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Kanicki, Jerzy (1988) Contact resistance to undoped and phosphorus‐doped hydrogenated amorphous silicon films. Applied Physics Letters, 53 (20). 1943-1945 doi:10.1063/1.100330

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Reference TypeJournal (article/letter/editorial)
TitleContact resistance to undoped and phosphorus‐doped hydrogenated amorphous silicon films
JournalApplied Physics Letters
AuthorsKanicki, JerzyAuthor
Year1988 (November 14)Volume53
Issue20
PublisherAIP Publishing
DOIdoi:10.1063/1.100330Search in ResearchGate
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Mindat Ref. ID8484792Long-form Identifiermindat:1:5:8484792:8
GUID0
Full ReferenceKanicki, Jerzy (1988) Contact resistance to undoped and phosphorus‐doped hydrogenated amorphous silicon films. Applied Physics Letters, 53 (20). 1943-1945 doi:10.1063/1.100330
Plain TextKanicki, Jerzy (1988) Contact resistance to undoped and phosphorus‐doped hydrogenated amorphous silicon films. Applied Physics Letters, 53 (20). 1943-1945 doi:10.1063/1.100330
In(1988, November) Applied Physics Letters Vol. 53 (20) AIP Publishing

See Also

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Lustig, Naftali, Kanicki, Jerzy (1989) Gate dielectric and contact effects in hydrogenated amorphous silicon‐silicon nitride thin‐film transistors. Journal of Applied Physics, 65 (10). 3951-3957 doi:10.1063/1.343361
Li, Tong, Kanicki, Jerzy (1998) Observation of incident angle dependent phonon absorption in hydrogenated amorphous silicon nitride thin films. Applied Physics Letters, 73 (26). 3866-3868 doi:10.1063/1.122919
Banerjee, Ratnabali, Furui, Tatsuya, Okushi, Hideyo, Tanaka, Kazunobu (1988) Thermally and light‐induced instabilities in phosphorus‐doped hydrogenated amorphous silicon. Applied Physics Letters, 53 (19). 1829-1831 doi:10.1063/1.100389
Xu, Xixiang, Morimoto, Akiharu, Kumeda, Minoru, Shimizu, Tatsuo (1988) Thermal equilibrium process in undoped hydrogenated amorphous silicon and silicon‐carbon alloy films. Applied Physics Letters, 52 (8). 622-624 doi:10.1063/1.99384
Cabarrocas, Pere Roca i (1994) Deposition of intrinsic, phosphorus‐doped, and boron‐doped hydrogenated amorphous silicon films at 50 °C. Applied Physics Letters, 65 (13). 1674-1676 doi:10.1063/1.112882
Gelatos, A. V., Mahavadi, K. K., Cohen, J. D., Harbison, J. P. (1988) Transient photocapacitance and photocurrent studies of undoped hydrogenated amorphous silicon. Applied Physics Letters, 53 (5). 403-405 doi:10.1063/1.99892
Eser, E., Urbanski, E. (1988) Response to ‘‘Comment on ‘Photodegradation in hydrogenated amorphous silicon films at a high level of illumination’ ’’ [Appl. Phys. Lett.53, 1768 (1988)]. Applied Physics Letters, 53 (18). 1769 doi:10.1063/1.99778
Park, Jin‐Seok, Han, Min‐Koo, Lee, Chung‐Han (1988) Light‐induced effects on doped‐ and undoped‐hydrogenated amorphous silicon. Journal of Applied Physics, 64 (4). 2107-2112 doi:10.1063/1.341720
Chiang, Chun-sung, Chen, Chun-ying, Kanicki, Jerzy, Takechi, Kazushige (1998) Investigation of intrinsic channel characteristics of hydrogenated amorphous silicon thin-film transistors by gated-four-probe structure. Applied Physics Letters, 72 (22). 2874-2876 doi:10.1063/1.121484
Chen, Yang‐Fang (1988) Elimination of light‐induced effect in hydrogenated amorphous silicon. Applied Physics Letters, 53 (14). 1277-1278 doi:10.1063/1.100404
Krick, David T., Lenahan, P. M., Kanicki, J. (1987) Stable photoinduced paramagnetic defects in hydrogenated amorphous silicon nitride. Applied Physics Letters, 51 (8). 608-610 doi:10.1063/1.98362
 
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