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Quat, Vu Thuong, Eichhammer, W., Siffert, P. (1988) Electron diffusion length in rapid thermal processedp‐type silicon. Applied Physics Letters, 53 (20). 1928-1930 doi:10.1063/1.100348

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Reference TypeJournal (article/letter/editorial)
TitleElectron diffusion length in rapid thermal processedp‐type silicon
JournalApplied Physics Letters
AuthorsQuat, Vu ThuongAuthor
Eichhammer, W.Author
Siffert, P.Author
Year1988 (November 14)Volume53
Issue20
PublisherAIP Publishing
DOIdoi:10.1063/1.100348Search in ResearchGate
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Mindat Ref. ID8484828Long-form Identifiermindat:1:5:8484828:2
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Full ReferenceQuat, Vu Thuong, Eichhammer, W., Siffert, P. (1988) Electron diffusion length in rapid thermal processedp‐type silicon. Applied Physics Letters, 53 (20). 1928-1930 doi:10.1063/1.100348
Plain TextQuat, Vu Thuong, Eichhammer, W., Siffert, P. (1988) Electron diffusion length in rapid thermal processedp‐type silicon. Applied Physics Letters, 53 (20). 1928-1930 doi:10.1063/1.100348
In(1988, November) Applied Physics Letters Vol. 53 (20) AIP Publishing

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Thuong‐Quat, Vu, Eichhammer, W., Siffert, P. (1989) Inhomogeneous defect activation by rapid thermal processes in silicon. Applied Physics Letters, 54 (13). 1235-1237 doi:10.1063/1.100726
Eichhammer, W., Vu‐Thuong‐Quat, , Siffert, P. (1989) On the origin of rapid thermal process induced recombination centers in silicon. Journal of Applied Physics, 66 (8). 3857-3865 doi:10.1063/1.344050
Hartiti, B., Vu‐Thuong‐Quat, , Eichhammer, W., Muller, J.‐C., Siffert, P. (1989) Gettering of gold by rapid thermal processing. Applied Physics Letters, 55 (9). 873-875 doi:10.1063/1.101626
Hartiti, B., Slaoui, A., Muller, J. C., Siffert, P. (1993) Large diffusion length enhancement in silicon by rapid thermal codiffusion of phosphorus and aluminum. Applied Physics Letters, 63 (9). 1249-1251 doi:10.1063/1.109786
Quat, Vu Thuong, Nicolet, Marc‐A. (1972) Electron Trapping in Neutron‐Irradiated Silicon Studied by Space‐Charge‐Limited Current. Journal of Applied Physics, 43 (6). 2755-2762 doi:10.1063/1.1661589
Hartiti, B., Slaoui, A., Loghmarti, M., Muller, J. C., Siffert, P. (1991) Bulk diffusion length improvement by rapid thermal gettering. Applied Physics Letters, 59 (26). 3446-3448 doi:10.1063/1.105673
Barhdadi, A., Amzil, H., M'Gafad, N., Biaz, T., Eichhammer, W., Muller, J.C., Siffert, P. (1992) Effects of conventional and rapid thermal annealing on minority carrier diffusion length in float zone and Czochralski silicon crystals. Journal of Alloys and Compounds, 188. 221-224 doi:10.1016/0925-8388(92)90680-8
Adekoya, W. O., Hage‐Ali, M., Muller, J. C., Siffert, P. (1988) Dose effects during solid phase epitaxial regrowth of boron‐implanted, germanium‐amorphized silicon induced by rapid thermal annealing. Applied Physics Letters, 53 (6). 511-513 doi:10.1063/1.99882
Adekoya, W. O., Muller, J. C., Siffert, P. (1986) Annealing kinetics during rapid and classical thermal processing of a laser induced defect inn‐type silicon. Applied Physics Letters, 49 (21). 1429-1431 doi:10.1063/1.97344
Slaoui, A., Fogarassy, E., White, C. W., Siffert, P. (1988) Infrared characterization of UV laser‐induced silicon oxide films. Applied Physics Letters, 53 (19). 1832-1834 doi:10.1063/1.100482
Fogarassy, E., White, C. W., Slaoui, A., Fuchs, C., Siffert, P., Pennycook, S. J. (1988) Excimer laser induced oxidation of ion‐implanted silicon. Applied Physics Letters, 53 (18). 1720-1722 doi:10.1063/1.99805
 
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