| Reference Type | Journal (article/letter/editorial) |
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| Title | Investigation of intrinsic channel characteristics of hydrogenated amorphous silicon thin-film transistors by gated-four-probe structure |
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| Journal | Applied Physics Letters |
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| Authors | Chiang, Chun-sung | Author |
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| Chen, Chun-ying | Author |
| Kanicki, Jerzy | Author |
| Takechi, Kazushige | Author |
| Year | 1998 (June) | Volume | 72 |
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| Issue | 22 |
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| Publisher | AIP Publishing |
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| DOI | doi:10.1063/1.121484Search in ResearchGate |
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| Generate Citation Formats |
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| Mindat Ref. ID | 8521211 | Long-form Identifier | mindat:1:5:8521211:0 |
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|
| GUID | 0 |
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| Full Reference | Chiang, Chun-sung, Chen, Chun-ying, Kanicki, Jerzy, Takechi, Kazushige (1998) Investigation of intrinsic channel characteristics of hydrogenated amorphous silicon thin-film transistors by gated-four-probe structure. Applied Physics Letters, 72 (22). 2874-2876 doi:10.1063/1.121484 |
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| Plain Text | Chiang, Chun-sung, Chen, Chun-ying, Kanicki, Jerzy, Takechi, Kazushige (1998) Investigation of intrinsic channel characteristics of hydrogenated amorphous silicon thin-film transistors by gated-four-probe structure. Applied Physics Letters, 72 (22). 2874-2876 doi:10.1063/1.121484 |
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| In | (1998, June) Applied Physics Letters Vol. 72 (22) AIP Publishing |
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