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Takechi, Kazushige, Hirano, Naoto, Hayama, Hiroshi, Kaneko, Setsuo (1998) Back-channel-oxidized a-Si:H thin-film transistors. Journal of Applied Physics, 84 (7). 3993-3999 doi:10.1063/1.368579

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Reference TypeJournal (article/letter/editorial)
TitleBack-channel-oxidized a-Si:H thin-film transistors
JournalJournal of Applied Physics
AuthorsTakechi, KazushigeAuthor
Hirano, NaotoAuthor
Hayama, HiroshiAuthor
Kaneko, SetsuoAuthor
Year1998 (October)Volume84
Issue7
PublisherAIP Publishing
DOIdoi:10.1063/1.368579Search in ResearchGate
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Mindat Ref. ID5093669Long-form Identifiermindat:1:5:5093669:8
GUID0
Full ReferenceTakechi, Kazushige, Hirano, Naoto, Hayama, Hiroshi, Kaneko, Setsuo (1998) Back-channel-oxidized a-Si:H thin-film transistors. Journal of Applied Physics, 84 (7). 3993-3999 doi:10.1063/1.368579
Plain TextTakechi, Kazushige, Hirano, Naoto, Hayama, Hiroshi, Kaneko, Setsuo (1998) Back-channel-oxidized a-Si:H thin-film transistors. Journal of Applied Physics, 84 (7). 3993-3999 doi:10.1063/1.368579
In(1998, October) Journal of Applied Physics Vol. 84 (7) AIP Publishing

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Uchida, Hiroyuki, Takechi, Kazushige, Nishida, Shinichi, Kaneko, Setsuo (1991) High-Mobility and High-Stability a-Si:H Thin Film Transistors with Smooth SiNx/a-Si Interface. Japanese Journal of Applied Physics, 30. 3691-3694 doi:10.1143/jjap.30.3691
Takechi, Kazushige, Takagi, Tomoko, Kaneko, Setsuo (1997) Performance of a-Si:H Thin Film Transistors Fabricated by Very High Frequency Discharge Silane Plasma Chemical Vapor Deposition. Japanese Journal of Applied Physics, 36. 6269-6275 doi:10.1143/jjap.36.6269
Takechi, Kazushige, Nakata, Mitsuru, Kanoh, Hiroshi, Otsuki, Shigeyoshi, Kaneko, Setsuo (2006) Quasi-Static Capacitance–Voltage Characteristics of Polycrystalline Silicon Thin-Film Transistors. Japanese Journal of Applied Physics, 45 (9) 6905-6907 doi:10.1143/jjap.45.6905
Takechi, Kazushige, Nakata, Mitsuru, Yamaguchi, Shinya, Tanabe, Hiroshi, Kaneko, Setsuo (2010) Amorphous In–Sn–Si–O Thin-Film Transistors Having Various Si Compositional Ratios. Japanese Journal of Applied Physics, 49 (2) 28002 doi:10.1143/jjap.49.028002
Takechi, Kazushige, Nakata, Mitsuru, Eguchi, Toshimasa, Yamaguchi, Hirotaka, Kaneko, Setsuo (2009) Temperature-Dependent Transfer Characteristics of Amorphous InGaZnO4Thin-Film Transistors. Japanese Journal of Applied Physics, 48 (1) 11301 doi:10.1143/jjap.48.011301
Takechi, Kazushige, Nakata, Mitsuru, Eguchi, Toshimasa, Yamaguchi, Hirotaka, Kaneko, Setsuo (2009) Application of the Meyer–Neldel Rule to the Subthreshold Characteristics of Amorphous InGaZnO4Thin-Film Transistors. Japanese Journal of Applied Physics, 48 (7) 78001 doi:10.1143/jjap.48.078001
Nakata, Mitsuru, Takechi, Kazushige, Eguchi, Toshimasa, Tokumitsu, Eisuke, Yamaguchi, Hirotaka, Kaneko, Setsuo (2009) Effects of Thermal Annealing on ZnO Thin-Film Transistor Characteristics and the Application of Excimer Laser Annealing in Plastic-Based ZnO Thin-Film Transistors. Japanese Journal of Applied Physics, 48 (8) 81608 doi:10.1143/jjap.48.081608
Nakata, Mitsuru, Takechi, Kazushige, Eguchi, Toshimasa, Tokumitsu, Eisuke, Yamaguchi, Hirotaka, Kaneko, Setsuo (2009) Flexible High-Performance Amorphous InGaZnO4Thin-Film Transistors Utilizing Excimer Laser Annealing. Japanese Journal of Applied Physics, 48 (8) 81607 doi:10.1143/jjap.48.081607
Takechi, Kazushige, Nakata, Mitsuru, Eguchi, Toshimasa, Otsuki, Shigeyoshi, Yamaguchi, Hirotaka, Kaneko, Setsuo (2008) Effect of Zinc Oxide Film Deposition Position on the Characteristics of Zinc Oxide Thin Film Transistors Fabricated by Low-Temperature Magnetron Sputtering. Japanese Journal of Applied Physics, 47 (9) 7122-7124 doi:10.1143/jjap.47.7122
Chiang, Chun-sung, Chen, Chun-ying, Kanicki, Jerzy, Takechi, Kazushige (1998) Investigation of intrinsic channel characteristics of hydrogenated amorphous silicon thin-film transistors by gated-four-probe structure. Applied Physics Letters, 72 (22). 2874-2876 doi:10.1063/1.121484
Takechi, Kazushige, Nakata, Mitsuru, Eguchi, Toshimasa, Yamaguchi, Hirotaka, Kaneko, Setsuo (2009) Comparison of Ultraviolet Photo-Field Effects between Hydrogenated Amorphous Silicon and Amorphous InGaZnO4Thin-Film Transistors. Japanese Journal of Applied Physics, 48 (1) 10203 doi:10.1143/jjap.48.010203
 
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