied Physics Letters, 53 (20). 1934-1936 doi:10.1063/1.100487
Hillmer, H., Hansmann, S., Forchel, A., Morohashi, M., Lopez, E., Meier, H. P., Ploog, K. (1988) Two‐dimensional exciton transport in GaAs/GaAlAs quantum wells. Applied Physics Letters, 53 (20). 1937-1939 doi:10.1063/1.100328
Tin, C. C., Barnes, P. A., Neely, W. C. (1988) Thermal and electric field induced defects in InP metal‐insulator‐semiconductor structures. Applied Physics Letters, 53 (20). 1940-1942 doi:10.1063/1.100329
Kanicki, Jerzy (1988) Contact resistance to undoped and phosphorus‐doped hydrogenated amorphous silicon films. Applied Physics Letters, 53 (20). 1943-1945 doi:10.1063/1.100330
Seo, K., Heiblum, M., Knoedler, C. M., Hong, W‐P., Bhattacharya, P. (1988) Pseudomorphic InGaAs base ballistic hot‐electron device. Applied Physics Letters, 53 (20). 1946-1948 doi:10.1063/1.100331
Balberg, I., Delahoy, A. E., Weakliem, H. A. (1988) Ambipolar diffusion length measurements on hydrogenated amorphous siliconp‐i‐nstructures. Applied Physics Letters, 53 (20). 1949-1951 doi:10.1063/1.100332
Puechner, R. A., Johnson, D. A., Maracas, G. N. (1988) Trends of deep level electron traps in AlxGa1−xAs grown by molecular beam epitaxy. Applied Physics Letters, 53 (20). 1952-1954 doi:10.1063/1.100333
Li, Yu‐Lin, Zhang, Zhuang‐Jian, Zheng, Qi‐Ke, Jin, Zhong‐Kao, Wu, Zhen‐Kai, Qin, Qi‐Zong (1988) Molecular beam study of laser‐induced chemical etching of Si(111) by chlorine molecules. Applied Physics Letters, 53 (20). 1955-1957 doi:10.1063/1.100334
Nojima, S., Wakita, K. (1988) Optimization of quantum well materials and structures for excitonic electroabsorption effects. Applied Physics Letters, 53 (20). 1958-1960 doi:10.1063/1.100335
Kurtz, S. R., Biefeld, R. M., Dawson, L. R., Fritz, I. J., Zipperian, T. E. (1988) High photoconductive gain in lateral InAsSb strained‐layer superlattice infrared detectors. Applied Physics Letters, 53 (20). 1961-1963 doi:10.1063/1.100336
Cheeks, T. L., Roukes, M. L., Scherer, A., Craighead, H. G. (1988) Narrow conducting channels defined by helium ion beam damage. Applied Physics Letters, 53 (20). 1964-1966 doi:10.1063/1.100337
Miura, S., Yoshitake, T., Matsubara, S., Miyasaka, Y., Shohata, N., Satoh, T. (1988) Epitaxial Y‐Ba‐Cu‐O films on Si with intermediate layer by rf magnetron sputtering. Applied Physics Letters, 53 (20). 1967-1969 doi:10.1063/1.100488
Lindberg, P. A. P., Soukiassian, P., Shen, Z.‐X., Eom, C. B., Lindau, I., Spicer, W. E., Geballe, T. H. (1988) Electronic structure of ceramics and thin‐film samples of highTcBi2Sr2CaCu2O8+δsuperconductors: Effects of Ar+sputtering, O2exposure, and Rb deposition. Applied Physics Letters, 53 (20). 1970-1972 doi:10.1063/1.100672
Berkley, D. D., Johnson, B. R., Anand, N., Beauchamp, K. M., Conroy, L. E., Goldman, A. M., Maps, J., Mauersberger, K., Mecartney, M. L., Morton, J., Tuominen, M., Zhang, Y‐J. (1988) Insituformation of superconducting YBa2Cu3O7−xthin films using pure ozone vapor oxidation. Applied Physics Letters, 53 (20). 1973-1975 doi:10.1063/1.100489
Chang, Chin‐An, Tsai, Julie A. (1988) Comparison of water degradation of YBaCuO superconducting films made from different structures. Applied Physics Letters, 53 (20). 1976-1978 doi:10.1063/1.100490
Orth, T., Netzelmann, U., Pelzl, J. (1988) Thermal wave imaging by photothermally modulated ferromagnetic resonance. Applied Physics Letters, 53 (20). 1979-1981 doi:10.1063/1.100338
Zhang, Chao, Tzoar, Narkis (1988) Quantum interference in time‐dependent tunneling. Applied Physics Letters, 53 (20). 1982-1984 doi:10.1063/1.100339
Winnick, J., Lessner, P. M., McLarnon, F., Cairns, E. J. (1988) Solution processes in photoelectrochemical cells. Applied Physics Letters, 53 (20). 1985-1987 doi:10.1063/1.100340
Kania, D. R., Lane, S. M., Prussin, S. G. (1988) Measurement of single 14 MeV neutron bursts with 100 ps time resolution. Applied Physics Letters, 53 (20). 1988-1989 doi:10.1063/1.100341

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