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Foulon, F., Slaoui, A., Fogarassy, E., Stuck, R., Fuchs, C., Siffert, P. (1989) Optimazation of the parameters involved in the photochemical doping of Si with a pulsed ArF excimer laser. Applied Surface Science, 36. 384-393 doi:10.1016/0169-4332(89)90933-1

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Reference TypeJournal (article/letter/editorial)
TitleOptimazation of the parameters involved in the photochemical doping of Si with a pulsed ArF excimer laser
JournalApplied Surface Science
AuthorsFoulon, F.Author
Slaoui, A.Author
Fogarassy, E.Author
Stuck, R.Author
Fuchs, C.Author
Siffert, P.Author
Year1989 (January)Volume36
PublisherElsevier BV
DOIdoi:10.1016/0169-4332(89)90933-1Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID9894623Long-form Identifiermindat:1:5:9894623:5
GUID0
Full ReferenceFoulon, F., Slaoui, A., Fogarassy, E., Stuck, R., Fuchs, C., Siffert, P. (1989) Optimazation of the parameters involved in the photochemical doping of Si with a pulsed ArF excimer laser. Applied Surface Science, 36. 384-393 doi:10.1016/0169-4332(89)90933-1
Plain TextFoulon, F., Slaoui, A., Fogarassy, E., Stuck, R., Fuchs, C., Siffert, P. (1989) Optimazation of the parameters involved in the photochemical doping of Si with a pulsed ArF excimer laser. Applied Surface Science, 36. 384-393 doi:10.1016/0169-4332(89)90933-1
In(n.d.) Applied Surface Science Vol. 36. Elsevier BV

See Also

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Foulon, F., Slaoui, A., Siffert, P. (1989) ArF excimer laser doping of boron into silicon. Applied Surface Science, 43. 333-339 doi:10.1016/0169-4332(89)90235-3
Fogarassy, E., Fuchs, C., De Unamuno, S., Siffert, P. (1989) Excimer laser induced melting of heavily doped silicon: A contribution to the optimization of the laser doping process. Applied Surface Science, 43. 316-320 doi:10.1016/0169-4332(89)90232-8
Fogarassy, E., Pattyn, H., Elliq, M., Slaoui, A., Prevot, B., Stuck, R., de Unamuno, S., Mathé, E.L. (1993) Pulsed laser crystallization and doping for the fabrication of high-quality poly-Si TFTs. Applied Surface Science, 69. 231-241 doi:10.1016/0169-4332(93)90510-i
Fogarassy, E., Slaoui, A., Fuchs, C., Stoquert, J.P. (1992) Synthesis of SiO2 thin films by reactive excimer laser ablation. Applied Surface Science, 54. 180-186 doi:10.1016/0169-4332(92)90041-u
de Unamuno, S., Fogarassy, E. (1989) A thermal description of the melting of c- and a-silicon under pulsed excimer lasers. Applied Surface Science, 36. 1-11 doi:10.1016/0169-4332(89)90894-5
Fogarassy, E., Slaoui, A., Fuchs, C., Stoquert, J.P. (1990) Deposition of SiO2 by reactive excimer laser ablation from a SiO target. Applied Surface Science, 46. 195-199 doi:10.1016/0169-4332(90)90141-l
Boch, E., Fuchs, C., Fogarassy, E., Siffert, P. (1989) Influence of dilution in nitrogen on the photodissociation processes of silane and disilane at 193 nm. Applied Surface Science, 43. 17-22 doi:10.1016/0169-4332(89)90184-0
Antoni, F., Fogarassy, E., Fuchs, C., PrĂ©vot, B., Stoquert, J.P. (1995) Si1−xGex thin films deposited by the pulsed excimer laser ablation technique. Applied Surface Science, 86. 175-179 doi:10.1016/0169-4332(94)00374-2
Slaoui, A., Foulon, F., Siffert, P. (1990) Excimer laser induced doping of phosphorus into silicon. Journal of Applied Physics, 67 (10). 6197-6201 doi:10.1063/1.345186
Slaoui, A., Fogarassy, E., Fuchs, C., Siffert, P. (1992) Properties of silicon dioxide films prepared by pulsed‐laser ablation. Journal of Applied Physics, 71 (2). 590-596 doi:10.1063/1.350411
Fogarassy, E., White, C. W., Slaoui, A., Fuchs, C., Siffert, P., Pennycook, S. J. (1988) Excimer laser induced oxidation of ion‐implanted silicon. Applied Physics Letters, 53 (18). 1720-1722 doi:10.1063/1.99805
 
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