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Gershoni, D., Temkin, H., Panish, M. B. (1988) Strained‐layer Ga1−xInxAs/InP avalanche photodetectors. Applied Physics Letters, 53 (14). 1294-1296 doi:10.1063/1.100001

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Reference TypeJournal (article/letter/editorial)
TitleStrained‐layer Ga1−xInxAs/InP avalanche photodetectors
JournalApplied Physics Letters
AuthorsGershoni, D.Author
Temkin, H.Author
Panish, M. B.Author
Year1988 (October 3)Volume53
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.100001Search in ResearchGate
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Mindat Ref. ID8484282Long-form Identifiermindat:1:5:8484282:6
GUID0
Full ReferenceGershoni, D., Temkin, H., Panish, M. B. (1988) Strained‐layer Ga1−xInxAs/InP avalanche photodetectors. Applied Physics Letters, 53 (14). 1294-1296 doi:10.1063/1.100001
Plain TextGershoni, D., Temkin, H., Panish, M. B. (1988) Strained‐layer Ga1−xInxAs/InP avalanche photodetectors. Applied Physics Letters, 53 (14). 1294-1296 doi:10.1063/1.100001
In(1988, October) Applied Physics Letters Vol. 53 (14) AIP Publishing

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Temkin, H., Gershoni, D. G., Chu, S. N. G., Vandenberg, J. M., Hamm, R. A., Panish, M. B. (1989) Critical layer thickness in strained Ga1−xInxAs/InP quantum wells. Applied Physics Letters, 55 (16). 1668-1670 doi:10.1063/1.102231
Temkin, H., Panish, M. B., Chu, S. N. G. (1986) InGaAs/InP superlattice avalanche photodetectors grown by gas source molecular beam epitaxy. Applied Physics Letters, 49 (14). 859-861 doi:10.1063/1.97517
Temkin, H., Gershoni, D., Panish, M. B. (1987) InGaAsP/InP quantum well modulators grown by gas source molecular beam epitaxy. Applied Physics Letters, 50 (25). 1776-1778 doi:10.1063/1.97743
Gershoni, D., Vandenberg, J. M., Hamm, R. A., Temkin, H., Panish, M. B. (1987) Electronic energy levels inInxGa1−xAs/InP strained-layer superlattices. Physical Review B, 36 (2) 1320-1323 doi:10.1103/physrevb.36.1320
Gershoni, D., Temkin, H., Dolan, G. J., Dunsmuir, J., Chu, S. N. G., Panish, M. B. (1988) Effects of two‐dimensional confinement on the optical properties of InGaAs/InP quantum wire structures. Applied Physics Letters, 53 (11). 995-997 doi:10.1063/1.100052
Vandenberg, J. M., Gershoni, D., Hamm, R. A., Panish, M. B., Temkin, H. (1989) Structural perfection of InGaAs/InP strained‐layer superlattices grown by gas source molecular‐beam epitaxy: A high‐resolution x‐ray diffraction study. Journal of Applied Physics, 66 (8). 3635-3638 doi:10.1063/1.344072
Gershoni, D., Hamm, R. A., Panish, M. B., Humphrey, D. A. (1990) Blue Stark shift in modulation strained InGaAs/InP quantum wells. Applied Physics Letters, 56 (14). 1347-1349 doi:10.1063/1.102510
Gershoni, D., Temkin, H., Panish, M. B., Hamm, R. A. (1989) Excitonic transitions in strained-layerInxGa1−xAs/InP quantum wells. Physical Review B, 39 (8) 5531-5534 doi:10.1103/physrevb.39.5531
Gershoni, D., Temkin, H., Vandenberg, J. M., Chu, S. N. G., Hamm, R. A., Panish, M. B. (1988) Type-I to type-II superlattice transition in strained layers ofInxGa1−xAs grown on InP. Physical Review Letters, 60 (5). 448-451 doi:10.1103/physrevlett.60.448
Vandenberg, J. M., Panish, M. B., Temkin, H., Hamm, R. A. (1988) Intrinsic strain at lattice‐matched Ga0.47In0.53As/InP interfaces as studied with high‐resolution x‐ray diffraction. Applied Physics Letters, 53 (20). 1920-1922 doi:10.1063/1.100345
Gershoni, D., Temkin, H., Panish, M. B., Hamm, R. A. (1989) Erratum: Excitonic transitions in strained-layerInxGa1−xAs/InPquantum wells. Physical Review B, 40 (2) 1329 doi:10.1103/physrevb.40.1329.3
 
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