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Thuong‐Quat, Vu, Eichhammer, W., Siffert, P. (1989) Inhomogeneous defect activation by rapid thermal processes in silicon. Applied Physics Letters, 54 (13). 1235-1237 doi:10.1063/1.100726

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Reference TypeJournal (article/letter/editorial)
TitleInhomogeneous defect activation by rapid thermal processes in silicon
JournalApplied Physics Letters
AuthorsThuong‐Quat, VuAuthor
Eichhammer, W.Author
Siffert, P.Author
Year1989 (March 27)Volume54
Issue13
PublisherAIP Publishing
DOIdoi:10.1063/1.100726Search in ResearchGate
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Mindat Ref. ID8486098Long-form Identifiermindat:1:5:8486098:3
GUID0
Full ReferenceThuong‐Quat, Vu, Eichhammer, W., Siffert, P. (1989) Inhomogeneous defect activation by rapid thermal processes in silicon. Applied Physics Letters, 54 (13). 1235-1237 doi:10.1063/1.100726
Plain TextThuong‐Quat, Vu, Eichhammer, W., Siffert, P. (1989) Inhomogeneous defect activation by rapid thermal processes in silicon. Applied Physics Letters, 54 (13). 1235-1237 doi:10.1063/1.100726
In(1989, March) Applied Physics Letters Vol. 54 (13) AIP Publishing

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Quat, Vu Thuong, Eichhammer, W., Siffert, P. (1988) Electron diffusion length in rapid thermal processedp‐type silicon. Applied Physics Letters, 53 (20). 1928-1930 doi:10.1063/1.100348
Hartiti, B., Vu‐Thuong‐Quat, , Eichhammer, W., Muller, J.‐C., Siffert, P. (1989) Gettering of gold by rapid thermal processing. Applied Physics Letters, 55 (9). 873-875 doi:10.1063/1.101626
Eichhammer, W., Vu‐Thuong‐Quat, , Siffert, P. (1989) On the origin of rapid thermal process induced recombination centers in silicon. Journal of Applied Physics, 66 (8). 3857-3865 doi:10.1063/1.344050
Quat, Vu Thuong, Nicolet, Marc‐A. (1972) Electron Trapping in Neutron‐Irradiated Silicon Studied by Space‐Charge‐Limited Current. Journal of Applied Physics, 43 (6). 2755-2762 doi:10.1063/1.1661589
Adekoya, W. O., Muller, J. C., Siffert, P. (1986) Annealing kinetics during rapid and classical thermal processing of a laser induced defect inn‐type silicon. Applied Physics Letters, 49 (21). 1429-1431 doi:10.1063/1.97344
Hartiti, B., Slaoui, A., Muller, J. C., Siffert, P. (1993) Large diffusion length enhancement in silicon by rapid thermal codiffusion of phosphorus and aluminum. Applied Physics Letters, 63 (9). 1249-1251 doi:10.1063/1.109786
Adekoya, W. O., Hage‐Ali, M., Muller, J. C., Siffert, P. (1988) Dose effects during solid phase epitaxial regrowth of boron‐implanted, germanium‐amorphized silicon induced by rapid thermal annealing. Applied Physics Letters, 53 (6). 511-513 doi:10.1063/1.99882
Adekoya, W. O., Hage‐Ali, M., Muller, J. C., Siffert, P. (1988) On the kinetics of solid phase regrowth and dopant activation during rapid thermal annealing of implantation amorphized silicon. Journal of Applied Physics, 64 (2). 666-676 doi:10.1063/1.341959
Adekoya, W. O., Ali, M. Hage, Muller, J. C., Siffert, P. (1987) Direct evidence of recrystallization rate enhancement during rapid thermal annealing of phosphorus amorphized silicon layers. Applied Physics Letters, 50 (24). 1736-1738 doi:10.1063/1.97732
Lee, S. K., Ku, Y. H., Kwong, D. L. (1989) Silicon epitaxial growth by rapid thermal processing chemical vapor deposition. Applied Physics Letters, 54 (18). 1775-1777 doi:10.1063/1.101288
Kobayashi, Naoki (1989) Single quantum well photoluminescence in ZnSe/GaAs/AlGaAs grown by migration‐enhanced epitaxy. Applied Physics Letters, 55 (12). 1235-1237 doi:10.1063/1.101665
 
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