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Ishikawa, Tomonori, Maeda, Takeshi, Kondo, Kazuo (1988) Selectively Se‐doped AlGaAs/GaAs heterostructures with reducedDXcenter concentrations grown by molecular beam epitaxy. Applied Physics Letters, 53 (20). 1926-1927 doi:10.1063/1.100347

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Reference TypeJournal (article/letter/editorial)
TitleSelectively Se‐doped AlGaAs/GaAs heterostructures with reducedDXcenter concentrations grown by molecular beam epitaxy
JournalApplied Physics Letters
AuthorsIshikawa, TomonoriAuthor
Maeda, TakeshiAuthor
Kondo, KazuoAuthor
Year1988 (November 14)Volume53
Issue20
PublisherAIP Publishing
DOIdoi:10.1063/1.100347Search in ResearchGate
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Mindat Ref. ID8484825Long-form Identifiermindat:1:5:8484825:5
GUID0
Full ReferenceIshikawa, Tomonori, Maeda, Takeshi, Kondo, Kazuo (1988) Selectively Se‐doped AlGaAs/GaAs heterostructures with reducedDXcenter concentrations grown by molecular beam epitaxy. Applied Physics Letters, 53 (20). 1926-1927 doi:10.1063/1.100347
Plain TextIshikawa, Tomonori, Maeda, Takeshi, Kondo, Kazuo (1988) Selectively Se‐doped AlGaAs/GaAs heterostructures with reducedDXcenter concentrations grown by molecular beam epitaxy. Applied Physics Letters, 53 (20). 1926-1927 doi:10.1063/1.100347
In(1988, November) Applied Physics Letters Vol. 53 (20) AIP Publishing

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Ishikawa, Tomonori, Maeda, Takeshi, Kondo, Kazuo (1990) Selectively Se‐doped AlGaAs/GaAs heterostructures with reducedDX‐center concentrations grown by molecular‐beam epitaxy. Journal of Applied Physics, 68 (7). 3343-3347 doi:10.1063/1.346387
Saito, Junji, Nanbu, Kazuo, Ishikawa, Tomonori, Kondo, Kazuo (1988) GaAs surface cleaning by thermal oxidation and sublimation in molecular‐beam epitaxy. Journal of Applied Physics, 63 (2). 404-409 doi:10.1063/1.340253
Ishikawa, Tomonori, Ogasawara, Kazuto, Nakamura, Tomohiro, Kuroda, Shigeru, Kondo, Kazuo (1987) Improvement of two‐dimensional electron gas concentration in selectively doped GaAs/N‐AlGaAs heterostructures by atomic planar doping. Journal of Applied Physics, 61 (5). 1937-1940 doi:10.1063/1.338041
Ishikawa, Tomonori, Kondo, Kazuo, Hiyamizu, Satoshi, Shibatomi, Akihiro (1985) Influence of MBE Growth Conditions on Persistent Photoconductivily Effects in N-AlGaAs and Selectively Doped GaAs/AlGaAs Heterostructures. Japanese Journal of Applied Physics, 24. doi:10.1143/jjap.24.l408
Hiyamizu, Satoshi, Saito, Junji, Nanbu, Kazuo, Ishikawa, Tomonori (1983) Improved Electron Mobility Higher than 106cm2/Vs in Selectively Doped GaAs/N-AlGaAs Heterostructures Grown by MBE. Japanese Journal of Applied Physics, 22. doi:10.1143/jjap.22.l609
Nakamura, Tomohiro, Nanbu, Kazuo, Ishikawa, Tomonori, Kondo, Kazuo (1988) Influence of surface defects on the characteristics of high electron mobility transistors grown by molecular‐beam epitaxy. Journal of Applied Physics, 64 (4). 2164-2167 doi:10.1063/1.341730
Vina, L., Wang, W. I. (1986) AlGaAs/GaAs(111) heterostructures grown by molecular beam epitaxy. Applied Physics Letters, 48 (1). 36-37 doi:10.1063/1.96753
Ploog, Klaus, Fischer, Albrecht (1986) High‐throughput high‐yield fabrication of selectively doped AlxGa1−xAs/GaAs heterostructures by molecular beam epitaxy. Applied Physics Letters, 48 (20). 1392-1394 doi:10.1063/1.96919
Sasa, Shigehiko, Saito, Junji, Nanbu, Kazuo, Ishikawa, Tomonori, Hiyamizu, Satoshi, Inoue, Masataka (1985) Electronic States in Selectively Si-Doped N-AlGaAs/GaAs/N-AlGaAs Single Quantum Well Structures Grown by MBE. Japanese Journal of Applied Physics, 24. doi:10.1143/jjap.24.l281
Hwang, J. C. M., Kastalsky, A., Störmer, H. L., Keramidas, V. G. (1984) Transport properties of selectively doped GaAs‐(AlGa)As heterostructures grown by molecular beam epitaxy. Applied Physics Letters, 44 (8). 802-804 doi:10.1063/1.94891
Saito, Junji, Nanbu, Kazuo, Ishikawa, Tomonori, Kondo, Kazuo (1988) GaAs Surface Cleaning with HCl Gas and Hydrogen Mixture for Molecular-Beam-Epitaxial Growth. Japanese Journal of Applied Physics, 27. doi:10.1143/jjap.27.l702
 
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