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Fogarassy, E., White, C. W., Slaoui, A., Fuchs, C., Siffert, P., Pennycook, S. J. (1988) Excimer laser induced oxidation of ion‐implanted silicon. Applied Physics Letters, 53 (18). 1720-1722 doi:10.1063/1.99805

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Reference TypeJournal (article/letter/editorial)
TitleExcimer laser induced oxidation of ion‐implanted silicon
JournalApplied Physics Letters
AuthorsFogarassy, E.Author
White, C. W.Author
Slaoui, A.Author
Fuchs, C.Author
Siffert, P.Author
Pennycook, S. J.Author
Year1988 (October 31)Volume53
Issue18
PublisherAIP Publishing
DOIdoi:10.1063/1.99805Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8484633Long-form Identifiermindat:1:5:8484633:6
GUID0
Full ReferenceFogarassy, E., White, C. W., Slaoui, A., Fuchs, C., Siffert, P., Pennycook, S. J. (1988) Excimer laser induced oxidation of ion‐implanted silicon. Applied Physics Letters, 53 (18). 1720-1722 doi:10.1063/1.99805
Plain TextFogarassy, E., White, C. W., Slaoui, A., Fuchs, C., Siffert, P., Pennycook, S. J. (1988) Excimer laser induced oxidation of ion‐implanted silicon. Applied Physics Letters, 53 (18). 1720-1722 doi:10.1063/1.99805
In(1988, October) Applied Physics Letters Vol. 53 (18) AIP Publishing

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Slaoui, A., Fogarassy, E., White, C. W., Siffert, P. (1988) Infrared characterization of UV laser‐induced silicon oxide films. Applied Physics Letters, 53 (19). 1832-1834 doi:10.1063/1.100482
Slaoui, A., Fogarassy, E., Fuchs, C., Siffert, P. (1992) Properties of silicon dioxide films prepared by pulsed‐laser ablation. Journal of Applied Physics, 71 (2). 590-596 doi:10.1063/1.350411
Fogarassy, E., Slaoui, A., Fuchs, C., Regolini, J. L. (1987) Rapid thermal oxidation of silicon monoxide. Applied Physics Letters, 51 (5). 337-339 doi:10.1063/1.98433
Fogarassy, E., Fuchs, C., Slaoui, A., Stoquert, J. P. (1990) SiO2thin‐film deposition by excimer laser ablation from SiO target in oxygen atmosphere. Applied Physics Letters, 57 (7). 664-666 doi:10.1063/1.104253
Fogarassy, E., Fuchs, C., Slaoui, A., de Unamuno, S., Stoquert, J. P., Marine, W., Lang, B. (1994) Low‐temperature synthesis of silicon oxide, oxynitride, and nitride films by pulsed excimer laser ablation. Journal of Applied Physics, 76 (5). 2612-2620 doi:10.1063/1.357557
Fogarassy, E., Fuchs, C., De Unamuno, S., Siffert, P. (1989) Excimer laser induced melting of heavily doped silicon: A contribution to the optimization of the laser doping process. Applied Surface Science, 43. 316-320 doi:10.1016/0169-4332(89)90232-8
Slaoui, A., Foulon, F., Siffert, P. (1990) Excimer laser induced doping of phosphorus into silicon. Journal of Applied Physics, 67 (10). 6197-6201 doi:10.1063/1.345186
Foulon, F., Slaoui, A., Fogarassy, E., Stuck, R., Fuchs, C., Siffert, P. (1989) Optimazation of the parameters involved in the photochemical doping of Si with a pulsed ArF excimer laser. Applied Surface Science, 36. 384-393 doi:10.1016/0169-4332(89)90933-1
Hartiti, B., Slaoui, A., Muller, J. C., Siffert, P. (1989) Electrically active defects in silicon after excimer laser processing. Journal of Applied Physics, 66 (8). 3934-3937 doi:10.1063/1.344021
Narayan, J., Holland, O. W., White, C. W., Young, R. T. (1984) Excimer laser annealing of ion‐implanted silicon. Journal of Applied Physics, 55 (4). 1125-1130 doi:10.1063/1.333204
Stuck, R., Fogarassy, E., Muller, J. C., Hodeau, M., Wattiaux, A., Siffert, P. (1981) Laser‐induced diffusion by irradiation of silicon dipped into an organic solution of the dopant. Applied Physics Letters, 38 (9). 715-717 doi:10.1063/1.92490
 
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