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Vandenberg, J. M., Panish, M. B., Temkin, H., Hamm, R. A. (1988) Intrinsic strain at lattice‐matched Ga0.47In0.53As/InP interfaces as studied with high‐resolution x‐ray diffraction. Applied Physics Letters, 53 (20). 1920-1922 doi:10.1063/1.100345

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Reference TypeJournal (article/letter/editorial)
TitleIntrinsic strain at lattice‐matched Ga0.47In0.53As/InP interfaces as studied with high‐resolution x‐ray diffraction
JournalApplied Physics Letters
AuthorsVandenberg, J. M.Author
Panish, M. B.Author
Temkin, H.Author
Hamm, R. A.Author
Year1988 (November 14)Volume53
Issue20
PublisherAIP Publishing
DOIdoi:10.1063/1.100345Search in ResearchGate
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Mindat Ref. ID8484821Long-form Identifiermindat:1:5:8484821:9
GUID0
Full ReferenceVandenberg, J. M., Panish, M. B., Temkin, H., Hamm, R. A. (1988) Intrinsic strain at lattice‐matched Ga0.47In0.53As/InP interfaces as studied with high‐resolution x‐ray diffraction. Applied Physics Letters, 53 (20). 1920-1922 doi:10.1063/1.100345
Plain TextVandenberg, J. M., Panish, M. B., Temkin, H., Hamm, R. A. (1988) Intrinsic strain at lattice‐matched Ga0.47In0.53As/InP interfaces as studied with high‐resolution x‐ray diffraction. Applied Physics Letters, 53 (20). 1920-1922 doi:10.1063/1.100345
In(1988, November) Applied Physics Letters Vol. 53 (20) AIP Publishing

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Vandenberg, J. M., Panish, M. B., Hamm, R. A., Temkin, H. (1990) Modification of intrinsic strain at lattice‐matched GaInAs/InP interfaces. Applied Physics Letters, 56 (10). 910-912 doi:10.1063/1.102625
Vandenberg, J. M., Hamm, R. A., Panish, M. B., Temkin, H. (1987) High‐resolution x‐ray diffraction studies of InGaAs(P)/InP superlattices grown by gas‐source molecular‐beam epitaxy. Journal of Applied Physics, 62 (4). 1278-1283 doi:10.1063/1.339681
Vandenberg, J. M., Chu, S. N. G., Hamm, R. A., Panish, M. B., Temkin, H. (1986) High‐resolution x‐ray diffraction and transmission electron microscopy studies of InGaAs/InP superlattices grown by gas‐source molecular beam epitaxy. Applied Physics Letters, 49 (19). 1302-1304 doi:10.1063/1.97393
Vandenberg, J. M., Gershoni, D., Hamm, R. A., Panish, M. B., Temkin, H. (1989) Structural perfection of InGaAs/InP strained‐layer superlattices grown by gas source molecular‐beam epitaxy: A high‐resolution x‐ray diffraction study. Journal of Applied Physics, 66 (8). 3635-3638 doi:10.1063/1.344072
Hamm, R. A., Ritter, D., Temkin, H., Panish, M. B., Geva, M. (1991) p‐type doping of InP and Ga0.47In0.53As using diethylzinc during metalorganic molecular beam epitaxy. Applied Physics Letters, 58 (21). 2378-2380 doi:10.1063/1.104876
Temkin, H., Panish, M. B., Petroff, P. M., Hamm, R. A., Vandenberg, J. M., Sumski, S. (1985) GaInAs(P)/InP quantum well structures grown by gas source molecular beam epitaxy. Applied Physics Letters, 47 (4). 394-396 doi:10.1063/1.96178
Temkin, H., Gershoni, D. G., Chu, S. N. G., Vandenberg, J. M., Hamm, R. A., Panish, M. B. (1989) Critical layer thickness in strained Ga1−xInxAs/InP quantum wells. Applied Physics Letters, 55 (16). 1668-1670 doi:10.1063/1.102231
Vandenberg, J. M., Hamm, R. A., Macrander, A. T., Panish, M. B., Temkin, H. (1986) Structural characterization of GaInAs(P)/InP quantum well structures grown by gas source molecular beam epitaxy. Applied Physics Letters, 48 (17). 1153-1155 doi:10.1063/1.96454
Vandenberg, J. M., Macrander, A. T., Hamm, R. A., Panish, M. B. (1991) Evidence for intrinsic interfacial strain in lattice-matchedInxGa1−xAs/InP heterostructures. Physical Review B, 44 (8) 3991-3994 doi:10.1103/physrevb.44.3991
Gershoni, D., Temkin, H., Panish, M. B. (1988) Strained‐layer Ga1−xInxAs/InP avalanche photodetectors. Applied Physics Letters, 53 (14). 1294-1296 doi:10.1063/1.100001
Vandenberg, J. M., Bean, J. C., Hamm, R. A., Hull, R. (1988) Kinematical simulation of high‐resolution x‐ray diffraction curves of GexSi1−x/Si strained‐layer superlattices: A structural assessment. Applied Physics Letters, 52 (14). 1152-1154 doi:10.1063/1.99189
 
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