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Slaoui, A., Fogarassy, E., White, C. W., Siffert, P. (1988) Infrared characterization of UV laser‐induced silicon oxide films. Applied Physics Letters, 53 (19). 1832-1834 doi:10.1063/1.100482

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Reference TypeJournal (article/letter/editorial)
TitleInfrared characterization of UV laser‐induced silicon oxide films
JournalApplied Physics Letters
AuthorsSlaoui, A.Author
Fogarassy, E.Author
White, C. W.Author
Siffert, P.Author
Year1988 (November 7)Volume53
Issue19
PublisherAIP Publishing
DOIdoi:10.1063/1.100482Search in ResearchGate
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Mindat Ref. ID8484685Long-form Identifiermindat:1:5:8484685:9
GUID0
Full ReferenceSlaoui, A., Fogarassy, E., White, C. W., Siffert, P. (1988) Infrared characterization of UV laser‐induced silicon oxide films. Applied Physics Letters, 53 (19). 1832-1834 doi:10.1063/1.100482
Plain TextSlaoui, A., Fogarassy, E., White, C. W., Siffert, P. (1988) Infrared characterization of UV laser‐induced silicon oxide films. Applied Physics Letters, 53 (19). 1832-1834 doi:10.1063/1.100482
In(1988, November) Applied Physics Letters Vol. 53 (19) AIP Publishing

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Fogarassy, E., White, C. W., Slaoui, A., Fuchs, C., Siffert, P., Pennycook, S. J. (1988) Excimer laser induced oxidation of ion‐implanted silicon. Applied Physics Letters, 53 (18). 1720-1722 doi:10.1063/1.99805
Slaoui, A., Fogarassy, E., Fuchs, C., Siffert, P. (1992) Properties of silicon dioxide films prepared by pulsed‐laser ablation. Journal of Applied Physics, 71 (2). 590-596 doi:10.1063/1.350411
Fogarassy, E., Fuchs, C., Slaoui, A., de Unamuno, S., Stoquert, J. P., Marine, W., Lang, B. (1994) Low‐temperature synthesis of silicon oxide, oxynitride, and nitride films by pulsed excimer laser ablation. Journal of Applied Physics, 76 (5). 2612-2620 doi:10.1063/1.357557
Slaoui, A., Foulon, F., Siffert, P. (1990) Excimer laser induced doping of phosphorus into silicon. Journal of Applied Physics, 67 (10). 6197-6201 doi:10.1063/1.345186
Stuck, R., Fogarassy, E., Muller, J. C., Hodeau, M., Wattiaux, A., Siffert, P. (1981) Laser‐induced diffusion by irradiation of silicon dipped into an organic solution of the dopant. Applied Physics Letters, 38 (9). 715-717 doi:10.1063/1.92490
Fogarassy, E. P., Lowndes, D. H., Narayan, J., White, C. W. (1985) UV laser incorporation of dopants into silicon: Comparison of two processes. Journal of Applied Physics, 58 (6). 2167-2173 doi:10.1063/1.335982
Fogarassy, E., Stuck, R., Toulemonde, M., Bruyere, J. C., Siffert, P. (1982) Pulsed laser annealing of rf sputtered amorphous Si‐H films doped with arsenic. Journal of Applied Physics, 53 (4). 3261-3266 doi:10.1063/1.331029
Fogarassy, E., Slaoui, A., Fuchs, C., Regolini, J. L. (1987) Rapid thermal oxidation of silicon monoxide. Applied Physics Letters, 51 (5). 337-339 doi:10.1063/1.98433
Fogarassy, E., Stuck, R., Grob, J. J., Siffert, P. (1981) Silicon solar cells realized by laser induced diffusion of vacuum‐deposited dopants. Journal of Applied Physics, 52 (2). 1076-1082 doi:10.1063/1.328806
Fogarassy, E., Stuck, R., Toulemonde, M., Salles, D., Siffert, P. (1983) A model for laser induced diffusion. Journal of Applied Physics, 54 (9). 5059-5063 doi:10.1063/1.332778
Hartiti, B., Slaoui, A., Muller, J. C., Siffert, P. (1989) Electrically active defects in silicon after excimer laser processing. Journal of Applied Physics, 66 (8). 3934-3937 doi:10.1063/1.344021
 
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